90 results about "Ti doping" patented technology

The projection lithographic method for producing integrated circuits and forming patterns with extremely small feature dimensions includes an illumination sub-system (36) for producing and directing an extreme ultraviolet soft x-ray radiation λ from an extreme ultraviolet soft x-ray source (38); a mask stage (22) illuminated by the extreme ultraviolet soft x-ray radiation λ produced by illumination stage and the mask stage (22) includes a pattern when illuminated by radiation λ. A protection sub-system includes reflective multilayer coated Ti doped high purity SiO2 glass defect free surface (32) and printed media subject wafer which has a radiation sensitive surface.

The present invention relates to reflective masks and their use for reflecting extreme ultraviolet soft x-ray photons to enable the use of extreme ultraviolet soft x-ray radiation projection lithographic methods and systems for producing integrated circuits and forming patterns with extremely small feature dimensions. The projection lithographic method includes providing an illumination sub-system for producing and directing an extreme ultraviolet soft. x-ray radiation lambd from an extreme ultraviolet soft x-ray source; providing a mask sub-system illuminated by the extreme ultraviolet soft x-ray radiation lambd produced by the illumination sub-system and providing the mask sub-system includes providing a patterned reflective mask for forming a projected mask pattern when illuminated by radiation lambd. Providing the patterned reflective mask includes providing a Ti doped high purity SiO2 glass wafer with a patterned absorbing overlay overlaying the reflective multilayer coated Ti doped high purity SiO2 glass defect free wafer surface that has an Ra roughness <=0.15 nm. The method includes providing a projection sub-system and a print media subject wafer which has a radiation sensitive wafer surface wherein the projection sub-system projects the projected mask pattern from the patterned reflective mask onto the radiation sensitive wafer surface.

The invention discloses a lithium ion battery and a multi-element positive material thereof as well as a preparation method for the multi-element positive material. The chemical general formula of the multi-element positive material is LixNiaCobMncNyO2, wherein N is one of Ti, Mg and Al; x is more than or equal to 1.0 and less than or equal to 1.15; a is more than 0 and less than 1; b is more than 0 and less than 1; c is more than 0 and less than 1; y is more than or equal to 0.003 and less than or equal to 0.07; the sum of a, b, c and y is equal to 1. The multi-element positive material with a layered structure comprises a kernel pure phase layer containing lithium cobalt nickel manganese oxide, a surface doped layer containing a doped element Ti, an oxide surface cladding layer containing a cladding element Al and a shallow surface doped transitional layer which is positioned between the surface doped layer and the surface cladding layer and contains a doped element Mg. The preparation method of the multi-element positive material comprises the steps of synthesizing a multi-element precursor of which a body phase contains nickel, cobalt and manganese, then performing Ti doping and lithium treatment on the surface of a precursor liquid phase, and finally, doping Mg on the surface by a pyrogenic process and performing Al2O3 cladding treatment to obtain the composite modified multi-element lithium ion positive material.