288results about How to "Contact resistance" patented technology

An access port device is provided which enables hand access to a patient's body cavity while retaining pneumoperitoneum by minimizing gas leakage through the access port device. In one embodiment, the access port device includes first and second sleeves forming an inflatable chamber and a third sleeve mounted within the second sleeve including an elastic band for sealingly engaging a hand or wrist. The access port device may also include an exit opening seal for positioning within the patient's body cavity and a second sleeve retraction prevention device for preventing inadvertent movement of the second sleeve outwardly from the patient's body cavity through the incision. In another embodiment, an access port device provided which includes an inner annular sealing device and a non-adhesive outer annular sealing device for creating a non-adhesive seal against the outer surface of a patient. An access component forming an inflatable chamber and including an integral sleeved glove may also be provided. In another embodiment, a sealing force applying feature includes a biasing surface formed on a generally flat annular extension and exposed to gas pressure in an adjacent gas chamber positioned to receive leakage gas leakage between the access port device an the patient to create sealing forces which tend to enhance the seal between the flexible annular extension and patient's skin.

It is an object to reduce characteristic variation among transistors and reduce contact resistance between an oxide semiconductor layer and a source electrode layer and a drain electrode layer, in a transistor where the oxide semiconductor layer is used as a channel layer. In a transistor where an oxide semiconductor is used as a channel layer, at least an amorphous structure is included in a region of an oxide semiconductor layer between a source electrode layer and a drain electrode layer, where a channel is to be formed, and a crystal structure is included in a region of the oxide semiconductor layer which is electrically connected to an external portion such as the source electrode layer and the drain electrode layer.

In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film and the first electrode is constructed so that at least a part of alloy components constituting the aluminum alloy film exist as a precipitate or concentrated layer. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows elimination of a barrier metal in such an electronic device, and manufacturing technology therefor.

A semiconductor device including thin film transistors having high electrical properties and reliability is proposed. Further, a method for manufacturing the semiconductor devices with mass productivity is proposed. The semiconductor device includes a thin film transistor which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, a source electrode layer and a drain electrode layer over the gate insulating layer, a buffer layer over the source electrode layer and the drain electrode layer, and a semiconductor layer over the buffer layer. A part of the semiconductor layer overlapping with the gate electrode layer is over and in contact with the gate insulating layer and is provided between the source electrode layer and the drain electrode layer. The semiconductor layer is an oxide semiconductor layer containing indium, gallium, and zinc. The buffer layer contains a metal oxide having n-type conductivity. The semiconductor layer and the source and drain electrode layers are electrically connected to each other through the buffer layer.

With a recent shrinking semiconductor process, insulating layers formed between interconnect layers are becoming thin. To avoid parasitic capacitance between them, materials of a low dielectric constant have been used for an insulating layer in a multilevel interconnect. Low-k materials, however, have low strength compared with the conventional insulating layers. Porous low-k materials are structurally fragile. The invention therefore provides a manufacturing method of a semiconductor device having a multilevel interconnect layer including a low-k layer. According to the method, in a two-step cutting system dicing in which after formation of a groove in a semiconductor water with a tapered blade, the groove is divided with a straight blade thinner than the groove width, the multilevel interconnect layer portion is cut while being covered with a tapered face and then the wafer is separated with a thin blade which is not brought into contact with the multilevel interconnect layer portion. The wafer can be diced without damaging a relatively fragile low-k layer.

A thin film transistor (TFT) includes an N-type oxide semiconductor layer on a substrate, a gate electrode spaced apart from the N-type oxide semiconductor layer by a gate dielectric layer, a source electrode contacting a first portion of the N-type oxide semiconductor layer, and a drain electrode contacting a second portion of the N-type oxide semiconductor layer. The first and second portions each have a doped region containing ions of at least one Group 1 element, and the ions of the at least one Group 1 element in the doped region may have a work function that is less than that of an N-type oxide semiconductor material included in the semiconductor layer.

A thin film transistor (TFT) including a gate electrode, an active layer, and source and drain electrodes. The active layer includes contact regions that contact the source and drain electrodes, which are thinner than a remaining region of the active layer. The contact regions reduce the contact resistance between the active material layer and the source and drain electrodes.

An implantable prosthesis and a system and method for repairing, or resisting the formation of, a hernia at an opening or stoma through an anatomical structure such as the abdominal wall. The implantable prosthesis includes a body portion and an opening therethrough, that is adapted to receive an element, such as a section of bowel, that is being externalized through the anatomical structure. The system includes the implantable prosthesis and a cannula having an outer dimension sized to fit within the opening in said implantable prosthesis, and an inner dimension sized to pass through the element. The implantable prosthesis may include a reinforcement member, and it may also include flaps that extend into the opening of the implantable prosthesis. The method includes inserting the cannula into and beyond the opening or stoma, and locating the opening of the prosthesis about the end of the cannula. A portion of the element to be externalized, such as a section of bowel in an enterostomy, is drawn through the end of the cannula such that the bowel section does not contact the implantable prosthesis. The cannula is then removed.