A reconfigurable field effect transistor with asymmetric structure

Abstract

The invention discloses a reconfigurable field effect transistor with an asymmetric structure, comprises a source electrode and a drain electrode arranged on both ends of the channel, and a field effect transistor composed of a control gate electrode and a polar gate electrode respectively arranged on one side of the source electrode and the drain electrode. The polar gate electrode is provided with an underoverlapped region of a deposition side wall on the side close to the drain electrode to form a reconfigurable field effect transistor with an asymmetric structure. Compared with the prior art, the device of the invention has ideal on-state, off-state current, larger current switching ratio, steep subthreshold swing and the like. The current switching ratio is improved significantly whenthe device is of an n-FET structure compared with a p-FET structure, and the off-state current is almost the same compared with a symmetric reconfigurable transistor, so the leakage current is controlled effectively.

Description

technical field [0001] The invention relates to the technical field of transistor logic devices, in particular to a reconfigurable field effect transistor with an asymmetric structure for CMOS ultra-large integrated circuits. Background technique [0002] As device dimensions continue to shrink, their physical limits may be reached within the next decade, so new ways to enhance device functionality are required while keeping device dimensions constant. Device-level reconfigurability promises more complex circuits with lower device counts. In the past few years, several novel structures have been proposed to achieve device reconfigurability, in these reconfigurable field effect transistors (RFETs), by applying different voltage biases to the dual gates, Adjust the polarity of the device channel carrier to realize the rotation of n-type device and p-type device. When the control gate voltage (VG1) is swept from negative to positive and the drain and polarity gate (G2) are he...

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Problems solved by technology

However, due to the existence of "underlap" at both ends of the device, the on-state current of the device is also weakened to a certain extent, so how to keep the off-state current of the device small enough, increase the on-state current of the device, and increase the current switching ratio of the device are urgently needed to be solved. The problem

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