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The invention relates to a silicon ingot and a preparation method thereof. The preparation method of the silicon ingot comprises the following steps: uniformly mixing dopants with coating materials and then coating the inner wall of a crucible of an ingot furnace with the mixture, thus forming a crucible coating; and after the crucible coating is solidified, adding silicon materials to the crucible of the ingot furnace and then carrying out melting, directional solidification and annealing on the silicon materials in sequence, thus obtaining the silicon ingot. In the preparation method of the silicon ingot, firstly the dopants are uniformly mixed with the coating materials and the inner wall of the crucible is coated with the mixture, and then at the silicon material melting stage, a small number of dopants enter the silicon liquid obtained after melting to be fused with the silicon liquid to undergo segregation; and the directional solidification process is the crystal growth stage and plenty of dopants on the inner wall of the crucible can diffuse in the silicon ingot, so that segregation of the dopants can be reduced and the resistivity of the silicon ingot can be effectively controlled, thus enabling the resistivity of the silicon ingot to be uniform in distribution, increasing the yield of the cast ingot and effectively reducing the cost. Besides, the invention also relates to the silicon ingot prepared by the preparation method.