The invention relates to the
chaotic laser field, and specifically relates to a
semiconductor chaotic laser integrated with double feedback. The
semiconductor chaotic laser integrated with double feedback solves the technical problems that a current chaotic laser generation apparatus is large in volume, is easy to be influenced by the environment, and is unstable in outputting. The
semiconductor chaotic laser utilizes double feedback to improve the chaotic bandwidth of an integrated device to make the
frequency spectrum to be more flat. For the semiconductor chaotic laser, a double-cavity structure eliminates the
fixed time delay of a common single-cavity integrated laser
chip; the double feedback cavity are similar in length but are different so that the time
delay characteristic of the single-cavity integrated laser is thoroughly eliminated; the security for chaotic communication, the accuracy for chaotic
laser ranging, and the randomness of the randomized number are improved; and the semiconductor chaotic laser can be applied to the communication field, the
remote sensing field, the sensing field and the like. The semiconductor chaotic laser integrated with double feedback only uses a DFB laser
chip, a high performance photoelectric
detector and a plane
lens fiber to realize chaotic output and detection, and can realize simultaneous output of a chaotic laser
signal and a chaotic
electric signal. The semiconductor chaotic laser integrated with double feedback also has the advantages of being small in the volume of the integrated structure and being low in cost.