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619results about How to "Increase contact resistance" patented technology

Graphene oxide, positive electrode for nonaqueous secondary battery using graphene oxide, method of manufacturing positive electrode for nonaqueous secondary battery, nonaqueous secondary battery, and electronic device

A graphene oxide used as a raw material of a conductive additive for forming an active material layer with high electron conductivity with a small amount of a conductive additive is provided. A positive electrode for a nonaqueous secondary battery using the graphene oxide as a conductive additive is provided. The graphene oxide is used as a raw material of a conductive additive in a positive electrode for a nonaqueous secondary battery and, in the graphene oxide, the weight ratio of oxygen to carbon is greater than or equal to 0.405.
Owner:SEMICON ENERGY LAB CO LTD

Method for making electrically conductive textiles and textile sensor

A method for making a textile sensor and a textile sensor can include selecting a combination of variables from the group consisting of yarn variables, stitch variables, and textile variables; and knitting an electrically conductive yarn in the textile sensor in accordance with the selected combination of variables, wherein the combination of variables is selected so as to provide a controlled amount of contact resistance in the textile sensor. The method and textile can further include a capacitive textile-sensor having at least two integrally knit capacitor plate elements and having a configuration adapted for a sensing activity. Resistance in the textile sensor can automatically calibrate to a stable baseline level after the textile sensor is applied to a body.
Owner:FOOTFALLS & HEARTBEATS (UK) LTD

Damascene interconnect structure with cap layer

A method of forming an integrated circuit interconnect structure is presented. A first conductive line is formed over a semiconductor substrate. A conductive cap layer is formed on the first conductive line to improve device reliability. An etch stop layer (ESL) is formed on the conductive cap layer. An inter-level dielectric (IMD) is formed on the ESL. A via opening and a trench are formed in the ESL, IMD, and conductive cap layer. A recess is formed in the first conductive line. The recess can be formed by over etching when the first dielectric is etched, or by a separate process such as argon sputtering. A second conductive line is formed filling the trench, opening and recess.
Owner:TAIWAN SEMICON MFG CO LTD

Method for manufacturing storage battery electrode, storage battery electrode, storage battery, and electronic device

To provide a method for forming a storage battery electrode including an active material layer with high density in which the proportion of conductive additive is low and the proportion of the active material is high. To provide a storage battery having a higher capacity per unit volume of an electrode with the use of a storage battery electrode formed by the formation method. A method for forming a storage battery electrode includes the steps of forming a mixture including an active material, graphene oxide, and a binder; providing a mixture over a current collector; and immersing the mixture provided over the current collector in a polar solvent containing a reducer, so that the graphene oxide is reduced.
Owner:SEMICON ENERGY LAB CO LTD

Liquid crystal display device and method of manufacturing the liquid crystal display device

The object of the invention is to suppress the increase of contact resistance between electrodes and restrain the reducing of pass percent in a liquid crystal display device that controls a liquid crystal using an electric field that is substantially horizontal with respect to a transparent substrate. A method of manufacturing the liquid crystal display device includes: forming a first etching stopper electrode (20P) connected to the drain electrode(16D) and a common electrode (20) connected to a leading-out line, which pass through openings (H8, H9) formed on a passivating film (17) and a plainness film (18) covering a switching element (TR); forming a insulating film (21) by covering the first etching stopper electrode and the common electrode; selectively etching the insulating film in a dry-type way; removing a residue on the first etching stopper electrode by etching in a wet-type way; forming a pixel electrode (22) that is connected to the first etching stopper electrode and that extends onto the second insulating film.
Owner:JAPAN DISPLAY INC

Electrode, electrochemical device, and method of making electrode

An electrode comprises a planar collector, and an active material containing layer disposed on the collector. The active material containing layer comprises a plurality of particles containing an active material, and a binder for binding the particles containing the active material to each other and the particles containing the active material to the collector. The collector has a surface depressed in conformity to a form of the particles containing the active material.
Owner:TDK CORPARATION

Vertical gate semiconductor device and method for fabricating the same

A first region 11 functioning as a transistor includes a drain region 111, a body region 112 formed over the drain region 111, a source region 113A formed over the body region 112 and a trench formed through the body region 112 and having a gate electrode 120 buried therein. A source region 113B is formed over the body region 112 extending in a second region 12.
Owner:PANASONIC SEMICON SOLUTIONS CO LTD

Positive electrode for nonaqueous secondary battery, method for forming the same, nonaqueous secondary battery, and electrical device

A positive electrode for a nonaqueous secondary battery including an active material layer which has sufficient electron conductivity with a low ratio of a conductive additive is provided. A positive electrode for a nonaqueous secondary battery including an active material layer which is highly filled with an active material, id est, including the active material and a low ratio of a conductive additive. The active material layer includes a plurality of particles of an active material with a layered rock salt structure, graphene that is in surface contact with the plurality of particles of the active material, and a binder.
Owner:SEMICON ENERGY LAB CO LTD
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