Gas phase mixing system device and method used for obtaining zone-melting silicon single crystal with wide specific resistance range

Abstract

The invention provides a gas phase mixing system device and a gas phase mixing system method used for obtaining zone-melting silicon single crystal with wide specific resistance range. The gas mixing system device comprises a phosphine gas pipeline, an argon pipeline, a furnace gas pipeline, and an exhausting pipeline; the four pipelines are connected with a bridge-shaped pipeline via VCO interfaces respectively; the phosphine gas pipeline and the argon pipeline are connected with one end of the bridge-shaped pipeline, and the furnace gas pipeline and the exhausting pipeline are connected with the other end of the bridge-shaped pipeline; the phosphine gas pipeline, the argon pipeline, and the furnace gas pipeline are all provided with mass flowmenters; and the exhausting pipeline is provided with a pressure control meter. The gas phase mixing system device is used for gas phase mixing; in molten globule phase of silicon single crystal growth via zone melting method, phosphine gas and argon are mixed in the bridge-shaped pipeline, and a mixture is delivered into the furnace gas pipeline; after the molten globule phase, crystal leading, shouldering, diameter equalizing and ending are carried out, and zone-melting silicon single crystal with a specific resistance range of 0.1 to 2000omega.cm is obtained by changing the amount of phosphine gas injected into a zone melting furnace.

Description

technical field [0001] The invention relates to a gas doping system device and method for obtaining molten silicon single crystal in a wide range resistivity region, and belongs to the technical field of production of molten silicon single crystal in a gas phase doping region. Background technique [0002] At present, silicon single crystals are mainly produced by the Czochralski method and the zone melting method. The content of oxygen and carbon in silicon single crystal produced by Czochralski method is high. The high oxygen content of silicon single crystals will produce a donor effect, which will reduce the resistivity of N-type silicon crystals, increase the resistivity of P-type silicon crystals, and even transform P-type crystals into N-type, making it difficult to control the electrical properties of silicon materials. The high oxygen content of silicon single crystals will also produce oxygen precipitation, which will induce secondary defects such as dislocations ...

AI Technical Summary

Problems solved by technology

Because of the poor mixing effect of ordinary gas phase doping system (gas doping system), the range of resistivity of zone melting silicon single crystal obtained with the same doping gas is very narrow.

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