Growing method of monocrystalline silicon and monocrystalline silicon
A growth method, single crystal silicon technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve problems such as difficulty in accurate prediction of dopant concentration, reduction of crystal ratio, deviation of crystal resistivity, etc.
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[0040] This embodiment proposes a method for growing single crystal silicon, comprising the following steps:
[0041] A single crystal silicon crystal with a diameter of 262 mm was grown by the Chess pulling method. 600kg of high-purity polysilicon is loaded into a high-purity quartz crucible, the design resistivity of the head is 1.1Ωcm, and 49.2g of high-purity metal gallium (dopant) is added. Under the protection of inert gas, the raw materials are melted to obtain a stable melt. Enter the seeding, necking, shouldering and equal-diameter growth procedures, and enter the finishing procedure when the crystal length is controlled to be about 330cm (the tail resistivity is about 0.4Ω㎝). At the end of the finishing stage, the temperature of the melt was increased, and the crystal pulling speed was increased to form a thin neck with a diameter of about 3 mm. When the thin neck grows stably at about 20mm, a small crystal with a diameter of 25.4mm is grown on the shoulder, and when...
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