266results about How to "Simple preparation equipment" patented technology

The invention belongs to the technological field of coal chemical processing and discloses a heat dissolving and catalyzing method using brown coal to prepare liquid fuel. The method comprises the following steps: 1) the brown coal is smashed and dried to prepare pulverized coal; 2) the pulverized coal, solvent and catalyst are stirred and mixed well to prepare coal slurry; wherein, the weight percent of the pulverized coal is 30 percent to 40 percent; the weight percent of the solvent is 60 percent to 70 percent; the quantity of the added catalyst is 0.5 percent to 1 percent of the weight of the pulverized coal; 3) the coal slurry is dissolved by heat and catalyzed to prepare heat dissolved and liquefied products; wherein, the temperature is 390 DEG C to 450 DEG C; the pressure is 5.0MPa to 9.0MPa; the reaction time is 30 minutes to 60 minutes; 4) the heat dissolved and liquefied products are separated to form gas-phase, liquid-phase and solid-phase products; 5) the liquid products are extracted and processed to form liquid fuel. The invention also discloses catalyst and solvent used in the method. The operation condition of the method of the invention is mild; the conversion ratio of the organic substances in the brown coal can achieve a higher level; after being processed, the liquid fuel product can be used for preparing engine fuel suiting national standards; and the preparation equipment is simple; the investment is small; the cost is low; and the invention is a coal liquefaction method suiting the national conditions of China.

An excellent silicon-based thin-film photoelectric conversion device is manufactured simply and efficiently at a low cost. Specifically, a method of manufacturing the silicon-based thin-film photoelectric conversion device including a p-type semiconductor layer, an i-type microcrystalline silicon-based photoelectric conversion layer and an n-type semiconductor layer deposited by plasma CVD includes the steps of: successively depositing the p-type semiconductor layer, the i-type microcrystalline silicon-based photoelectric conversion layer and the n-type semiconductor layer on a substrate within the same plasma CVD film deposition chamber; transferring the substrate out of the film deposition chamber; and subsequently to the step of depositing the p-type semiconductor layer, the i-type microcrystalline silicon-based photoelectric conversion layer and the n-type semiconductor layer, eliminating influences of remaining n-type impurities on a cathode and / or within the film deposition chamber.