42results about How to "Control resistivity" patented technology

An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.

An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize deposition on the walls of the chamber. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.

An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize deposition on the chamber walls. Sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.

The invention belongs to the field of material testing, specifically to a corrosion fatigue test apparatus with high temperature and high pressure circulating water. With the present invention, the problems of the complex structure and the cumbersome use and maintenance in the prior art are solved. The apparatus is provided with a high temperature and high pressure circulating water system, an autoclave and a fatigue machine. The high temperature and high pressure circulating water system is communicated with the autoclave. A test sample is placed in the autoclave, and is connected with a loading part of the fatigue machine. The high temperature and high pressure circulating water system comprises a water storage tank, a circulation pump, a high pressure pump, a buffer tank, a heat exchanger, a preheater, a condenser, a back pressure valve and an ion exchange resin. An inlet of the autoclave is connected with the heat exchanger through a pipeline. The pipeline is provided with the preheater. An outlet of the autoclave is connected with the heat exchanger through the pipeline. The high temperature and high pressure circulating water system is provided for providing high temperature and high pressure water required by the test. The fatigue machine is provided for performing fatigue loading for the test sample in the autoclave. A control system controls the high temperature and high pressure circulating water system and the fatigue machine.

The invention provides a crucible for polycrystalline-silicon ingot casting. The crucible comprises a crucible body and a doping layer. The crucible body comprises a base and a side wall extending upwards from the base, the doping layer is attached to the internal surface of the portion, between the portion the first height away from the base and the portion the second height away from the base, of the side wall, the first height is the distance from the fused silicon liquid level formed after a prefilled silicon material in the crucible is fused to the base of the crucible body, and the second height is the distance from the upper surface of a silicon ingot when fused silicon liquid is fully converted into a solid silicon ingot to the base of the crucible body; the material of the doping layer comprises silica wool or carbon fibers and a doped material loaded in silica wool or carbon fibers, the doped material comprises a first doping agent, and the first doping agent comprises P-shaped doping elements and any one of N-shaped doping elements and / or germanium elements; the initial atomic volume concentration of the first doping agent in the prefilled silicon material in the crucible is 1*10<13>-7*10<18> atmos / cm<3>. By means of the crucible, the heat transmission speed of the side wall of the crucible can be effectively decreased, the temperature of the doping layer is reduced, and it is avoided that the first doping agent is fused in advance.

The invention provides a voltage-controlled semiconductor structure, a voltage-controlled resistor and a manufacturing method thereof. The semiconductor structure comprises a substrate, a first adulteration trap and a second adulteration trap. The substrate is adulterated with a first type ion. The first adulteration trap has a second type ion and is formed in the substrate. The second adulteration trap has a second type ion and is formed in the substrate. The first type ion and the second type ion are inter-complementary. A resistor is formed between the first adulteration trap and the second adulteration trap. The electrical resistivity of the resistor is controlled by a differential voltage. An electrical resistivity of the resistor is related to a first deepness of the first adulteration trap, a second deepness of the second adulteration trap and a distance between the first adulteration trap and the second adulteration trap. The electrical resistivity of the resistor is higher than an electrical resistivity of a trap type resistor formed in a single adulteration trap having the second type ion.

The present invention discloses a Cu-doped indium sulfide film preparation method. According to the method, a vacuum evaporation method is adopted, a thin Cu layer is evaporated between two layers of indium sulfide films, and then Cu is diffused into the indium sulfide films by thermal annealing, so that the aim of preparing a Cu-doped indium sulfide film is fulfilled. According to the method disclosed by the present invention, doping concentration can be controlled by controlling the amount of the evaporated Cu, thereby fulfilling the aim of reducing film resistivity to varying degrees. The film prepared by the method disclosed by the present invention can be used as a buffer layer of a solar cell.

The invention provides a conductive concrete compounded with conductive materials and a preparation method thereof. The concrete is composed of cement, silica fume, carbon fiber, carbon nanomaterials (carbon nanotubes + carbon black + graphite), nano-zinc oxide, water reducing agent, filling Material, dispersant, defoamer, and water. The preparation method of the multifunctional conductive concrete mixed with conductive materials is simple and the performance is excellent. Replacing some carbon fibers with carbon nanomaterials has lower cost and stable electrical conductivity than traditional conductive concrete. Adding nano-zinc oxide can significantly improve the electrical conductivity of concrete. In the case of electrification, the concrete has good electrothermal performance, and it is applied to airport pavement, bridge deck and cement concrete pavement. It can melt ice and snow, detect road loads, cracks and expansion of concrete structures; It has good electromagnetic properties, can effectively shield electromagnetic waves, reduce electromagnetic radiation, and reduce electromagnetic interference.