4874 results about "Lamellar structure" patented technology

A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.

A laminated negative pressure wound dressing system and method is described. The wound dressing is disposed in the wound in layers including at least one bioabsorbable layer that contacts the wound bed, a bioabsorbable fluid communicating layer, an atmospheric barrier layer, and a tube for applying a negative pressure to the wound bed. Ingrowth of granulation tissue into the bioabsorbable wound bed layer does not need to be inhibited as the bioabsorbable material need not be removed during dressing changes. A kit containing the components of the wound dressing system is also disclosed as well as a method for applying the dressing.

A method for manufacturing optoelectronic devices is disclosed. A layered structure may be formed with a plurality of layers including a bottom electrode layer, a top electrode layer, and one or more active layers between the top and bottom electrode layers. The layered structure is divided into one or more separate device module sections by cutting through one or more of the layers of the layered structure. At least one of the layers is an unpatterned layer at the time of cutting. Each of the resulting device module sections generally includes a portion of the active layer disposed between portions of the top and bottom electrode layers. An edge of a device section may optionally be protected against undesired electrical contact between two or more of the bottom electrode, top electrode and active layer portions. Two or more device module sections may be assembled into a device and connected in series by electrically connecting the bottom electrode layer portion of one device section to the top electrode layer portion of another device module section.

A system provides an environmental barrier also useful for providing a circuit, for example, one having a thin-film battery such as one that includes lithium or lithium compounds connected to an electronic circuit. An environmental barrier is deposited as alternating layers, at least one of the layers providing a smoothing, planarizing, and / or leveling physical-configuration function, and at least one other layer providing a diffusion-barrier function. The layer providing the physical-configuration function may include a photoresist, a photodefinable, an energy-definable, and / or a maskable layer. The physical-configuration layer may also be a dielectric. A layered structure, including a plurality of pairs of layers, each pair including a physical configuration layer and a barrier layer with low gas-transmission rates, may be used in reducing gas transmission rate to beyond currently detectable levels.

The invention provides a preparation method of graphene, and particularly relates to a method for preparing biomass graphene employing cellulose as a raw material. The specific preparation method comprises the following steps: 1, preparing a catalyst solution; 2, carrying out ionic coordination and high-temperature deoxidization on cellulose and a catalyst, so as to obtain a precursor; 3, carrying out thermal treatment; 4, carrying out acid treatment, and drying to obtain the graphene, wherein the prepared graphene is uniform in morphology, has a single-layer or multi-layer two-dimensional layered structure; the dimension is 0.5-2 microns; and the electrical conductivity is 25,000-45,000S / m. The preparation method is simple in preparation technology, low in cost, high in yield, high in production safety, and controllable in product dimension and physical property; industrialized production can be realized; the graphene prepared by the method can be applied to electrode materials of super capacitors and lithium ion batteries, and can also be added to resin and rubber as an additive; and the physical property of the material can be improved.

The invention relates to a sputtering target which has a fine uniform equiaxed grain structure of less than 44 microns, no preferred texture orientation as measured by electron back scattered diffraction (“EBSD”) and that displays no grain size banding or texture banding throughout the body of the target. The invention relates a sputtering target with a lenticular or flattened grain structure, no preferred texture orientation as measured by EBSD and that displays no grain size or texture banding throughout the body of the target and where the target has a layered structure incorporating a layer of the sputtering material and at least one additional layer at the backing plate interface, said layer has a coefficient of thermal expansion (“CTE”) value between the CTE of the backing plate and the CTE of the layer of sputtering material. The invention also relates to thin films and their use of using the sputtering target and other applications, such as coatings, solar devices, semiconductor devices etc. The invention further relates to a process to repair or rejuvenate a sputtering target.

The present invention comprises a method for forming a semiconducting device including the steps of providing a layered structure including a substrate, a low diffusivity layer of a first-conductivity dopant; and a channel layer; forming a gate stack atop a protected surface of the channel layer; etching the layered structure selective to the gate stack to expose a surface of the substrate, where a remaining portion of the low diffusivity layer provides a retrograded island substantially aligned to the gate stack having a first dopant concentration to reduce short-channel effects without increasing leakage; growing a Si-containing material atop the recessed surface of the substrate; and doping the Si-containing material with a second-conductivity dopant at a second dopant concentration. The low diffusivity layer may be Si1-x-yGexZy, where Z can be carbon (C), xenon (Xe), germanium (Ge), krypton (Kr), argon (Ar), nitrogen (N), or combinations thereof.

A structure and method of forming an abrupt doping profile is described incorporating a substrate, a first epitaxial layer of Ge less than the critical thickness having a P or As concentration greater than 5×1019 atoms / cc, and a second epitaxial layer having a change in concentration in its first 40 from the first layer of greater than 1×1019 P atoms / cc. Alternatively, a layer of SiGe having a Ge content greater than 0.5 may be selectively amorphized and recrystalized with respect to other layers in a layered structure. The invention overcomes the problem of forming abrupt phosphorus profiles in Si and SiGe layers or films in semiconductor structures such as CMOS, MODFET's, and HBT's.

As an alternative technique to lead-acid batteries, the present invention provides an inexpensive 2 V non-aqueous electrolyte secondary battery having excellent cycle life at a high rate by preventing volume change during charge and discharge. The non-aqueous electrolyte secondary battery uses: a positive electrode active material having a layered structure, being represented by chemical formula Li1±α[Me]O2, where 0≦α<0.2, and Me is a transition metal including Ni and at least one selected from the group consisting of Mn, Fe, Co, Ti and Cu, and including elemental nickel and elemental cobalt in substantially the same ratio; and a negative electrode active material including Li4Ti5O12(Li[Li1 / 3Ti5 / 3]O4).

The invention relates to a method of manufacturing layer-like structures in which a material layer having hollow cavities, preferably a porous material layer, is produced on or out of a substrate consisting, for example, of monocrystalline p-type or n-type Si and in which the layer-like structure, or a part of it, is subsequently provided on the cavity exhibiting or porous material layer. The layer-like structure, or a part of it, is subsequently separated from the substrate using the layer having the hollow cavities, or porous layer, as a point of desired separation, for example through the production of a mechanical strain within or at a boundary surface of the cavity exhibiting or porous layer. The method is characterized in that the surface of the substrate is structured prior to the production of the porous layer, or in that the surface of the porous layer is structured.

An improved acoustical damping wall (ceiling or floor) or door material comprises a laminar structure having as an integral part thereof one or more layers of viscoelastic material which also functions as a glue and one or more constraining layers, such as metal, cellulose, wood, or petroleum-based products such as plastic, vinyl, plastic or rubber. In one embodiment, standard wallboard, typically gypsum, comprises the external surfaces of the laminar structure; and one or more constraining layers are fabricated between the gypsum exterior. The resulting structure improves the attenuation of sound transmitted through the structure.

The invention relates to a process for the production of a layer structure of a nitride semiconductor component on a silicon surface, comprising the steps:provision of a substrate that has a silicon surface;deposition of an aluminium-containing nitride nucleation layer on the silicon surface of the substrate;optional: deposition of an aluminium-containing nitride buffer layer on the nitride nucleation layer;deposition of a masking layer on the nitride nucleation layer or, if present, on the first nitride buffer layer;deposition of a gallium-containing first nitride semiconductor layer on the masking layer,wherein the masking layer is deposited in such a way that, in the deposition step of the first nitride semiconductor layer, initially separate crystallites grow that coalesce above a coalescence layer thickness and occupy an average surface area of at least 0.16 μm2 in a layer plane of the coalesced nitride semiconductor layer that is perpendicular to the growth direction.

The invention relates to a nickel cobalt manganese lithium oxide material used for an anode of a li-ion battery and a preparation method. The invention belongs to the li-ion battery technical field. The nickel cobalt manganese lithium oxide material used for the anode of the li-ion battery is a li-rich laminated structure with the chemical component of Li1+zM1-x-yNixCoyO2; wherein, z is less than or equal to 0.2 and more than or equal to 0.05, x is less than or equal to 0.8 and more than 0.1, and y is less than or equal to 0.5 and more than 0.1. The preparation method of the invention is that dissoluble salt of the nickel, cobalt and manganese is taken as the raw material; ammonia or ammonium salt is taken as complexing agent; sodium hydroxide is taken as precipitator; water-dissoluble dispersant and water-dissoluble antioxidant or inert gas are added for control and protection; in a cocurrent flow type the solution is added to a reaction vessel for reaction; after alkalescence disposal, aging procedure, solid-liquid separation and washing and drying, the nickel cobalt manganese oxide is uniformly mixed with the lithium raw material; the nickel cobalt manganese lithium oxide powder is obtained by sintering the mixed powder which is divided into three temperature areas. The invention has the advantages of high specific capacity, good circulation performance, ideal crystal texture, short production period, low power loss, and being suitable for industrial production, etc.

Supplemental lithium can be used to stabilize lithium ion batteries with lithium rich metal oxides as the positive electrode active material. Dramatic improvements in the specific capacity at long cycling have been obtained. The supplemental lithium can be provided with the negative electrode, or alternatively as a sacrificial material that is subsequently driven into the negative electrode active material. The supplemental lithium can be provided to the negative electrode active material prior to assembly of the battery using electrochemical deposition. The positive electrode active materials can comprise a layered-layered structure comprising manganese as well as nickel and / or cobalt.

The nano fibre protective material is made into the form of a laminar structure, its middle layer is made of high-molecular nano fibre membrane material, the diameter of the nano fibre is 10 nano-3000 nano, and its external layer is respectively one layer or multilayer natural fibre or synthetic fibre or blended fabric on non-woven fabric, and the diameter of fibre is 1 micrometer-100 micrometers. Its preparation method includes the following steps: dissolving or dispersing one or several kinds of high-molecular materials in solvent to obtain transparent solution or mixture, dispersing additive into the above-mentioned solution or melting one or several kinds of high-molecular materials to obtain electric spinning material, then adding said electric spinning material into one or several storage tanks.

An interchangeable hearing aid control panel with at least one activation zone arranged in connection with a layered structure. The layered structure has an electrically non-conducting substrate, an electrically conducting path arranged in connection with the substrate, and an electrically conducting member, such as a conducting foil, arranged at a predetermined distance from the activation zone. The activation zone can be either in a deactuated or in an actuated state. In the actuated state the conducting member and the conducting path are electrically connected while disconnected in the deactuated state. Electrical connection to an associated hearing aid is by means of a connector, such as a plug, enabling the control panel to be easily changed. Preferably, the connector is formed by a piece of flexprint. The layered structure may comprise a second conducting path. In preferred embodiments activation zones are indicated by “poppel domes” formed by a surface layer covering the layered structure. The activation zones may form an MTO control or a volume control. To fit BTE hearing aids, the layered structure preferably has an elongated structure with a length of 1-4 cm. Other shapes can be formed to fit ITE, ITC and CIC hearing aids. In preferred embodiments, the control panel comprises one or more Silicon-based microphones protected behind a surface layer of the control panel.

Flat knitting allows production of textile structures (e.g., for use in footwear uppers) of a final desired shape such that textile cutting steps can be avoided. Flat knitted elements also can be formed directly in desired three dimensional shapes, which can help avoid the need to use additional support structures (e.g., in footwear construction). By selectively placing multiple different yarns and / or stitch patterns at multiple different locations in the overall structure during the knitting process, flat knitted products may have multiple different physical properties (e.g., different stretchability, different moisture management capabilities, etc.) at multiple different locations or zones within a single, unitary construction (e.g., different properties at different zones or locations within a single footwear structure). Additionally, flat knitting can be used to produce pockets, tunnels, or other layered structures in the final product.

The invention discloses a graphene film with ultrahigh flexibility and high thermal conductivity and a preparation method of the graphene film. The graphene film is prepared from an ultralarge uniform graphene oxide sheet through steps of solution film-formation, chemical reduction, high-temperature reduction, high-pressure compression and the like. The graphene film is formed through physical crosslinking of macroscopic multi-layer folded graphene with microscale folds, and inter-lamella slippage can be realized, so that the graphene film has ultrahigh flexibility. The graphene lamellar structure of the graphene film is perfect, the lamellas have ultralarge crystalline areas which are about 100 mu m and contain few defects, the structure is compact after high-pressure compression, and the graphene film has ultrahigh electrical conductivity and thermal conductivity. The graphene film with ultrahigh flexibility and high thermal conductivity can be bent repeatedly more than 1,200 times, the elongation at break is 12%-18%, the electrical conductivity is 8,000-10,600 S / cm, the thermal conductivity is 1,800-2,600 W / mK, and the graphene film can be used as a high-flexibility, thermal-conducting and electric-conducting device.

An (SiGe)C layer having a stoichiometric ratio of about 1:1 is locally formed on an Si layer, a large forbidden band width semiconductor device is prepared inside the layered structure thereof and an Si semiconductor integrated circuit is formed in the regions not formed with the layered structure, whereby high frequency high power operation of the device is enabled by the large forbidden band width semiconductor device and high performance is attained by hybridization of the Si integrated circuit.

Multilayer structures are electrochemically fabricated on a temporary (e.g. conductive) substrate and are thereafter bonded to a permanent (e.g. dielectric, patterned, multi-material, or otherwise functional) substrate and removed from the temporary substrate. In some embodiments, the structures are formed from top layer to bottom layer, such that the bottom layer of the structure becomes adhered to the permanent substrate, while in other embodiments the structures are formed from bottom layer to top layer and then a double substrate swap occurs. The permanent substrate may be a solid that is bonded (e.g. by an adhesive) to the layered structure or it may start out as a flowable material that is solidified adjacent to or partially surrounding a portion of the structure with bonding occurring during solidification. The multilayer structure may be released from a sacrificial material prior to attaching the permanent substrate or it may be released after attachment.

A display apparatus includes an array of fiber-type semiconductor light-emitting elements. Each of the fiber-type semiconductor light-emitting elements includes a layered structure having a first electrode layer, a second electrode layer, and a semiconductor light-emitting layer at least part of which is sandwiched by the first and second electrode layers, and a fiber for supporting the layered structure and for propagating light emitted from the light-emitting layer. The display apparatus also includes driving connectors including a switching element or a plurality of first and second conductive lines, which are electrically connected to the first and second electrode layers, respectively, for driving the plurality of the fiber-type semiconductor light-emitting elements.

The present invention provides novel, stable lipid particles having a non-lamellar structure and comprising one or more active agents or therapeutic agents, methods of making such lipid particles, and methods of delivering and / or administering such lipid particles. More particularly, the present invention provides stable nucleic acid-lipid particles (SNALP) that have a non-lamellar structure and that comprise a nucleic acid (such as one or more interfering RNA), methods of making the SNALP, and methods of delivering and / or administering the SNALP.

An improved acoustical damping wall (ceiling or floor) or door material comprises a laminar structure having as an integral part thereof one or more layers of viscoelastic material which also functions as a glue and one or more constraining layers, such as metal, ceramics, composites, cellulose, wood, or petroleum-based products such as plastic, vinyl, plastic or rubber.

Supplemental lithium can be used to stabilize lithium ion batteries with lithium rich metal oxides as the positive electrode active material. Dramatic improvements in the specific capacity at long cycling have been obtained. The supplemental lithium can be provided with the negative electrode, or alternatively as a sacrificial material that is subsequently driven into the negative electrode active material. The supplemental lithium can be provided to the negative electrode active material prior to assembly of the battery using electrochemical deposition. The positive electrode active materials can comprise a layered-layered structure comprising manganese as well as nickel and / or cobalt.

The invention discloses a lithium ion battery and a multi-element positive material thereof as well as a preparation method for the multi-element positive material. The chemical general formula of the multi-element positive material is LixNiaCobMncNyO2, wherein N is one of Ti, Mg and Al; x is more than or equal to 1.0 and less than or equal to 1.15; a is more than 0 and less than 1; b is more than 0 and less than 1; c is more than 0 and less than 1; y is more than or equal to 0.003 and less than or equal to 0.07; the sum of a, b, c and y is equal to 1. The multi-element positive material with a layered structure comprises a kernel pure phase layer containing lithium cobalt nickel manganese oxide, a surface doped layer containing a doped element Ti, an oxide surface cladding layer containing a cladding element Al and a shallow surface doped transitional layer which is positioned between the surface doped layer and the surface cladding layer and contains a doped element Mg. The preparation method of the multi-element positive material comprises the steps of synthesizing a multi-element precursor of which a body phase contains nickel, cobalt and manganese, then performing Ti doping and lithium treatment on the surface of a precursor liquid phase, and finally, doping Mg on the surface by a pyrogenic process and performing Al2O3 cladding treatment to obtain the composite modified multi-element lithium ion positive material.

The invention relates to a layer-by-layer self-assembling oxidized graphene nano-filtration membrane and a preparation method of the layer-by-layer self-assembling oxidized graphene nano-filtration membrane, which belongs to the technical field of the preparation of a nano-filtration membrane. The layer-by-layer self-assembling oxidized graphene nano-filtration membrane comprises a supporting layer and a functional layer, wherein the functional layer is in a layered structure which is different from the compact structure of the traditional nano-filtration membrane functional layer. The preparation method comprises the following steps of (I) preparing an oxidized graphene solution through a hummers method; and (II) preparing an oxidized graphne nano-filtration membrane through a layer-by-layer self-assembling method. The oxidized graphene nano-filtration membrane is prepared through the layer-by-layer self-assembling method, a water passage is formed between the oxidized graphene lamellas, the distance of the oxidized graphene layer has a good interception effect for ions, the hydrophilia can be improved through the oxygen-containing functional groups on the surface of the oxidized graphene layer, so that the membrane is good in permeability and interception property. By utilizing the layer-by-layer self-assembling method, the high requirement of the traditional nano-filtration membrane preparation process on the condition can be avoided, the process is simple, the condition is easily controlled, and the application prospect is wide.

A high-frequency micro-strip line for transmitting a high-frequency wave for a wireless LAN system has a layered structure where, on a ground layer made of a conductive material, a dielectric layer made of a dielectric material and a signal line made of a conductive material are successively laid. The high-frequency micro-strip line further includes a patch antenna comprising a dielectric plate made of a dielectric material and a patch made of a conductive material, which are successively laid into a layered structure, the patch antenna being electrically connected to the signal line. A wireless-communication RF signal transmission device capable of being applied to such a line is also provided.

A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.