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A kind of method for preparing Cu-doped indium sulfide film

A technology of indium sulfide and thin film, which is applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, electrical components, etc. It can solve the problems of lower resistivity, high resistivity of thin film, unfavorable conversion efficiency of thin film solar cells, etc., and achieve easy and uniform doping , high purity, and the effect of reducing film resistivity

Inactive Publication Date: 2017-11-17
FUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] But since In 2 S 3 High sheet resistivity (>10 2 Ω∙cm), which is not conducive to improving the conversion efficiency of thin-film solar cells
In view of this problem, the present invention adopts the method of vacuum thermal evaporation to carry out Cu doping to indium sulfide thin film, reduces its resistivity with this, and there is no relevant report yet to carry out Cu doping to indium sulfide thin film by vacuum thermal evaporation method

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  • A kind of method for preparing Cu-doped indium sulfide film
  • A kind of method for preparing Cu-doped indium sulfide film
  • A kind of method for preparing Cu-doped indium sulfide film

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Embodiment 1

[0039] A method for preparing a Cu-doped indium sulfide film, which specifically comprises the following steps:

[0040] Step 1): Clean the transparent glass sheet, that is, ultrasonically treat the glass sheet in deionized water, acetone, and ethanol for 15 minutes, then take it out, and dry it in a high-temperature drying oven at 100°C for 30 minutes;

[0041] Step 2): Place the dried glass sheet obtained in step 1) on the sample holder of the vacuum evaporation furnace, and then put it into the evaporation chamber; put 150mg of indium sulfide powder in the evaporation boat, and then put it into the evaporation chamber; Vacuumize the evaporation chamber to 1.0×10 -3After Pa, slowly apply current at a rate of 10A / min to heat the evaporation boat. When the current reaches about 90A, the indium sulfide powder on the evaporation boat begins to evaporate onto the glass sheet, and continue to slowly apply current until the sulfide in the evaporation boat After the indium powder e...

Embodiment 2

[0047] A method for preparing a Cu-doped indium sulfide film, which specifically comprises the following steps:

[0048] Step 1): Clean the transparent glass sheet, that is, ultrasonically treat the glass sheet in deionized water, acetone, and ethanol for 15 minutes, then take it out, and dry it in a high-temperature drying oven at 100°C for 30 minutes;

[0049] Step 2): Place the dried glass sheet obtained in step 1) on the sample holder of the vacuum evaporation furnace, and then put it into the evaporation chamber; put 150mg of indium sulfide powder in the evaporation boat, and then put it into the evaporation chamber; Vacuum the evaporation chamber to 1.0×10 -3 After Pa, slowly apply current at a rate of 10A / min to heat the evaporation boat. When the current reaches about 90A, the indium sulfide powder on the evaporation boat begins to evaporate onto the glass sheet, and continue to slowly apply current until the sulfide in the evaporation boat After the indium powder eva...

Embodiment 3

[0055] A method for preparing a Cu-doped indium sulfide film, which specifically comprises the following steps:

[0056] Step 1): Clean the transparent glass sheet, that is, ultrasonically treat the glass sheet in deionized water, acetone, and ethanol for 15 minutes, then take it out, and dry it in a high-temperature drying oven at 100°C for 30 minutes;

[0057] Step 2): Place the dried glass sheet obtained in step 1) on the sample holder of the vacuum evaporation furnace, and then put it into the evaporation chamber; put 300mg of indium sulfide powder in the evaporation boat, and then put it into the evaporation chamber; Vacuum the evaporation chamber to 1.0×10 -3 After Pa, slowly apply current at a rate of 10A / min to heat the evaporation boat. When the current reaches about 90A, the indium sulfide powder on the evaporation boat begins to evaporate onto the glass sheet, and continue to slowly apply current until the sulfide in the evaporation boat After the indium powder eva...

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Abstract

The present invention discloses a Cu-doped indium sulfide film preparation method. According to the method, a vacuum evaporation method is adopted, a thin Cu layer is evaporated between two layers of indium sulfide films, and then Cu is diffused into the indium sulfide films by thermal annealing, so that the aim of preparing a Cu-doped indium sulfide film is fulfilled. According to the method disclosed by the present invention, doping concentration can be controlled by controlling the amount of the evaporated Cu, thereby fulfilling the aim of reducing film resistivity to varying degrees. The film prepared by the method disclosed by the present invention can be used as a buffer layer of a solar cell.

Description

technical field [0001] The invention belongs to the technical field of material preparation, and in particular relates to a method for preparing a Cu-doped indium sulfide film. Background technique [0002] General copper zinc tin sulfur (Cu 2 ZnSnS 4 , referred to as CZTS) thin-film solar cell structure is: medium / bottom electrode / absorbing layer (CZTS) / buffer layer / transparent conductive layer / top electrode, where the buffer layer is mainly used to reduce the gap between the transparent conductive layer and the absorbing layer. For continuous phenomena, materials with high light transmittance and resistivity in the range of 5.0~120Ω∙cm are generally used. Current solar cells mainly use CdS as a buffer layer, but CdS is a toxic material and is not suitable for sustainable development, so it is necessary to develop a non-toxic and environmentally friendly material to replace it. Indium sulfide (In 2 S 3 ) is a non-toxic semiconductor material with a band gap of 2.0~3.7e...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/225H01L21/324H01L31/0304
CPCH01L21/02422H01L21/02568H01L21/02631H01L21/02697H01L21/225H01L21/3245H01L31/03042Y02E10/544
Inventor 俞金玲郑重明程树英赖云锋郑巧周海芳
Owner FUZHOU UNIV
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