The invention provides a thin-film
transistor, a manufacturing method of the thin-film
transistor, an array substrate and a
display device. The manufacturing method of the thin-film
transistor comprises the steps that a grid, a
gate insulator, an active area, a source and a drain are formed on the substrate, the active area is made of a ZnON material, and
nitrogen ions are implanted in the active area while the active area is formed, so that the
subthreshold swing of the thin-film transistor is smaller than or equal to 0.5 mV / dec. According to the manufacturing method, as the
nitrogen ions are implanted in the active area while the active area is formed, the concentration of the
nitrogen ions, at the effective
electricity conducting position, in the active area can be greatly improved, when the thin-film transistor works, nitrogen, lost due to the
diffusion effect, in the active area can be supplemented sufficiently, the migration rate of nitrogen vacancy in the active area can be greatly increased, namely, the migration rate of current carriers in the active area is greatly increased, the
subthreshold swing of the thin-film transistor is further reduced, and the semi-conductor property of the thin-film transistor is improved.