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Film formation method of n-type In2S3 buffer layer and application of film formation method of n-type In2S3 buffer layer

A film-forming method and a buffer layer technology, which are applied in coating, metal material coating process, ion implantation plating, etc., can solve the problems of thin-film light-transmitting solar cell performance, difficulty in accurately controlling film composition, etc., and achieve conductive The effect of good characteristics and stable device performance

Active Publication Date: 2015-01-07
黄山市开发投资集团有限公司
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  • Abstract
  • Description
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Problems solved by technology

However, the existing vapor deposition technology is difficult to accurately control the composition of the film, which will affect the light transmission characteristics of the film and the performance of solar cells

Method used

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  • Film formation method of n-type In2S3 buffer layer and application of film formation method of n-type In2S3 buffer layer
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  • Film formation method of n-type In2S3 buffer layer and application of film formation method of n-type In2S3 buffer layer

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preparation example Construction

[0055] Using the n-type In of the present invention 2 S 3 The product obtained by the buffer layer method is further prepared into a solar cell, which is composed of n-In 2 S 3 The buffer layer 3 of the film and the substrate 1 made of p-Si are composed; the n-In 2 S 3 The buffer layer 3 of the film is β-In 2 S 3 Film composition. The top surface of the substrate 1 made of p-Si is made of n-In 2 S 3 The bottom surface of the buffer layer 3 of the film is connected; the material is n-In 2 S 3 The top surface of the buffer layer 3 of the film is provided with circular electrodes 4 arranged in an array with a thickness of 30-50 nm and made of metal In; on the bottom surface of the substrate 1 made of p-Si, a material The bottom electrode layer 2 of metal Ag; the n-In 2 S 3 The resistivity of the buffer layer 3 of the film is 1.00 – 5.00×10 -3 Ω·cm; the open circuit voltage of the solar cell is 0.29 V, the short circuit current is 7.7 nA, and the fill factor is 0.39.

[0056] Further...

Embodiment 1

[0061] Using glass as the substrate, soak in acetone, ethanol, and deionized water for ultrasonic cleaning for 8 minutes, take it out, and dry it in a vacuum drying oven; put In 2 S 3 The compound target is fixed on the target holder, the silicon wafer is fixed on the sample holder, the temperature of the vacuum chamber is normal temperature, and the vacuum is pumped to 5×10 -3 Below Pa, the target holder speed is 5r / min counterclockwise, the sample holder speed is clockwise 5r / min, the laser wavelength is 248nm, the pulse width is 25ns, the laser energy is 154mJ, the laser frequency is 5Hz, and the coating time is 30min. During annealing, the rapid annealing furnace is pre-evacuated to 1 Pa, then Ar gas is introduced to atmospheric pressure, and then vacuumed, vacuuming and charging are repeated 2 times, and then Ar gas is continuously introduced, maintaining the pressure at about 0.04 MPa, at 4℃ / The temperature is increased to 300°C at the speed of s, and the temperature is ma...

Embodiment 2

[0064] Using p-type silicon wafer as the substrate 1, soak in acetone, ethanol, and deionized water for ultrasonic cleaning for 8 minutes, take it out, and dry it in a vacuum drying oven; 2 S 3 The compound target is fixed on the target holder, the silicon wafer is fixed on the sample holder, the temperature of the vacuum chamber is normal temperature, and the vacuum is pumped to 5×10 -3 Below Pa, the target holder speed is 5r / min counterclockwise, the sample holder speed is 5r / min clockwise, the laser wavelength is 248nm, the pulse width is 25ns, the laser energy is 174mJ, the laser frequency is 5Hz, and the coating time is 30min. During annealing, the rapid annealing furnace is pre-evacuated to below 1Pa, then Ar gas is introduced to atmospheric pressure, vacuuming and charging are repeated twice, and then Ar gas is introduced to maintain the pressure at about 0.04 MPa, and the temperature is increased at a rate of 4°C / s. 300°C, keep this temperature for 30 minutes, then drop t...

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Abstract

The invention relates to a new film formation method of an n-type In2S3 buffer layer and application. According to the film formation method and the application, the shortcomings in the prior art for manufacturing the In2S3 buffer layer are overcome. The film formation method includes the steps of manufacturing an In2S3 cake, manufacturing an In2S3 target material block, manufacturing In2S3 thin film, conducting annealing, and obtaining the n-type indium sulfide buffer layer with the electrical resistivity smaller than or equal to 5*10<-3>Ohm cm. By means of a solar cell obtained by a product of the new film formation method, the open-circuit voltage is 0.29 V, and the short-circuit current is 7.7 nA. The new film formation method has the advantages that the film formation method and the product are good in thin film uniformity coincidence, good in conductivity, stable in chemical constitution, free of environmental pollution and the like.

Description

technical field [0001] The invention belongs to the technical field of photovoltaic material preparation, in particular to a method for preparing n-type indium sulfide (n-In 2 S 3 ) film-forming method of the buffer layer, and by n-In 2 S 3 buffer layer to further obtain solar cells. technical background [0002] The energy crisis has prompted more and more people to turn their attention to clean renewable energy, such as solar energy and wind energy. Solar energy is the cleanest, safest and most reliable energy source in the future. Since the end of the last century, countries around the world have legislated and supported it, making the photovoltaic power generation industry one of the fastest-growing emerging industries in the world. [0003] In 1954, Bell Laboratories of the United States first reported monocrystalline silicon solar cells, which opened a new era of p-n junction solar cells. Today, p-n junction solar cells still occupy an absolute position in the fiel...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18C23C14/28C23C14/06
CPCC23C14/0623C23C14/28H01L31/18Y02P70/50
Inventor 吴春艳王文坚毛盾罗林保王莉于永强许俊
Owner 黄山市开发投资集团有限公司
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