Gold-iron alloy interconnection wire and manufacturing method thereof

Abstract

The invention discloses a gold-iron alloy interconnection wire and a manufacturing method thereof. The gold-iron alloy interconnection wire contains two elements of gold and iron, and the iron content is between 0.1% and 0.5%. The method includes: configuring the solution; cleaning the semiconductor chip; coating a layer of photolithography on the cleaned semiconductor chip glue, then expose and develop, photoetch the lines that need to be wired; sputter the seed layer on the chip; coat a layer of photoresist on the semiconductor chip again, then expose and develop, and expose the lines that need to be electroplated, no need The place where the electroplating is thickened is protected with photoresist to achieve selective electroplating; the semiconductor chip is fixed on the fixture, and the semiconductor chip is electroplated; the secondary photoresist is removed with acetone and ethanol; Put it into acetone and ethanol solution, and ultrasonically peel off the purely conductive seed layer during electroplating. The invention satisfies the needs of high power and high frequency compound semiconductor interconnection strength and resistivity.

Description

Technical field [0001] The invention relates to the technical field of integrated circuit metal wiring, in particular to a gold-iron alloy interconnection wire and a manufacturing method thereof. Background technique [0002] With the development of integrated circuits, integrated circuits are running faster and faster, and individual devices are becoming smaller and smaller. At a speed of several hundred MHz, the signal must pass through the metal system fast enough to prevent program delays. . Traditional metal wires such as Al and other metals will be restricted because of the phenomenon of macroscopic movement of metal ions under the action of the current under the condition of large current. When electromigration occurs in integrated circuit chips, metal ions will accumulate near the anode, and in severe cases, hillocks or protrusions will be formed. At the same time, a void appears in the wire near the cathode. In this way, it will cause circuit failure. For the chip man...

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Problems solved by technology

[0008] In view of this, the main purpose of the present invention is to provide a gold-iron alloy interconnection wire and its manufacturing method to meet the needs of low resistivity in the field of high-power and high-frequency compound semiconductors. At the same time, the thinning of the interconnection wires, especially To meet the needs of air bridge wiring, that is, the problem of low resistivity and certain strength, through the optimization of electroplating method and electroplating solution, the resistivity and strength of interconnection wires can be controlled

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