116results about How to "Smooth interface" patented technology

A laser diode, grown on a miscut nonpolar or semipolar substrate, with lower threshold current density and longer stimulated emission wavelength, compared to conventional laser diode structures, wherein the laser diode's (1) n-type layers are grown in a nitrogen carrier gas, (2) quantum well layers and barrier layers are grown at a slower growth rate as compared to other device layers (enabling growth of the p-type layers at higher temperature), (3) high Al content electron blocking layer enables growth of layers above the active region at a higher temperature, and (4) asymmetric AlGaN SPSLS allowed growth of high Al containing p-AlGaN layers. Various other techniques were used to improve the conductivity of the p-type layers and minimize the contact resistance of the contact layer.

A system and method for representing, storing and retrieving real-world knowledge on a computer or network of computers is disclosed. Knowledge is broken down into permanent atomic “facts” which can be stored in a standard relational database and processed very efficiently. It also provides for the efficient querying of a knowledge base, efficient inference of new knowledge and translation into and out of natural language. Queries can also be processed with full natural language explanations of where the answers came from. The method can also be used in a distributed fashion enabling the system to be a large network of computers and the technology can be integrated into a web browser adding to the browser's functionality.

A light emitting diode (LED) device is provided. The LED device includes a device substrate, a first doped layer of a first conductivity type, a light emitting layer, a second doped layer of a second conductivity type, a transparent conductive oxide layer, a reflecting layer and two electrodes. The first doped layer is deposited on the device substrate, the light emitting layer is deposited on a portion of the first doped layer, and the second doped layer is deposited on the light emitting layer. The first and the second doped layers are comprised of III-V semiconductor material respectively. The transparent conductive oxide layer is deposited on the second doped layer, and the reflecting layer is deposited on the transparent conductive oxide layer. The two electrodes are deposited on the reflecting layer and the first doped layer respectively.

A delivery system including a restraining member maintains a collapsed implant in its collapsed state for delivery through a small passageway to a desired site in a mammalian body. Once the implant is positioned at the desired site, the restraining member is released so that the stent may expand or be expanded to its expanded state. In a preferred embodiment, the restraining member comprises a sheet of material that surrounds at least a portion of the collapsed stent. Portions of the restraining member are releasably coupled to one another with a low profile thread-like member or suture.

A light emitting diode (LED) device is provided. The LED device includes a device substrate, a first doped layer of a first conductivity type, a light emitting layer, a second doped layer of a second conductivity type, a transparent conductive oxide layer, a reflecting layer and two electrodes. The first doped layer is deposited on the device substrate, the light emitting layer is deposited on a portion of the first doped layer, and the second doped layer is deposited on the light emitting layer. The first and the second doped layers are comprised of III-V semiconductor material respectively. The transparent conductive oxide layer is deposited on the second doped layer, and the reflecting layer is deposited on the transparent conductive oxide layer. The two electrodes are deposited on the reflecting layer and the first doped layer respectively.

Methods for treating anatomic tissue defects such as a patent foramen ovale generally involve positioning a distal end of a catheter device at the site of the defect, exposing a housing and energy transmission member from the distal end of the catheter, engaging the housing with tissues at the site of the defect, applying suction or other approximating tool to the tissue via the housing to bring the tissue together, and applying energy to the tissue with the energy transmission member or to deliver a clip or fixation device to substantially close the defect. Apparatus generally include a catheter body, a housing extending from a distal end of the catheter body for engaging tissue at the site of the defect, and further adapted to house a fusing or fixation device such as an energy transmission member adjacent a distal end of the housing, or a clip or fixation delivery element.

A low impact foundation system requiring little or no excavation, and allowing for the preservation of the soil and drainage characteristics of the site upon which it is erected. The system utilizes small obliquely driven piles in combination with a pre-cast component designed to engage a standard foundation wall.

In an interface unit, an input section obtains an input signal of user's speech or the like and an input processing section processes the input signal and detects information relating to the user. On the basis of the detection result, a response contents determination section determines response contents to the user. While, a response manner adjusting section adjusts a response manner to the user, such as speech speed and the like, on the basis of the processing state of the input signal, the information relating to the user detected from the input signal, and the like.

Disclosed are a silicon carbide particle reinforcement aluminum-based composite for a train brake disc and a preparation method. The composite includes the following components of, by mass percentage, 15-25% of SiC particles, 18-24% of Si, 0.6-3.5% of Mg, 0.15-0.35% of Zr, 0.12-0.45% of Sc, and the balance Al and unavoidable impurities. According to the preparation method, SiC, Mg, Si, Zr and Sc with the particle size being 10-15 [mu]m are added into molten aluminum in the form of intermediate alloy, SiC with the particle size being 15-25 [mu]m is added into the molten aluminum in the form of particles, and thus the silicon carbide particle reinforcement aluminum-based composite is obtained. The SiC thin particles are added in the form of Mg-SiC, so that the problems of uniform dispersing difficulty of silicon carbide particles in a matrix and poor interface bonding are effectively solved, the particle reinforcement effect is fully played, and the toughness of alloy is improved. Meanwhile, transitional element zirconium and rare earth element scandium are added to replace titanium fine grains, the roughness and heat resistance of the aluminum-based composite are remarkably improved, and occurrence of heat fatigue cracks is restrained. In addition, the added rare earth scandium has a good modification effect on the interfacial compatibility of the silicon carbide particles and aluminum alloy.

A lens assembly includes at least a pair of lenses fixed in a lens barrel and an additional lens initially having at least one degree of freedom of movement with respect to the other lenses. The additional lens can be fixed in a desired alignment position with respect to the other lenses.

A strapping machine configured to feed a strapping material around a load, position, tension and seal the strapping material around the load, includes a chute opening system to open a lower portion of the strap chute upon upwardly pivoting a portion of the work surface. Such a machine includes a machine frame, a work surface for supporting the load in the strapping machine, at least a portion of which is upwardly pivotal. A strap chute carries the strapping material around the load and releases the strapping material from the strap chute. The strap chute defines a strap path along the chute. The chute is movable between an operating position in which the strapping material is conveyed along the chute and a release position in which the strap chute is moved longitudinally to release the strapping material from the chute for positioning around the load. A weld head seals the strapping material onto itself. At least a portion of the weld head is disposed along the strap path below the work surface. The chute opening system is operably connected to the chute and is engageable with the upwardly pivotal portion of the work surface. The chute opening system includes a contact arm for engaging a lower surface of the work surface. The contact arm is operably connected to the chute such that upward pivoting of the work surface moves the chute from the operating position to the release position.

An operating instrument includes a housing, a chassis, a first and second drive shaft, a gear assembly, a switch assembly, and a bearing lock assembly. The first and second drive shafts each has a first portion supported by the chassis in the housing and a second portion extending out of the housing. The gear assembly includes a first gear member fixedly received on the first portion of the first drive shaft and a second gear member slidably received on the first portion of the second drive shaft. The switch assembly is operable to place the second gear member into engagement with the first gear member thereby coupling the second drive shaft with the first drive shaft to provide a first operating mode wherein the second drive shaft is rotatable with the first drive shaft, or displace the second gear member out of engagement with the first gear member thereby decoupling the second drive shaft from the first drive shaft to provide a second operating mode wherein the second drive shaft is non-rotatable with the first drive shaft. The bearing lock assembly is operable to lock the first and second drive shafts to the chassis whereby the first and second drive shafts are restricted from sliding out of the housing and are capable of freely rotating or unlock the first and second drive shafts from the chassis to allow the first and second drive shafts to slide out of the housing.

Semi-conductive or insulating compositions including an ethylene / octane or butene copolymer and at least one additional polymer, such LDPE, are described. The compositions may also include carbon black and other additives. The composition may be used as a semi-conductive layer in such applications as electrical cables

The invention relates to a multiple-quantum well waveguide butt-coupling method comprising the following steps of: A, carrying out primary epitaxy on a substrate to obtain a multiple-quantum well structure; B, after a dielectric film is deposited, carrying out mask photoetching, and removing a waveguide part of a first region requiring secondary epitaxy by using a three-step etching method; C, placing an epitaxial wafer into metal organic chemical vapor deposition equipment for high-temperature treatment; and D, carrying out secondary epitaxial growth to obtain a second multiple-quantum well structure. By using the method, an attractive interface etching appearance can be achieved, cavities caused during growth can be avoided, the butting quality can be effectively improved, the coupling loss can be reduced, and good repeatability can be obtained. The multiple-quantum well waveguide butt-coupling method can be used for manufacture and batch production of various photoelectronic integrated chips.

The present invention discloses a method for fabricating a bottom-gate low-temperature polysilicon thin film transistor, wherein the bottom gate structure is used to form an amorphous silicon layer with varied thicknesses; the amorphous silicon layer in the step region on the border of the bottom gate structure is partially melted by an appropriate amount of laser energy; the partially-melted amorphous silicon layer in the step region functions as crystal seeds and makes crystal grains grow toward the channel region where the amorphous silicon layer is fully melted, and the crystal grains are thus controlled to grow along the lateral direction to form a lateral-grain growth low-temperature polysilicon thin film. The lateral grain growth can reduce the number of the grain boundaries carriers have to pass through. Thus, the present invention can promote the carrier mobility in the active region and the electric performance. Further, the present invention can achieve a superior element motive force and a steeper subthreshold swing.

Semi-conductive or insulating compositions including an ethylene / octane or butene copolymer and at least one additional polymer, such LDPE, are described. The compositions may also include carbon black and other additives. The composition may be used as a semi-conductive layer in such applications as electrical cables.

An intergrated optical device comprises a vertically lasing semiconductor optical amplifier (VLSOA) and an optical element integrated onto a common substrate. Example optical elements include waveguides, unguided transparent regions, and active optical devices (including additional VLSOAs). The integrated device may be fabricated using a number of different methods, including based on selective area epitaxy, impurity induced disordering, etch and fill and silicon optical bench.

A skate shoe is disclosed having a shoe sole, a shoe upper, and a protective cover over the shoe upper shoelaces to prevent premature wear and failure thereof, while offering a smooth sliding interface across the shoe upper for skating activities. The shoelace cover comprises an inner tongue and outer tongue sandwiching the shoelaces therebetween, while the shoe upper terminates above the outer tongue and a lateral strap secures over the assembly. The strap originates from the outside portion of the shoe upper and is secured along the shoe upper interior portion, offering an interface across the strap and the secured outer tongue enclosed within the shoe upper that is adept at sliding along a skateboard griptape without having discontinuities and exposing the shoelaces to contact with the skateboard. The inner and outer tongue pivot from the shoe throat line and secure at their distal ends when in use.

Provided is a conductive substrate which is prepared by forming a pattern-shaped metal fine particle sintered film such as a copper wiring and the like on a base material of polyimide and the like and which has a high adhesive property with the base material and is provided with an excellent conductivity.The conductive substrate of the present invention is prepared by printing a coating liquid containing metal or metal oxide fine particles on a base material to form a print layer and subjecting the above print layer to sintering treatment to form a metal fine particle sintered film, wherein a crystallite diameter in the metal fine particle sintered film which is measured by X ray diffraction is 25 nm or more, and a cross section of the metal fine particle sintered film has a void rate of 1% or less.

The present invention relates particularly to an oscillating grinding machine. The grinding machine comprises a driving motor (3) surrounded by a body (3), and a drive shaft (4) cooperating with the driving motor. The drive shaft comprises a grinding head (5) that constitutes a support for a grinding product (8). The drive shaft (4) is arranged in two pieces and comprises a main shaft (11) and an eccentric shaft (10) arranged rigidly thereto. The eccentric shaft comprises a centre line (12) that assumes an angle (α) against a corresponding centre line (13) of the main shaft, and thus the grinding head (5) will assume an eccentric placement in relation to the main shaft (11). Thus, the grinding head is arranged to oscillate in a substantially spherical plane provided by the rotation of the main shaft and the eccentricity and inclination of the eccentric shaft in relation to the main shaft.

The invention relates to a GaN-based high-electron-mobility transistor and a manufacturing method thereof, wherein a transistor structure comprises an aluminum nitrogen buffer layer grown on a substrate, a high-resistance GaN layer grown on the aluminium nitrogen buffer layer, and a high-mobility GaN channel layer grown on the high-resistance GaN layer. The transistor is characterized in that an indium nitrogen insert layer is grown on the high-mobility GaN channel layer, and an aluminum nitrogen insert layer is grown on the indium nitrogen insert layer; and an unintentional adulteration aluminium gallium nitrogen layer is grown on the aluminium nitrogen insert layer, and the aluminium nitrogen insert layer and the unintentional adulteration aluminium gallium nitrogen layer form a barrier layer together. According to the invention, the indium nitrogen insert layer is utilized to effectively reduce alloy scattering, increase the electron mobility and electron concentration of the high electron mobility transistor and improve the stability and reliability of a transistor device.

An aerofoil has a body, and at least one flow control device, the flow control device including a passage within the body of the aerofoil, and a passage outlet at an upper aerofoil surface of the aerofoil, whereby in use, air from the passage passes through the passage outlet to affect airflow over the upper surface of the aerofoil over at least a range of incidence angles, wherein the passage outlet is provided by an outlet fitting which is secured relative to the upper surface of the aerofoil, the outlet fitting including a surface part which lies contiguously with the surrounding upper aerofoil surface so there is no or only a minimal discontinuity where the surface part and the surrounding upper aerofoil surface interface, the surface part of the fitting further including an opening which communicates with the passage within the body of the aerofoil.

An aerofoil has a body, and at least one flow control device, the flow control device including a passage within the body of the aerofoil, and a passage outlet at an upper aerofoil surface of the aerofoil, whereby in use, air from the passage passes through the passage outlet to affect airflow over the upper surface of the aerofoil over at least a range of incidence angles, wherein the passage outlet is provided by an outlet fitting which is secured relative to the upper surface of the aerofoil, the outlet fitting including a surface part which lies contiguously with the surrounding upper aerofoil surface so there is no or only a minimal discontinuity where the surface part and the surrounding upper aerofoil surface interface, the surface part of the fitting further including an opening which communicates with the passage within the body of the aerofoil.

A delivery system including a restraining member maintains a collapsed implant in its collapsed state for delivery through a small passageway to a desired site in a mammalian body. Once the implant is positioned at the desired site, the restraining member is released so that the stent may expand or be expanded to its expanded state. In a preferred embodiment, the restraining member comprises a sheet of material that surrounds at least a portion of the collapsed stent. Portions of the restraining member are releasably coupled to one another with a low profile thread-like member or suture.

The invention provides a method for preparing a silicon nitride-based sealing coating, which comprises the steps: at first, sufficiently ball milling and mixing silicon nitride, magnesium oxide, alumina and silicon nitride powder with polyvinyl alcohol, sodium tripolyphosphate and water according to the proportion so as to prepare silicon nitride-based slurry, coating the slurry on the surface of a silicon nitride-based porous ceramic matrix according to a method for spray coating at normal temperature in order to result in a green body, after drying the green body at normal temperature for 12-24 hours, implementing binder removal on the green body at 200 DEG C to 400 DEG C and then carrying out heat presevation for 5-24 hours, and obtaining the compact silicon nitride-based sealing coating by sintering the binder-removed green body in the nitrogen-protective atmosphere at normal pressure at 1400 DEG C to 1700 DEG C and by carrying out heat preservation for 1-5 hours. The method has simple process, low cost of raw materials and process and good repeatability, and the prepared silicon nitride-based sealing coating has uniform and controllable thickness, compact structure, no micro-crack and good bonding with the silicon nitride-based porous ceramic matrix.

The invention relates to a magnetic field detector based on perpendicular exchange coupling and preparing and use methods of the magnetic field detector. The preparing method of the magnetic field detector comprises the following steps that a magnetron sputtering or electronic beam evaporation method is adopted, so that a bottom electrode, a ferromagnetic layer, a non-magnetic layer and a top electrode are sequentially deposited on a substrate, and a multilayer film structure is obtained; an ultraviolet exposure process and an argon ion etching process are adopted, so that the obtained multilayer film structure is processed into a cross-shaped structure. The prepared magnetic field detector comprises the substrate, the bottom electrode, the ferromagnetic layer, the non-magnetic layer and the top electrode, the substrate is of the cross-shaped structure, and the bottom electrode, the ferromagnetic layer, the non-magnetic layer and the top electrode are sequentially deposited on the substrate and matched with the substrate in shape; the ferromagnetic layer is composed of a perpendicular magnetization film, the non-magnetic layer is composed of an anti-ferromagnetic layer or an oxide layer, and the bottom electrode and the top electrode are both Pt electrodes. The magnetic field detector can be widely applied to the process of magnetic field detection.

The invention discloses an electric field regulating antiferromagnetic base Hall device and a preparation method thereof. The electric field regulating antiferromagnetic base Hall device comprises a bottom layer, an antiferromagnetic coupling layer and a top layer deposited on a conductive substrate in sequence, and the top layer is provided with a side electrode and a gate electrode in sequence; the bottom layer is a magnetic insulator layer or a nonmagnetic insulator layer; the bottom layer is a composite layer composed of the magnetic insulator layer or nonmagnetic insulator layer; the antiferromagnetic coupling layer is an antiferromagnetic layer or composed of the antiferromagnetic layer and a ferromagnetic layer; the top layer is a hafnium oxide layer, an aluminum oxide layer or a silicon dioxide layer; the side electrode is a double-layer film composed of a Ti layer and an Au layer or a double-layer film composed of a Ti layer and a Pt layer, and the Ti layer, Au layer or Ti layer and Pt layer are arranged on the top layer in sequence; the gate electrode is ion liquid. The electric field regulating antiferromagnetic base Hall device is simple in structure, easy to prepare, low in cost and good in magnetization characteristic, and the electric field regulating antiferromagnetic base Hall device can serve as a magnetic field detector; the electric field regulating antiferromagnetic base Hall device is nonsensitive to external magnetic field and thermal disturbance, and the measured Hall resistance is more precise; the electric field regulating antiferromagnetic base Hall device is a low-energy consumption spinning device, and the electric field regulating antiferromagnetic base Hall device is significant for the development of antiferromagnetic spinning electronic devices.

The invention provides a method utilizing a controllable defective graphene insertion layer to prepare metal-semiconductor alloy. The method comprises steps that 1), a semiconductor substrate is provided; 2), graphene is formed don a surface of the semiconductor substrate; 3), ion injection into the graphene is carried out to acquire density-controllable defective graphene; 4), a metal layer is formed on the surface of the defective graphene; and 5), annealing processing for the structure acquired in the step 4) is carried out to form the metal-semiconductor alloy. Through forming the graphene insertion layer between the semiconductor substrate and the metal layer, contact characteristics of an interface of the semiconductor substrate and the metal-semiconductor alloy can be effectively improved, the metal-semiconductor alloy acquired through epitaxial growth has better quality and more stable performance, the graphene insertion layer has relatively high electron mobility, resistance of the metal-semiconductor alloy layer acquired through epitaxial growth and contact resistance of the semiconductor substrate and the metal-semiconductor alloy layer can be effectively reduced, and thereby electrical performance is improved.

A hose assembly including an elongated flexible metal hose attached to a hose fitting having a fitting body defining a passageway for conveying material. The fitting body has a mating portion for connecting the hose assembly to a corresponding fitting which delivers or accepts material passing through the hose assembly. A sleeve engages a surface of the fitting body and secures an end portion of the metal conduit to the fitting by trapping the end portion of the metal conduit between the sleeve and the fitting body. During installation, the sleeve is inserted into the body and subsequently the hose is inserted into a gap between the sleeve and fitting body. A fixture having a radially expanding member is slipped into the sleeve and brought into contact with the sleeve to deform the sleeve and consequently trap an end of the hose between the sleeve and the fitting.