Method for growing zinc oxide material by modulating temperature periodically

Abstract

The invention discloses a method for growing a zinc oxide material by modulating temperature periodically. The method comprises the following steps of: 1, selecting a substrate and zincifying the substrate in a low-temperature growing area of metal organic chemical vapor deposition (MOCVD) equipment; 2, inflating a zinc-source-containing metal organic compound and nitrous oxide into the low-temperature growing area of the MOCVD equipment by using carrier gas and growing a layer of low-temperature zinc oxide material on the substrate in the low-temperature growing area; 3, stopping inflating the metal organic compound and the nitrous oxide, transferring the zinc oxide material growing at low temperature from the low-temperature growing area of a reaction chamber to a high-temperature annealing area by using a transmission device of the MOCVD equipment and annealing quickly at high temperature; 4, transferring the substrate on which the zinc oxide material grows and which is annealed quickly at high temperature from the high-temperature annealing area to the low-temperature growing area by using the transmission device and repeating the step 2 and the step 3 for multiple times; and 5, transferring the substrate on which the zinc oxide material grows to a sampling area when the temperature of the low-temperature growing area is reduced to room temperature, taking a sample out and finishing the growth of the zinc oxide material.

Description

technical field [0001] The invention relates to the technical field of growth of novel compound semiconductor thin film materials, and the main content is to alternately perform low-temperature growth and high-temperature rapid annealing of zinc oxide materials in the same MOCVD reaction chamber (including a low-temperature growth zone 101 and a high-temperature annealing zone 102) to improve zinc oxide crystallization quality. At the same time, by adjusting the type and flow rate of the high-temperature annealing atmosphere, the background electron concentration in ZnO is reduced, laying a good foundation for the realization of high crystal quality, stable and reliable p-type ZnO materials. Background technique [0002] ZnO is one of the hot materials in wide-bandgap semiconductor research at present. It has attracted extensive attention due to its direct band gap and large exciton binding energy (60meV), and it is expected to be used in optoelectronic fields such as flat p...

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Problems solved by technology

Therefore, even if a high-quality zinc oxide material is obtained, its practical value is limited due to the small sample volume, and it is not possible to use large-scale and industrialized production.

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