Thin film transistor and method of fabricating the same

Abstract

A thin film transistor (TFT) including a gate electrode, an active layer, and source and drain electrodes. The active layer includes contact regions that contact the source and drain electrodes, which are thinner than a remaining region of the active layer. The contact regions reduce the contact resistance between the active material layer and the source and drain electrodes.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims the benefit of Korean Patent Application No. 2008-81772, filed on Aug. 21, 2008, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein, by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]Aspects of the present invention relate to a thin film transistor and a method of fabricating the same.[0004]2. Description of the Related Art[0005]Currently, thin film transistors (TFT) are widely used as switching devices and driving circuits, which control the operation of pixels in a display device, such as an organic light emitting display (OLED) or a liquid crystal display (LCD). Therefore, research into improving the characteristics of TFTs is currently being conducted.[0006]Contact resistance, which is generated by contact between an active layer and source and drain electrodes of a TFT, can degrade the performance of a TFT. High contact resistance can reduce th...

AI Technical Summary

Benefits of technology

The present invention provides a thin film transistor (TFT) with reduced contact resistance between electrodes and an active layer, and a method of fabricating the same. The TFT includes a gate electrode, an active layer, and source and drain electrodes. The active layer includes contact regions that contact the source and drain electrodes, and a remaining region that excludes the contact regions. The contact regions are thinner than the remaining region. The thickness of the contact regions can be from 10% to 90% of the thickness of the remaining region. The active layer can include an oxide semiconductor. The TFT can have a bottom gate structure. The source and drain electrodes can directly contact the contact region of the active layer. The TFT can further include an etch stop layer and an interface stabilizing layer. The method includes forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an active layer on the gate insulating layer, and forming source and drain electrodes on contact regions of the active layer. The contact regions are formed by patterning the active layer, such that the contact regions are thinner than a remaining region of the active layer. The active layer can include an oxide semiconductor, which improves the characteristics of the TFT. The contact regions have a smaller thickness than the remaining region, resulting in a TFT with improved performance.

Problems solved by technology

Contact resistance, which is generated by contact between an active layer and source and drain electrodes of a TFT, can degrade the performance of a TFT.

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