140results about How to "Narrow band gap" patented technology

The invention belongs to the field of photocatalyst preparation and particularly relates to a preparation method of an amorphous iron oxyhydroxide / bismuth vanadate composite photocatalytic material. The preparation method of the amorphous iron oxyhydroxide / bismuth vanadate composite photocatalytic material comprises the following process steps of synthesizing bismuth vanadate through a hydrothermal method, adopting synthesized bismuth vanadate as a substrate, putting the bismuth vanadate into a mixed solution of ferric chloride and ammonium bicarbonate for stirring, and drying the mixture after centrifuging to obtain a finished product, namely the amorphous iron oxyhydroxide / bismuth vanadate composite photocatalytic material. According to the preparation method, an amorphous material is used as a cocatalyst, and due to the special structure of the amorphous material, the amorphous material lacks ordered atomic arrangement and thus has narrower forbidden bands. These characteristics lead to more defects on the surface of a catalyst, more active sites are provided, the light absorption range is enlarged, and the photocatalytic performance is further improved.

The invention discloses a NiO / CdSe / MoS2 laminar composite photocathode and a preparation method thereof. The preparation method comprises the following steps: (1) with ITO conductive glass as a base, preparing a uniform and consistent nickel oxide layer employing a hydrothermal process; (2) loading cadmium selenide on the surface of nickel oxide by adopting an ion alternate adsorption method; and (3) with a NiO / CdSe electrode as a cathode, and (NH4)2[MoS4] as a deposition liquid, depositing MoS2 particles on the surface of the NiO / CdSe electrode by adopting a light-assisted potentiostatic deposition method, so as to obtain a MoS2-modified electrode. According to the method for preparing the photocathode, the amounts of an absorption agent and a cocatalyst are controllable; and under visible light irradiation, the composite photocathode shows good photoelectrocatalytic activity and visible light response characteristics, is stable in performance, and can be effectively applied to the field of photoelectrocatalysis of water decomposition to produce hydrogen.

The invention relates to a carbon nano tube and vanadate composite nanofiber photocatalyst and a preparation method thereof. The composite nanofiber photocatalyst is formed by compositing a carbon nano tube and vanadate at a ratio of (10-30mg):1mmol. Organic vanadic salt with good alcohol solubility and transition metal nitrate serve as precursor reactants; a spinning solution is prepared by virtue of PVP (polyvinyl pyrrolidone) and an ethanol system; carbon nano tube powder is uniformly dispersed in the spinning solution; a yarn is formed by an electrostatic spinning device; and the carbon nano tube and vanadate composite nanofiber photocatalyst is obtained after high-temperature roasting. The surface of a prepared composite nanofiber is in a rich hole layer structure, and is narrower in band gap width; and the carbon nano tube and vanadate composite nanofiber photocatalyst has very good visible photocatalytic degradation ability to a water pollutant, namely ofloxacin, and can achieve quick separation through a precipitate and the solution.

The invention discloses a rare earth elements co-doped indium sulfide material as well as a preparation method and application thereof. The indium sulfide material is formed in a way that rare earth elements Yb and Tm are co-doped with indium sulfide. The preparation method comprises the following steps: dissolving an indium source, an ytterbium source, a thulium source and a sulfur source into water, so as to obtain mixed solution; performing a hydrothermal reaction on the obtained mixed solution; and performing washing and vacuum drying, so as to obtain the rare earth elements co-doped indium sulfide material. The rare earth elements co-doped indium sulfide material has the advantages of narrow energy gap, wide spectral response characteristic, and high photogenerated charge separation efficiency; and the preparation method has the advantages of being simple in process, strong in operability and low in production cost, being environment-friendly and pollution-free. When the rare earth elements co-doped indium sulfide material is used for treating heavy metal wastewater or dye wastewater, the indium sulfide material has the advantages of being short in reaction time in a treatmentprocess, high in utilization efficiency of solar energy, high in photocatalytic conversion efficiency, convenient in operation and the like, and therefore, the indium sulfide material can be widely applied to elimination of toxicity and harmless treatment for heavy metals and dyes in the wastewater and has great importance.

The invention discloses a graphitic carbon nitride / polypyrrole composite photocatalytic material and a preparation method thereof. The technical process of the preparation method comprises the steps as follows: dispersing graphitic carbon nitride in a medium, stirring the medium at the temperature of 0-10 DEG C for 30 min to obtain a graphitic carbon nitride dispersing liquid, dropwise adding pyrrole into the graphitic carbon nitride dispersing liquid with stirring to obtain a mixed solution, stirring the mixed solution at the temperature of 0-10 DEG C for 30 min, dropwise adding a prepared initiator solution into the mixed solution, stirring the mixture at the temperature of 0-10 DEG C for reaction for 10 h, washing an obtained product for several times, and performing vacuum drying on the product to obtain the graphitic carbon nitride / polypyrrole composite photocatalytic material. The graphitic carbon nitride / polypyrrole composite photocatalytic material and the preparation method thereof have the advantages that the preparation technology is simple, the cost is low, and the large-scale industrial production is facilitated; and the graphitic carbon nitride / polypyrrole composite photocatalytic material has good environmental stability, has a better degradation effect on organic dye rhodamine B with certain concentration and can be applied to treatment of contaminated wastewater.

The invention relates to a preparation method for a GaAs / Ge / GaAs heterostructure SPiN diode string used for a sleeve antenna. The preparation method comprises the steps of (a), selecting a GeOI substrate; (b), etching a top layer Ge layer of the GeOI substrate to form a first trench and a second trench in the top layer Ge layer; (c), depositing a GaAs material in the first trench and the second trench; (d), performing P type ion implantation on the GaAs material in the first trench by adopting an ion implantation process to form a P type active region, and performing N type ion implantation on the GaAs material in the second trench to form an N type active region; and (e), forming lead holes in the surfaces of the P type active region and the N type active region and performing metal sputtering to form the GaAs / Ge / GaAs heterostructure SPiN diode. According to the embodiments, the high-performance Ge-based SPiN diode string, which is applicable to formation of a solid-state plasma antenna, can be prepared and provided through a deep trench isolation technology and the ion implantation process.

The present invention provides an ultra steep average subthreshold swing nano wire tunneling field effect transistor and a method for preparing the same which belong to the field effect transistor logic device field of the CMOS ultra large scale integration (ULSI). The tunneling field effect transistor adopts a nano wire structure of core-multilayered shell, and the material band gap of a multilayered shell part is increased continuously along the radius direction of the nano wire. According to the present invention, a subthreshold slope degradation phenomenon in a device transfer characteristic can be restrained effectively, at the same time, an average subthreshold slope of the tunneling field effect transistor is reduced remarkably, and a more steep minimum subthreshold slope is kept.

The invention relates to a method for preparing a graphene-SnIn4S8 nano composite photocatalyst at low temperature by adopting a coprecipitation method. The method is characterized by comprising the following steps: preparing graphene oxide by utilizing a modified Hummers method, and reducing the graphene oxide by utilizing 80% hydrazine hydrate to obtain reduced graphene oxide; dissolving raw materials such as tin chloride, indium chloride and thioacetamide in an organic alcohol solution, mixing the reduced graphene oxide which is prepared in advance, and preparing the graphene-SnIn4S8 nano composite photocatalyst bonded in chemical bonds by utilizing a low-temperature co-precipitation method. The method has characteristics that the reaction temperature is low, the reaction time is short, the prepared graphene-SnIn4S8 nano composite photocatalyst is relatively large in specific surface area and narrow in energy gap, photo-generated electrons can be effectively separated from electron holes, the stability is high, the regeneration performance is good, and the light absorption activity and the light catalytic activity are relatively strong under the visible light.

The invention provides a graphite-phase-like carbon nitride-(110) crystal face bismuth vanadate Z-type heterojunction photocatalyst and a preparation method and application thereof. The method comprises the following steps of 1, preparing exposed (010) crystal face BiVO4 powder and H2SO4 modified g-C3N4 powder; 2, adding the exposed (010) crystal face BiVO4 powder into water, and conducting ultraviolet illumination; dissolving the modified g-C3N4 powder into water, and conducting ultraviolet illumination; 3, adding a BiVO4 solution after ultraviolet treatment into a g-C3N4 solution which is subjected to ultraviolet illumination and negatively charged to obtain a precursor solution, and conducting ultraviolet illumination on the precursor solution to obtain g-C3N4-(110) crystal face BiVO4Z-type heterojunction photocatalyst powder. The catalyst enlarges the response range of visible light, reduces the recombination rate of electrons and hole pairs, improves the separation efficiency of charge carriers and improves the photocatalytic performance of the BiVO4-based composite photocatalyst.

The invention relates to a preparation method for a tin-doped indium sulfide flower-like nano material and application of the nano material in photocatalytic reduction. The method comprises the following steps that absolute ethyl alcohol serves as a solvent, indium(III) chloride tetrahydrate, tin(IV) chloride pentahydrate and thioacetamide are sequentially added, uniform stirring is carried out, then the mixture is put into a polytetrafluoroethylene high-pressure reaction kettle, reaction is carried out for 8-20 hours at the temperature of 120-180 DEG C, and natural cooling is carried out to reach room temperature; and a product is treated so as to obtain a Sn-In2S3 photocatalytic material. According to the preparation method for the tin-doped indium sulfide flower-like nano material and the application of the nano material in photocatalytic reduction, the photocatalytic material has relatively large specific surface area and a proper pore structure, so that surface active sites are increased, the absorption capacity of visible light can be enhanced after tin is doped, so that compounding of photo-induced electrons and holes can be effectively inhibited, and more excellent photocatalytic performance can be achieved; and the Sn-In2S3 photocatalytic material can reduce uranium-containing wastewater, 95% or more of target pollutants can be reduced within 40 min, and excellent photocatalytic activity is achieved.

The invention discloses a tunneling field effect transistor and a preparation method, and belongs to the field of a field effect transistor logic device of a CMOS (Complementary Metal Oxide Semiconductor) ultra-large scale integrated circuit (ULSI). A tunneling source region and a channel region of the tunneling field effect transistor are of heterogeneous structures in the vertical direction of the device; the upper layer is made of a semiconductor material with larger forbidden bandwidth; the middle layer is made of a semiconductor material with smaller forbidden bandwidth; the lower layer is a semiconductor substrate with the larger forbidden bandwidth. Compared with the prior art, the transistor and the method have the advantages that the degradation phenomenon of sub-threshold slope in device transfer characteristic can be effectively inhibited, meanwhile the average sub-threshold slope of the tunneling field effect transistor is obviously reduced, and steep minimum sub-threshold slope is kept.

The invention relates to a preparation method for a visible-light-responsive photocatalytic semiconductor material. The semiconductor material is a nanosphere with a uniform porous structure, a uniform size, good dispersibility and a diameter of 60 to 120 nm. A preparation method for the semiconductor material comprises the following steps: 1) preparing a solution from a bismuth source and deionized water and adding a surfactant into the solution; 2) adding hydrogen peroxide into a mixed solution obtained in step 1), transferring an obtained solution into a reaction vessel and carrying out a reaction so as to obtain an earthy yellow precursor solution; 3) subjecting the obtained precursor solution to natural cooling at first and then to washing and carrying out drying with a baking oven; and 4) uniformly grinding a precursor obtained after drying and calcining the ground precursor in a tubular furnace. The invention has the following beneficial effects: as a material for degradation of pollutants, the semiconductor material shows excellent degradation performance, a narrow energy band gap and good cycling stability. The preparation method is simple, accords with requirements for green chemistry and is beneficial for market popularization.

The invention provides a femtosecond laser ablation-based infrared-enhanced Si-PIN detector and a preparation method thereof. The detector comprises an intrinsic silicon substrate, a femtosecond laser ablation microstructure layer, an infrared-enhanced amorphous silicon-ruthenium alloy film, a lower electrode, a P-type region, an annular P+ type region and an upper electrode, wherein the femtosecond laser ablation microstructure layer is a micron sharp cone array. The unabsorbed light which transmits through a space charge region is reflected for multiple times; a light propagation path and the photo capture ratio are increased; absorption and utilization of the light are improved; more photo-induced carriers are excited; the responsivity of the detector is improved; a relatively narrow optical band gap is obtained through controlling the ruthenium content; and the band gap of a silicon material is narrowed, so that near-infrared light with lower energy and a larger wavelength is captured; absorption of the near-infrared light can be additionally increased; and the detection spectrum range of a photoelectric detector is expanded.

The invention discloses a copper sulfide / bismuth vanadate heterojunction photocatalyst and a preparation method thereof. The copper sulfide / bismuth vanadate heterojunction photocatalyst comprises a copper sulfide and bismuth vanadate, and the copper sulfide is attached to the bismuth vanadate. The preparation method comprises the following steps: preparing a suspension of bismuth vanadate and copper nitrate; preparing a suspension liquid of bismuth vanadate, copper nitrate and sodium thiosulfate; carrying out water bath reaction on the suspension liquid of bismuth vanadate, copper nitrate andsodium thiosulfate to obtain the copper sulfide / bismuth vanadate heterojunction photocatalyst. The copper sulfide / bismuth vanadate heterojunction photocatalyst has the advantages of being wide in visible light response range, high in quantum efficiency, high in photocatalytic activity and the like, is a novel semiconductor photocatalytic material, and has good application value and application prospect, the catalyst prepared by the preparation method is high in crystallization degree, free of impurities in the preparation process, simple in process, mild in reaction conditions, convenient to operate, clean, pollution-free and the like, is suitable for large-scale preparation, and is convenient for industrial utilization.

The invention discloses a perovskite hybrid solar cell based on a cadmium sulfide nanoarray. The perovskite hybrid solar cell comprises a substrate, a transparent metal electrode layer, an inorganic electron transport layer, a photosensitive layer, a hole transport layer and a metal electrode layer; the transparent metal electrode layer, the inorganic electron transport layer, the photosensitive layer, the hole transport layer and the metal electrode layer are orderly arranged on the substrate from bottom to top; the inorganic electron transport layer is formed from the cadmium sulfide nanoarray; the form of the cadmium sulfide nanoarray is nanorod, nanowire or nanotube. The perovskite hybrid solar cell is characterized in that the cadmium sulfide nanoarray is taken as the electron transport layer material instead of high-temperature sintered metal oxides widely used at present, and has relatively small band gap width and is relatively wide in an absorption spectrum to sunlight; the interface area of the electron transport layer material and the material of the photosensitive layer is increased and a continuous electron transport channel is provided; compared with high temperature sintering, the perovskite hybrid solar cell has the advantages of low cost, low energy consumption and easily realizable large-area preparation.

The invention discloses a graphene and vanadate composite nano-fiber photocatalyst and a preparation method thereof. The composite nano-fiber photocatalyst is prepared by compounding two components including graphene and vanadate according to a proportion that 10-30mg of the graphene is used when 1mmol of the vanadate is used; and the graphene and vanadate composite nano-fiber photocatalyst is obtained by taking an organic vanadium salt with good alcohol solubility and rare-earth metal nitrate as precursor reactants, preparing a spinning solution by making use of a PVP (polyvinyl pyrrolidone) and ethanol system, uniformly dispersing graphene powder into the spinning solution at the same time, performing electric spinning to form silks by using an electrostatic spinning device, and performing high-temperature roasting. Graphene and vanadate composite fibers show rich porous layer structures and narrower band gap width, show very good visible light catalytic degradation capacity to a contaminant ofloxacin in water, and can be quickly separated from a solution through precipitating.

The invention discloses a preparation method for an Au-ZnIn2S4 nanoarray electrode photocatalytic nitrogen fixation material, belonging to the field of preparation and modification methods for photoelectrochemical catalytic materials. The preparation method comprises the following steps: based on a ZnIn2S4 nanoarray electrode, performing photodeposition of Au nanoparticles on the surface of the ZnIn2S4 nanoarray electrode so as to improve the photocatalytic nitrogen fixation performance of ZnIn2S4; growing a layer of a ZnIn2S4 nanosheet array on FTO conductive glass by adopting a hydrothermalmethod, and depositing Au particles on the surface of the ZnIn2S4 nanosheet array by adopting a photodeposition method so as to prepare an Au-ZnIn2S4 electrode; fixedly putting the Au-ZnIn2S4 electrode slice in an aqueous methanol solution, continuously introducing high-purity nitrogen, converting N2 into NH3 under the illumination of a xenon lamp, and then converting NH3 into NH4<+>; and mixing areaction solution with a Nessler's reagent for color development, and determining the concentration of NH4<+> in the reaction solution so as to further determine the photocatalytic nitrogen fixationperformance of the material. The method has the advantages of simple preparation, loose preparation conditions, no toxicity, and easy recovery and cyclic utilization of the material in the process ofapplication; since ZnIn2S4 is narrow in forbidden band width and can absorb visible light in a larger range, and Au also has strong absorption performance in a visible light range, the material is increased in the comprehensive utilization rate of visible light.

The invention discloses an optimized L-type tunneling field effect transistor and a preparation method thereof and mainly solves the problems of low on state current and severe bipolar effect of an existing device. The optimized L-type tunneling field effect transistor comprises an SOI (silicon on insulator) substrate (1), isolation grooves (2), a source region (3), a channel region (4), a drain region (6), a gate region (5) and a conducting layer (7), wherein the isolation grooves (2) are located on two sides of the SOI substrate (1), and the source region (3), the channel region (4) and thedrain region (6) are located on the upper surface of the SOI substrate; the gate region (5) is located on the upper side of the channel region (4); the source region (3) is made of a germanium semiconductor material, the gate region (5) is of a hetero-gate dielectric structure, a high-k dielectric material is adopted on one side close to the source region, and a low-k dielectric material is adopted on one side close to the drain region; a space S is formed between the drain region (6) and the right margin of the gate region (5). The optimized L-type tunneling field effect transistor can effectively inhibit the bipolar effect, increases drive current and can be applied to manufacture of large-scale integrated circuits.

The embodiment of the invention relates to a fullerene carboxylic derivative modified photocatalyst / super-hydrophobic membrane composite material. The fullerene carboxylic derivative modified photocatalyst / super-hydrophobic membrane composite material comprises a super-hydrophobic membrane, the surface of the super-hydrophobic membrane is covered with a fullerene carboxylic derivative modified photocatalyst, the fullerene carboxylic derivative modified photocatalyst is prepared from at least one of a photocatalyst and a photocatalyst precursor and fullerene carboxylic derivatives. The composite material is novel in structure, excellent in performance and low in electron-hole recombination probability when adopted as the photocatalyst.

The invention discloses a silver oxide tungsten bronze composite heat-insulating material with high visible light photocatalytic performance and a preparation method thereof. The silver oxide-tungsten-bronze composite heat-insulating material is formed by silver oxide and tungsten bronze: the silver oxide-coated potassium-tungsten bronze; under the condition of visible light, rhodamine B solutionwith a concentration of 20mg / L was used, and the degradation rate of rhodamine B is over 95% within 30 minutes of visible light irradiation. In the preparation method, the tungsten bronze nano powderis dispersed in the deionized water, and the dispersion liquid A is obtained by ultrasonic dispersion; the silver nitrate is added into the dispersion A, the ultrasonic treatment is carried out underthe dark condition, and then the tungsten bronze and the silver nitrate solution are fully mixed under the dark condition to obtain the dispersion liquid B; alkaline solution is added into the dispersion liquid B, the pH value is controlled, reaction is continuously carried out after the completion of the dropping, then washing, centrifuging and drying are carried out orderly. The material has good transparency, near-infrared shielding performance and heat insulation performance while remarkably improving the utilization efficiency of visible light.

The invention discloses a high-stability formamidine perovskite material, and a preparation method and application thereof. The preparation method comprises the following steps: 1, mixing a divalent metal halide, formamidine hydrohaloride and a specific additive, and dissolving the mixture in a high-polarity solution to obtain a precursor solution; and 2, preparing the precursor solution into a thin film by using a spin coating, blade coating or spray coating process, removing the high-polarity solution by using heating or anti-solvent washing, and heating the thin film at 150 DEG C to obtainthe formamidine perovskite material. The formamidine perovskite material prepared by the invention has good phase stability, narrow band gap width and good illumination operation stability.

The invention relates to a graphene-CuInS2 nano composite photocatalyst, A preparation method of the graphene-CuInS2 nano composite photocatalyst is characterized by comprising the following steps offirstly preparing graphene oxide (GO) by using an improved Hummers method, and dispersing the GO into an organic solvent; dissolving an inorganic cuprous salt, an inorganic indium salt and a sulfur source in an organic solution; meanwhile, adding an already well prepared GO organic solution; reacting through a one-step solvothermal method; fixing a nano CuInS2 thin film on an atomic-scale-thickness graphene (rGO (Reduced GO)) thin film (rGO-CuInS2) with a chemical bond. When the content of the graphene is 0.1 to 10 percent, the rGO-CuInS2 nano composite photocatalyst has a unique surface structure, is larger in specific surface area, narrow in forbidden band width, high in stability, good in renewability and high in visible-light catalytic activity, can be used for efficiently treating actual medicinal wastewater and has the COD (Chemical Oxygen Demand) removal rate which can reach 86.5 percent.

The invention relates to a preparation method and a photocatalytic application of a polyacid-based cobalt metal-organic hybrid material, and also relates to the polyacid-based cobalt metal-organic hybrid material. The purpose of the present invention is to solve the problem of zero or low hydrogen yield of existing photocatalytic hydrogen production materials synthesized in the prior art, caused by wide forbidden bandwidth, easy photogenerated electron-hole recombination and difficult proton reduction surface reaction of the existing photocatalytic hydrogen production materials. The polyacid-based cobalt metal-organic hybrid material with a chemical formula (H2SiW12O40)[Co(pzta)3]2.4H2O is designed and developed in the invention. The synthesis method comprises the following steps: dissolving silicotungstic acid, cobalt chloride and an organic ligand 5-(2-pyrazinyl)-1,2,4-triazole in deionized water, adjusting the pH value of the obtained solution to 2.0, and carrying out a reaction ata temperature of 160 DEG C for 3 days to obtain the polyacid-based cobalt metal-organic hybrid material.

The invention relates to the field of environment functional materials and specifically relates to a visible-light response MoS2 / GO / g-C3N4 ternary composite photocatalytic material and a preparation method thereof. The ternary composite photocatalytic material is prepared by compounding MoS2, GO and g-C3N4; and MoS2 is uniformly loaded on GO in a nanoparticle way and forms the ternary composite photocatalytic material with a compact structure under the pi-pi conjugate action of GO and g-C3N4. Shown by photocatalytic degradation performance tests, the MoS2 / GO / g-C3N4 ternary composite photocatalytic material provided by the invention has better RhB photocatalytic degradation performance than an MoS2 / g-C3N4 monomer and an MoS2 / GO binary composite catalyst and has a good application prospect and economic benefit on the aspect such as solar energy conversion and sewage treatment.

The invention discloses a synthesis method of a graphene / ZnS-MoS2 nano solid solution photocatalyst having visible light catalytic activity. The method includes steps of: preparing graphene oxide (GO)through an improved Hummers method, then dispersing the GO in organic solvent and performing ultrasonic treatment to form a homogenous solution; with inorganic zinc salt, inorganic molybdenum salt and sulfur source as raw materials, successively dissolving the raw materials in an organic solution, and adding the graphene solution prepared before; performing a reaction at 180-220 DEG C so that thenano solid solution ZnS-MoS2 is uniformly adhered to the graphene thin film to form the rGO ZnS-MoS2 nano solid solution photocatalyst combined with chemical bonds. The photocatalyst, when the content of graphene is 5-14%, has excellent visible light catalytic performance. The photocatalyst has large specific surface area, narrow and continuously-adjustable energy gap, can effectively promote separation and migration of photo-induced electron-hole, and has excellent photo-absorption and photo-catalytic activity under visible light.

The invention discloses a titanium dioxide / graphene / molecularly imprinted composite material and a preparation method and application thereof. According to the composite material, bisphenol A serves as template molecules, a titanium dioxide / graphene composite material serves as an imprinting carrier, o-phenylenediamine serves as functional monomers, a polymerization reaction is carried out under photo-initiation, a molecularly imprinted polymer is formed, and the titanium dioxide / graphene / molecularly imprinted composite material is prepared after the template molecules in the molecularly imprinted polymer are washed out. The titanium dioxide / graphene / molecularly imprinted composite material has a small energy gap, high visible light region light absorption intensity, higher affinity and recognition capacity and higher catalytic capacity, can be widely used for removing bisphenol A in water, can selectively adsorb and efficiently and catalytically degrade the target pollutant bisphenol A, has the advantages of being easy and convenient to operate, high in treatment efficiency, wide in application range, free of toxic effects on the environment and the like, and has wide application prospects in the field of treatment of environmental pollution.

The invention relates to a preparation method of a microspheric ZnO-BiOI composite material. The preparation method comprises the following steps: S1: pre-treating ZnO at 450 to 550 DEG C, and takingout and cooling the ZnO; S2: dispersing the ZnO treated in Step S1 together with dihydrogen phosphate into an aqueous solution of ethanol, stirring and boiling the solution and performing refluxing for 5 to 8 h to obtain phosphorus-doped ZnO; S3: suspending the phosphorus-doped ZnO in a dispersing agent to obtain a dispersion system A, respectively dissolving water or alcohol-soluble trivalent phosphonium salt and iodized salt in a dispersing agent to obtain a dispersion system B and a dispersion system C respectively; S4: synchronously and continuously dropwise adding the dispersion systems Band C into the dispersion system A, and then transferring the systems into a reaction kettle having the temperature of 75 to 85 DEG C for stirring and reaction for 2 to 5 h, and standing the mixtureafter the reaction is ended; and performing separation, precipitation, washing, drying and grinding to obtain the microspheric ZnO-BiOI composite material. The method disclosed by the invention is simple and environmentally friendly, and the prepared ZnO-BiOI composite material has good regularity and high crystallinity, has an average particle diameter of about 3 mum, a relatively large specificsurface area, a relatively narrow band gap and relatively high photocatalytic activity, and is excellent in photocatalytic performance of photocatalytic degradation of organic pollutants, in particularly benzidine.

The invention discloses a bismuth vanadate / silver chromate heterojunction photocatalyst as well as a preparation method and application thereof. The heterojunction photocatalyst is formed by assembling BiVO4 and nano Ag2CrO4 selectively deposited on the crystal face of the BiVO4 (040), the BiVO4 is of a chamfered square bipyramid microstructure, and the mass of the BiVO4 accounts for 70%-80% of the total mass of the heterojunction photocatalyst. The preparation method comprises the following steps: S1, preparing bismuth vanadate by a hydrothermal method; S2, preparing the heterojunction photocatalyst, wherein adding BiVO4 into distilled water, carrying out ultrasonic dispersion, adding a certain amount of AgNO3 solution under the condition of magnetic stirring, slowly dropwise adding a certain amount of K2CrO4 solution to generate a brick red precipitate, continuously stirring to react for 1-2 hours, standing, precipitating, aging for 12-24 hours, centrifuging, washing with water for 6times, and carrying out vacuum drying. Compared with a traditional deposition method, the heterojunction formed by the selective adsorption deposition method is better in stability, higher in interface bonding degree and higher in visible light catalytic activity.

The invention discloses a method for removing antibiotics from a water body by using a copper sulfide / bismuth vanadate heterojunction photocatalyst. The method treats the antibiotics in the water bodyby using the copper sulfide / bismuth vanadate heterojunction photocatalyst, wherein the copper sulfide / bismuth vanadate heterojunction photocatalyst comprises copper sulfide and bismuth vanadate, andthe copper sulfide is attached to the bismuth vanadate. The method can be carried out at normal temperature under normal pressure, can mineralize the antibiotics (such as ciprofloxacin) into water andcarbon dioxide, can effectively perform solid-liquid separation without secondary pollution, has the advantages of simple operation, no need for large equipment, low cost, wide application range, high treatment efficiency, good treatment effect, strong reusability and environmental friendliness, can efficiently degrade the antibiotics in the water body, and has good application value and application prospect.

The invention provides a Co0.8Ni0.2TaO6 photocatalyst with a visible light response. The microstructure of the photocatalyst is porous micro / nano spheres of which the particle sizes are 5-10nm; and the diameters of the porous micro / nano spheres are 0.5-2 microns. The photocatalyst is prepared through sol-gel reaction, spray drying and burning of tantalum chloride, nickel acetate and cobalt nitrate as main reaction materials according to the stoichiometric ratio of a nickel element, a cobalt element and a tantalum element in the Co0.8Ni0.2TaO6. The preparation method is simple in preparation process, relatively low in cost, low in energy consumption; and the prepared photocatalyst has a good catalytic effect, has relatively high catalytic water decomposition efficiency under visible light radiation, and has potential application prospect in the field of hydrogen production from photocatalytic water splitting and water treatment.