619results about How to "Increase contact resistance" patented technology

The invention discloses a metallic bipolar plate of a proton exchange membrane fuel cell and a single cell and an electric stack formed by the same. The metallic bipolar plate is a non-planar arc plate with certain curvature, and is formed by relatively combining a cathode monopolar plate and an anode monopolar plate which are made of metal sheets; cathode and anode cavities, cooling medium cavities, flow field area grooves and lug bosses of the two plates have mutual corresponding convex-concave shapes and form a fuel gas passage, an oxidant gas passage and a cooling medium passage respectively; and a membrane electrode and single bipolar plate can be combined into single fuel cell, and a plurality of single cells can be superposed and connected to form the electric stack. Compared with a common metallic bipolar plate, the bipolar plate has better mechanical property, is not easy to deform or dislocated after assembly, and has high stability; and because the contact between the bipolar plate and a diffusion layer of the membrane electrode is good, the internal resistance is low, the energy consumption is low, and the formed electric stack can provide higher output voltage and higher output power.

By using a non-conformal diffusion barrier in conjunction with a similarly deposited non-conformal initial deposition of siliciding material, a substantially uniform and conformal silicide can be formed in a 3D structure such as the fin of a FinFET. The siliciding material may be nickel (Ni), the diffusion barrier may be titanium (Ti) or titanium nitride (TiN). Generally, the diffusion barrier may be any material which will inhibit, but not block, diffusion of the siliciding material into the silicon. In this manner, a non-conformal barrier deposition, in conjunction with a non-conformal silicide material deposition, after anneal, results in substantially conformal silicide formation.

A method for fabricating a semiconductor device is disclosed. The method includes providing a substrate; forming at least one gate structure over the substrate; forming a plurality of doped regions in the substrate; forming an etch stop layer over the substrate; removing a first portion of the etch stop layer, wherein a second portion of the etch stop layer remains over the plurality of doped regions; forming a hard mask layer over the substrate; removing a first portion of the hard mask layer, wherein a second portion of the hard mask layer remains over the at least one gate structure; and forming a first contact through the second portion of the hard mask layer to the at least one gate structure, and a second contact through the second portion of the etch stop layer to the plurality of doped regions.

Provided are high-aspect ratio printable thick film metal paste compositions that can be deposited onto a substrate using, for example, screening printing techniques; and methods of preparing and using thick film printable metal pastes; and methods of screen printing of the thick film metal paste compositions onto a substrate to produce printed circuits, conductive lines or features on the substrate and / or a conductive surface on a solar cell device. Also provided are printed substrates containing an electronic feature produced by the high-aspect ratio printable thick film metal paste compositions.

The present invention discloses a method of manufacturing a super large wide-angle super high-speed response LCD apparatus by using a photolithographic process for three times. The invention adopts a halftone exposure technology and a nitrogen ion doped technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an alignment control electrode. A P-CVD apparatus is provided for forming a passivation layer into a film by using a masking deposition method, or an ink-jet coating method is used to coat a protective layer at a partial area, and a photolithographic process is performed for three times to manufacture a TFT matrix substrate of the super large wide-angle super high-speed response LCD.

A phenomenon of change of a contact resistance between an oxide semiconductor and a metal depending on an oxygen content ratio in introduced gas upon depositing an oxide semiconductor film made of indium gallium zinc oxide, zinc tin oxide, or others in an oxide semiconductor thin-film transistor. A contact layer is formed with an oxygen content ratio of 10% or higher in a region from a surface, where the metal and the oxide semiconductor are contacted, down to at least 3 nm deep in depth direction, and a region to be a main channel layer is further formed with an oxygen content ratio of 10% or lower, so that a multilayered structure is formed, and both of ohmic characteristics to the electrode metal and reliability such as the suppression of threshold potential shift are achieved.

An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.