117 results about "Indium(III) sulfide" patented technology

The invention relates to a carbon quantum dot, precious metal and zinc indium sulfide composite photocatalyst and a preparation method thereof. The composite photocatalyst contains a hexagonal-phase zinc indium sulfide (ZnIn2S4) matrix, and reduced carbon quantum dots and precious metal particles which are carried on the surface of the ZnIn2S4 matrix, wherein the ZnIn2S4 matrix is of a peony-flower-shaped structure, the particle size of the matrix is 0.1-10 micrometers and the BET specific surface area of the matrix is 10-200 m<2> / g; the particle size of the carbon quantum dots and the precious metal particles is 1-10 nm; precious metal refers to one or a mixture of some of gold, platinum, silver or palladium. The composite photocatalyst has high catalytic activity (with a hydrogen production rate up to 1mmol.h<-1>g<-1>) under irradiation of visible light (more than or equal to 400nm), and has long service life (over 50 hours).

The invention relates to a photocatalytic material, and particularly relates to a preparation method of an indium sulfide / carbon nitride composite nano material. The preparation method of the indium sulfide / carbon nitride composite nano material comprises the following steps: weighing g-C3N3 powder, dissolving into purified water, carrying out ultrasonic dispersion uniformly, then adding In(NO3)3.4.5H2O, carrying out magnetic stirring until dissolving completely, dropwise adding the prepared C2H5NS solution, carrying out magnetic stirring, transferring into a reaction kettle with an inner liner made of Teflon, putting into a baking oven, and carrying out hydrothermal reaction; and cleaning and drying to obtain the indium sulfide / carbon nitride composite nano material. The method protects the environment, is efficient, simple, convenient and feasible, and the prepared In2S3 / g-C3N4 composite material has a favorable application prospect in the fields of photocatalysis and the like.

The invention relates to a synthesis method of a novel visible-light photocatalyst indium sulfide, belonging to the technical field of preparation of photocatalysts. The method comprises the following steps: weighing indium chloride tetrahydrate, dissolving the indium chloride tetrahydrate in deionized water, adding acetic acid to regulate the pH value to 1-3, and adding thioacetamide solution, wherein the concentration of indium ions is 0.025 mol / L, and the In / S mol ratio is 1:4-1:10; heating the obtained mixed solution to constant temperature so as to carry out hydrothermal reaction for 4-8 hours while regulating the temperature to 80 DEG C, and cooling at room temperature; and carrying out vacuum filtration under reduced pressure, washing, and drying to obtain the orange indium sulfide powder. The indium sulfide prepared by the method provided by the invention is in a ball-flower shape, and has the advantages of large specific area and uniform size; and the indium sulfide powder is in a cubic structure. The indium sulfide can be used as a visible-light photocatalyst, and has good degradation effect on organic dyes (such as methyl orange).

The invention is applicable to the field of a lithium battery positive electrode material, and provides a high-voltage, high-compaction and low-cost lithium cobaltate positive electrode material and apreparation method thereof. The method comprises the steps of firstly, preparing a large-grain size lithium cobaltate positive electrode material doped with an additive A; secondly, preparing a small-grain size nickel cobalt manganese ternary positive electrode doped with an additive B; thirdly, mixing the large-grain size lithium cobaltate positive electrode material and the small-grain size nickel cobalt manganese ternary positive electrode according to a mass ratio, so that the compaction density of the material can be fully improved, and the cost of the positive electrode material can bereduced; and finally, performing sintering and smashing on the mixture and a coating agent C comprising indium sulfide to obtain a final finished product of the lithium cobaltate positive electrode material. By doping In<3+>, the structural stability of lithium cobaltate under a high-voltage state can be ensured, the cycle lifetime of the material is prolonged, and the safety of the material is improved.

The invention discloses a molybdenum-doped ZnIn2S4 hollow hierarchical-structure photocatalyst applied to photocatalytic water splitting for hydrogen production, belonging to the field of photocatalyst preparation and application. According to the invention, molybdenum powder serves as a molybdenum source, and the molybdenum-doped ZnIn2S4 hollow hierarchical-structure photocatalyst is prepared through a one-step solvothermal method. The method does not use a template agent or a surfactant, is simplified in preparation steps, and avoids excessive consumption of raw material and energy; preparation process is simple, and the raw materials are widely available; and the efficient photocatalyst is designed, regulated and controlled from the two aspects of structure and composition, so the economic benefit of photocatalysis is expected to be remarkably improved, and the industrialization process of photocatalysis is promoted.

The invention discloses a rare earth elements co-doped indium sulfide material as well as a preparation method and application thereof. The indium sulfide material is formed in a way that rare earth elements Yb and Tm are co-doped with indium sulfide. The preparation method comprises the following steps: dissolving an indium source, an ytterbium source, a thulium source and a sulfur source into water, so as to obtain mixed solution; performing a hydrothermal reaction on the obtained mixed solution; and performing washing and vacuum drying, so as to obtain the rare earth elements co-doped indium sulfide material. The rare earth elements co-doped indium sulfide material has the advantages of narrow energy gap, wide spectral response characteristic, and high photogenerated charge separation efficiency; and the preparation method has the advantages of being simple in process, strong in operability and low in production cost, being environment-friendly and pollution-free. When the rare earth elements co-doped indium sulfide material is used for treating heavy metal wastewater or dye wastewater, the indium sulfide material has the advantages of being short in reaction time in a treatmentprocess, high in utilization efficiency of solar energy, high in photocatalytic conversion efficiency, convenient in operation and the like, and therefore, the indium sulfide material can be widely applied to elimination of toxicity and harmless treatment for heavy metals and dyes in the wastewater and has great importance.

The invention discloses an indium sulfide photocatalyst with sulfur vacancies. The indium sulfide photocatalyst has a molecular formula of In2S3, abd is used for high-efficiency solar nitrogen fixation. A preparation method of the catalyst comprises the following steps: 1, taking an organic liquid as a solvent; 2, adding an organic substance and an indium salt compound to the organic solvent; 3, filling a reaction kettle with the obtained solution, and performing a constant temperature reaction; 4, cooling the obtained solution to room temperature, centrifuging the cooled solution, respectively washing the obtained reaction product with the organic solvent and an ethanol solution, drying the washed reaction product, and collecting the obtained powder to obtain MIL-68(In); 5, adding an organic sulfide to an organic alcohol solvent, and performing mixing and sufficient stirring; 6, adding MIL-68 (In), and performing mixing and sufficient stirring; 7, filling the reaction kettle with theobtained mixture, and carrying out a constant temperature reaction; 8, cooling the obtained solution to room temperature, centrifuging the cooled solution, washing the obtained solid with water and the ethanol solution respectively, drying the washed solid, and collecting the obtained powder to obtain indium sulfide; and 9, annealing the indium sulfide in a nitrogen atmosphere to produce sulfur vacancies. The catalyst obtained by the method of the invention has the advantages of environmental protection, harmlessness, realization of batch production, and efficient solar nitrogen fixation performance.

The invention provides a preparation method of metal-doped indium sulfide nanosheets. The preparation method comprises the steps that S1, indium salt, metal-doped salt and dialkyldithiocarbamate saltare mixed and reacted in an organic solvent to obtain a precursor complex; S2, the precursor complex is heated and reacted in an amine solvent to obtain the metal-doped indium sulfide nanosheets. Compared with the prior art, metal doping is introduced into the indium sulfide nanosheets by controlling synthesis and thermal decomposition of a precursor, the preparation process is simple and easy, massive nanosheets can be prepared, the precursor ratio can be controlled, and the concentration of doped ions can be precisely adjusted. The introduced ions have universality, the nanosheets are uniform in thickness and high in dispersibility, and the catalytic activity of the nanosheets in electroreduction of carbon dioxide is improved. By means of the method, the manganese-doped nanosheets are prepared, and moreover, the nanosheets doped with other ions can be massively prepared, and the preparation method is wide in application prospect.

A method for preparing a spinel-structure compound nanocrystal is characterized by comprising the steps ofsolvothermal synthesis of a spinel-structure indium sulfide precursor, preparation of a metal organic compound precursor, preparation of a reaction liquid, liquid-phase synthesis of a spinel-structure multi-sulfide, washing treatment and the like. The related technical method has the following obvious advantages: 1, the method has the advantages of simple process, convenient operation, no special equipment requirements, and low production cost; 2, the preparation technology is a wet chemical method, the reaction temperature is low, and the particle size of the product is small; and 3, a structural template method has quite good universality in preparation of spinel-structure M-In-S series compounds.

The invention relates to a preparation method for a tin-doped indium sulfide flower-like nano material and application of the nano material in photocatalytic reduction. The method comprises the following steps that absolute ethyl alcohol serves as a solvent, indium(III) chloride tetrahydrate, tin(IV) chloride pentahydrate and thioacetamide are sequentially added, uniform stirring is carried out, then the mixture is put into a polytetrafluoroethylene high-pressure reaction kettle, reaction is carried out for 8-20 hours at the temperature of 120-180 DEG C, and natural cooling is carried out to reach room temperature; and a product is treated so as to obtain a Sn-In2S3 photocatalytic material. According to the preparation method for the tin-doped indium sulfide flower-like nano material and the application of the nano material in photocatalytic reduction, the photocatalytic material has relatively large specific surface area and a proper pore structure, so that surface active sites are increased, the absorption capacity of visible light can be enhanced after tin is doped, so that compounding of photo-induced electrons and holes can be effectively inhibited, and more excellent photocatalytic performance can be achieved; and the Sn-In2S3 photocatalytic material can reduce uranium-containing wastewater, 95% or more of target pollutants can be reduced within 40 min, and excellent photocatalytic activity is achieved.

The invention discloses a preparation method of an indium zinc sulfide / bismuth vanadate composite material. The preparation method comprises the following steps: (1) mixing zinc chloride, indium chloride tetrahydrate and thioacetamide with water and glycerol, and stirring until the obtained mixture is uniformly dispersed; and (2) adding decahedral bismuth vanadate into the obtained mixed solution,stirring, and preparing the indium zinc sulfide / bismuth vanadate composite material by using a low-temperature solvothermal technology. The invention also discloses the indium zinc sulfide / bismuth vanadate composite material prepared by the method, and an application of the indium zinc sulfide / bismuth vanadate composite material as a photocatalyst in the field of new energy. The indium zinc sulfide / bismuth vanadate composite material has a very good catalytic effect on hydrogen production by photolysis of water, and can be repeatedly utilized for multiple times; and the composite material hasthe advantages of simple preparation process, easiness in recycling and the like, and has a wide application prospect in the field of new energy.

The invention relates to a method for preparing a nanometer indium cadmium sulfide-indium hydroxide composite photocatalyst. The chemical formula of the composite photocatalyst is CdIn2S4-In(OH)3. The catalyst is prepared from indium chloride, cadmium chloride, thiourea and deionized water by a hydrothermal method. According to the XRD (X-Ray Diffraction) spectrogram of the catalyst, along with the prolonging of hydrothermal time, the diffraction peak of In(OH)3 of a sample is gradually weakened and the diffraction peak of CdIn2S4 is gradually enhanced to form the CdIn2S4-In(OH)3 composite photocatalyst; no other impurity peak is found in the spectrogram. The method disclosed by the invention has the advantages that the method is simple in process and simple and convenient in operation; the obtained composite photocatalyst has very high photocatalytic activity and is used for performing catalytic reduction on CO2 to obtain methyl formate under the irradiation of ultraviolet light by taking methanol as a solvent, CO2 can be effectively reduced into organic ester and the green conversion is realized.

The invention relate to titanium-doped indium zinc sulfide flower-shaped microspheres as well as a preparation method and application thereof. The preparation method of the titanium-doped indium zincsulfide flower-shaped microspheres comprises the following steps of: placing indium zinc sulfide flower-shaped microspheres in a titanium salt solution, and carrying out heating and stirring for 0.25-3 h at 30-150 DEG C; and then centrifuging the mixed solution, taking a lower layer precipitate, washing the precipitate, and drying the precipitate to obtain the titanium-doped indium zinc sulfide flower-shaped microspheres, wherein the mass ratio of the indium zinc sulfide flower-shaped microspheres to the titanium salt is 100:(0.01-10). According to the preparation method provided by the invention, the indium zinc sulfide flower-shaped microspheres are placed in the titanium salt solution, and titanium ions are doped in the indium zinc sulfide flower-shaped microspheres by an impregnation method, so that the photocatalytic activity of indium zinc sulfide is further improved. The titanium-doped indium zinc sulfide flower-shaped microspheres prepared by the method have the advantages of stable appearance, larger specific surface area and higher photocatalytic hydrogen production activity, and can be used for photocatalytic decomposition of water to generate hydrogen.

The invention belongs to the field of nanosized semiconductor materials, and particularly discloses a two-dimensional non-layered In2SnS4 crystal material and a preparation method thereof. The preparation method specifically comprises the following steps: mixing indium sulfide, stannous sulfide and sodium chloride to obtain a precursor; placing the precursor in a central temperature zone, heatingthe precursor to generate an In2SnS4 crystal material, and bringing the In2SnS4 crystal material into a downstream deposition zone by using carrier gas so as to perform deposition on the substrate inthe downstream deposition zone, thereby forming the two-dimensional non-layered In2SnS4 crystal material. According to the invention, indium sulfide, stannous sulfide and sodium chloride are mixed toserve as a precursor, so the temperature of a central temperature area can be reduced, energy consumption in the preparation process is reduced, and controllability of the preparation process is achieved; meanwhile, a substrate is arranged in the downstream deposition area and keeps a certain distance away from the central temperature area, so the situation that the substrate is damaged due to thetoo high temperature of the central temperature area can be avoided.

The invention discloses a tungsten oxide nanorod / titanium carbide quantum dot / indium sulfide nanosheet Z-type heterojunction composite material and a preparation method and application thereof. The preparation method comprises the following steps: preparing titanium carbide quantum dots by utilizing multiple freeze thawing and ultrasonic methods, then placing tungsten trioxide nanorods prepared bya hydrothermal method into a titanium carbide quantum dot aqueous solution, carrying out stirring and then standing to obtain quantum dot loaded tungsten oxide nanorods; and uniformly stirring and mixing an indium compound and a sulfur compound in an ethylene glycol solvent, then adding the quantum dot loaded tungsten oxide nanorods, and performing reflux reaction at constant temperature to obtain the composite material. The titanium carbide quantum dots can provide excellent electron transport channels at different semiconductor interfaces, the light absorption range of the material is widened, and the utilization rate of the material on sunlight is improved. The Z-type heterojunction composite material disclosed by the invention can obviously improve the photocatalytic efficiency, and the performance of removing bisphenol A and hexavalent chromium in a water body under visible light is superior to that of tungsten trioxide / indium sulfide.

The present invention discloses a Cu-doped indium sulfide film preparation method. According to the method, a vacuum evaporation method is adopted, a thin Cu layer is evaporated between two layers of indium sulfide films, and then Cu is diffused into the indium sulfide films by thermal annealing, so that the aim of preparing a Cu-doped indium sulfide film is fulfilled. According to the method disclosed by the present invention, doping concentration can be controlled by controlling the amount of the evaporated Cu, thereby fulfilling the aim of reducing film resistivity to varying degrees. The film prepared by the method disclosed by the present invention can be used as a buffer layer of a solar cell.

The invention discloses a preparation method of a titanium carbide composite indium-zinc sulfide photo-anode, wherein the preparation method comprises the following steps: a, dispersing titanium aluminum carbide in hydrofluoric acid, and repeatedly centrifuging, washing with water and drying to obtain titanium carbide microspheres; b, taking indium chloride, zinc chloride and thioacetamide as rawmaterials to prepare a hydrothermal reaction solution, adding the reaction solution and fluorine-doped stannic oxide conductive glass (FTO) into a reaction kettle, carrying out a hydrothermal reaction, and cleaning and drying after the hydrothermal reaction is finished to obtain an indium-zinc sulfide photo-anode; and c, placing the indium-zinc sulfide photo-anode in a titanium carbide solution, soaking, cleaning and drying, and thus obtaining the titanium carbide composite indium-zinc sulfide photo-anode. The obtained photo-anode is used for photoelectrocatalytic decomposition of water to produce hydrogen, and titanium carbide can increase the charge carrier density of the photo-anode and effectively enhance the photoelectric property of indium-zinc sulfide, so that the solar photo-hydrogen conversion efficiency of the semiconductor photo-anode is improved.

The invention relates to a solar cell device based on an In2S3 netted nanocrystal array and a P3HT hybrid film. The device is produced as follows: first, producing a netted indium sulfide nanocrystal array by reaction in situ on ITO glass having a nano-indium surface, and then compositing the netted indium sulfide nanocrystal array with P3HT to assemble the film solar cell device. The preparation method comprises the following steps of: putting the ITO substrate material having a nano-indium surface, elemental sulfur powder and anhydrous ethanol solvent into a reaction kettle, directly reacting for 12 to 14 hours under temperature of between 140 DEG C and 180 DEG C to obtain a nano netted indium sulfide nanocrystal array film at the surface of the ITO substrate material by reaction in situ; after the reaction, naturally cooling to room temperature; successively cleaning end products with deionized water and anhydrous ethanol, and drying in vacuum under 50 DEG C; then spinningly coating P3HT on the prepared indium sulfide film under argon protection, finally coating a layer of Al or Au electrode by vaporization to assemble the solar cell device. The method is low in cost and is environment friendly. Besides, compared with physical vaporous deposition, spray painting and splitting decomposition method and thermal evaporation, the method overcomes the shortage of complex preparation process.

The invention relates to a preparation method of a photoelectrochemical 17 beta-estradiol aptamer sensor based on indium sulfide and cadmium sulfide co-sensitized cerium-doped titanium dioxide, and belongs to the field of photoelectrochemical sensors. According to the method, cerium-doped titanium dioxide is obtained by using a simple hydrothermal method to serve as a substrate material, and a light current is obtained; and for the cerium-doped titanium dioxide after indium sulfide sensitization, the photoelectric conversion efficiency is greatly improved, and the light absorption range is enlarged. Under the co-sensitization of cadmium sulfide, the positions of conduction bands of the three are reduced in a stepped mode, so that rapid transfer of electrons is facilitated, and an ideal light current signal is provided. The high-sensitivity detection of 17 beta-estradiol is realized by combining the specific recognition effect of an aptamer and the 17 beta-estradiol; the detection limitof the 17 beta-estradiol is 3.98 fg / mL; and the method has important significance in analysis and detection of the 17 beta-estradiol.

The invention relates to a new film formation method of an n-type In2S3 buffer layer and application. According to the film formation method and the application, the shortcomings in the prior art for manufacturing the In2S3 buffer layer are overcome. The film formation method includes the steps of manufacturing an In2S3 cake, manufacturing an In2S3 target material block, manufacturing In2S3 thin film, conducting annealing, and obtaining the n-type indium sulfide buffer layer with the electrical resistivity smaller than or equal to 5*10<-3>Ohm cm. By means of a solar cell obtained by a product of the new film formation method, the open-circuit voltage is 0.29 V, and the short-circuit current is 7.7 nA. The new film formation method has the advantages that the film formation method and the product are good in thin film uniformity coincidence, good in conductivity, stable in chemical constitution, free of environmental pollution and the like.

The invention relates to a preparation method and application of a biochemical sensor. The cerium and silver doped antimony tungstate is used as a substrate material, the large specific surface area of the cerium and silver doped antimony tungstate can increase capture of light and loading of biomolecules, doping of cerium and silver elements can provide an electronic path, a plasma effect is caused, and the separation efficiency of photo-generated charges is improved. Silver sulfide grows on cerium and silver doped antimony tungstate through in-situ consumption of part of silver ions by adopting a dipping method, and meanwhile, an energy band matching structure formed by modifying indium sulfide on cerium and silver doped antimony tungstate / silver sulfide has good photoelectric response. On the other hand, cadmium sulfide / polydopamine with excellent conductivity is used as a signal marker, polydopamine can be directly combined with biomolecules through Michael addition or Schiff base, cadmium sulfide can be better matched with cerium and silver doped antimony tungstate / silver sulfide / indium sulfide in energy bands, and the photoelectric conversion efficiency of the sensor is effectively improved. The biochemical sensor constructed based on the method has a wide linear range and high sensitivity, and has important significance on detection of a small cell lung cancer marker neuron-specific enolase.

The invention discloses an indium zinc sulfide nanosheet / tubular tin oxide heterojunction and a preparation method thereof, and application of the indium zinc sulfide nanosheet / tubular tin oxide heterojunction in degradation and removal of water pollutants. According to the method, tin oxide nanotubes are prepared through an electrostatic spinning technology and a high-temperature calcination technology; and tin oxide serves as a substrate, and indium zinc sulfide nanosheets evenly grow on the surface of the substrate through an oil bath so as to construct the indium zinc sulfide nanosheet / tubular tin oxide heterojunction. Indium zinc sulfide is an important metal sulfide, has a band gap width of 2.6 to 2.7 eV and is a good semiconductor material, so the prepared indium zinc sulfide nanosheet / tubular tin oxide heterojunction has a large specific surface area, can provide more adsorption sites and catalytic active sites, effectively improves the separation efficiency of photo-induced electrons and holes, further improves the activity of a photocatalytic reaction, and can be better used for photocatalytic separation and degradation of water pollutants.

The invention provides an indium zinc sulfide / zinc ferrite composite photocatalyst as well as a preparation method and application thereof. The preparation method comprises the following steps: a) mixing an iron source, a zinc source and polyvinylpyrrolidone in the presence of a first solvent, performing electrostatic spinning, and calcining to obtain ZnFe2O4 nanofibers; and b) mixing a zinc source, an indium source and a sulfur source in the presence of a second solvent, adding the ZnFe2O4 nanofiber obtained in the step a), and carrying out solvothermal reaction, so that the obtained ZnIn2S4 nanosheet is loaded on the ZnFe2O4 nanofiber to obtain the indium zinc sulfide / zinc ferrite composite photocatalyst. Compared with the prior art, the preparation method provided by the invention has the advantages that a two-dimensional ZnIn2S4 nanosheet photocatalyst is loaded on one-dimensional zinc ferrite (ZnFe2O4) nanofibers through a low-temperature solvothermal method, so that the ZnIn2S4 / ZnFe2O4 nano composite material is obtained, and the composite material can be used for carrying out photocatalytic degradation on waste gas so as to effectively treat the waste gas.

The invention belongs to the technical field of photocatalytic materials, and particularly relates to a preparation method of a core-shell structure indium cadmium sulfide@N-titanium dioxide composite photocatalyst. The preparation method comprises the steps: preparing NH2-MIL-125(Ti), preparing N-TiO2 derived from the NH2-MIL-125(Ti), enabling CdIn2S4 to grow in situ along the epitaxy of the N-TiO2 by controlling the reaction time and the addition amount of reactants, forming a CdIn2S4 flower sheet to wrap an N-TiO2 circular plate, and thus obtaining the core-shell structure indium cadmium sulfide@N-titanium dioxide composite photocatalyst having a good photocatalytic degradation effect on rhodamine B organic matters. The preparation method has the beneficial effects that the preparation method is simple and convenient to operate, the preparation conditions are well controlled, and the prepared indium cadmium sulfide@N-titanium dioxide composite photocatalyst has good photocatalytic degradation activity and stability and has a certain application prospect.

The invention relates to a preparation method of a porous NH2-UiO-66-d / indium zinc sulfide composite visible-light-induced photocatalyst. The preparation method comprises the following steps: preparing NH2-UiO-66-d with a porous structure by adopting a silver-catalyzed decarboxylation method, and then preparing the NH2-UiO-66-d / indium zinc sulfide composite visible-light-induced photocatalyst by utilizing an in-situ hydrothermal method. The beneficial effects of the invention are that the preparation method is low in cost and high in repeatability; preparation conditions are mild and controllable; the prepared NH2-UiO-66-d / indium zinc sulfide composite visible-light-induced photocatalyst is a green and environment-friendly photocatalyst, photocatalytic hydrogen production activity can be effectively improved by compounding NH2-UiO-66-d having a porous structure with indium zinc sulfide, and the photocatalyst has a certain application prospect in the field of photocatalytic hydrolysis hydrogen production.

The invention belongs to the field of nano semiconductor materials, and discloses a preparation method of a two-dimensional In2S3 / SnS heterojunction crystal material. The preparation method comprises the following steps: mixing indium sulfide, stannous sulfide and sodium chloride to obtain a precursor, putting the precursor in a central temperature region of a single-temperature-region reaction furnace, under the condition of introducing a carrier gas, heating the reaction furnace to a preset target temperature to carry out a reaction so as to bring gas-phase In2S3 and gas-phase SnS generated by heating evaporation of the precursor into a deposition region located at the downstream of the central temperature region by using the carrier gas, thereby forming the two-dimensional In2S3 / SnS heterojunction crystal material on a substrate located at the downstream deposition region through deposition. By improving the one-step reaction principle, key reaction conditions and parameters (such as raw material composition, reaction temperature conditions and the like) of the preparation method, compared with the prior art, the two-dimensional in-plane and / or vertical In2S3 / SnS heterojunction can be prepared by a one-step method, and the preparation method is simple in mechanism and convenient to regulate and control.

The invention discloses a preparation method of a tungsten disulfide / indium sulfide composite nano material. The method comprises the following steps of: (1) dissolving tungsten hexachloride in an organic solvent until the solid is completely dissolved to form a solution A; (2) dissolving indium nitrate in an organic solvent to form a solution B; and (3) dropwise adding the solution B into the solution A, performing stirring, adding thioacetamide and ammonium diallyl methyl dodecyl bromide, and carrying out solvothermal reaction at 120-200DEG C to obtain the tungsten disulfide / indium sulfide composite nano material. The preparation steps are simple, the cost is low, the advantages of tungsten disulfide and indium sulfide are organically combined, the tungsten disulfide and indium sulfide generate a photoelectric synergistic effect, and the photocatalytic activity is enhanced.

The invention belongs to the technical field of semiconductor photocatalysis, and particularly relates to a black phosphorus-zinc indium sulfide composite visible-light photocatalyst and a preparation method thereof. According to the invention, two-dimensional layered black phosphorus and a petal-shaped ZnIn2S4 with controllable morphology are taken as catalysts, and tight bonding of an interface between the black phosphorus and the ZnIn2S4 is realized through a continuous mechanical mixing effect. The composite catalyst has the characteristics of good dispersibility, high interface interaction, excellent hydrogen production performance and the like, and high-efficiency performance of producing hydrogen by water photolysis benefits from effective inhibition of photoelectron-hole between the black phosphorus and the ZnIn2S4 and effective separation of photoinduced charges. Meanwhile, the black phosphorus / ZnIn2S4 composite catalyst is simple and convenient to recover, exhibits the characteristic of high activity after multiple recycling, and meets requirements of green economy. According to the black phosphorus / ZnIn2S4 composite photocatalyst and the preparation method thereof, a new path is provided for design and development of high-efficiency visible light catalysts.

The present invention discloses an indium sulfide doped cuprous sulfide thermoelectric material and a preparation method thereof, wherein the general formula is Cu2S-xIn2S3, and x is the mole percentof indium sulfide to cuprous sulfide. The preparation method comprises two steps such as manual grinding and discharge plasma sintering, and specifically comprises: weighing a certain mass of cuproussulfide and the corresponding molar percentage of indium sulfide, completely mixing the two materials, grinding for 30-60 min by using an agate mortar, and completing sintering, doping and material preparation in one step by using a discharge plasma sintering technology (SPS) to obtain the compact bulk thermoelectric material. According to the present invention, the preparation method is simple, rapid and efficient, and the power factor of cuprous sulfide is significantly improved so as to significantly improve the thermoelectric performance of cuprous sulfide; and by introducing indium sulfide, the phase change of cuprous sulfide at the high temperature is suppressed, such that the practical application of the material can be easily achieved.

The invention discloses a method for synthesizing a silver indium sulfide heterojunction structure nano material through a hydro-thermal mode. The method comprises steps of dissolving an alcoholic suspension of silver nanowires in de-ionized water, stirring the alcoholic suspension, adding indium trichloride tetrahydrate crystal to the mixing liquid, conducting magetic stirring, adding a certain amount of surface active agent cetyl trimethyl ammonium bromide, stirring the surface active agent cetyl trimethyl ammonium bromide till the surface active agent cetyl trimethyl ammonium bromide is dissolved completely, adding a certain amount of thiacetamide, stirring the thiacetamide till the thiacetamide is dissolved completely, regarding the formed mixing liquid as a precursor solution of the silver indium sulfide heterojunction structure nano material, refluxing and heating the precursor solution in a round bottom flask with three necks by using a hydro-thermal method, changing conditions, and obtaining nano structure materials with different shapes. The reaction system is simple, the reaction temperature is low, the synthesized silver indium sulfide structure is novel, the synthesized composite material yield is high, and the reverse specific discharge capacity of the material is high when the material serves as a lithium material cathode. Besides, the method has good repeatability and operability.