1599results about How to "Improve contact effect" patented technology

A phenomenon of change of a contact resistance between an oxide semiconductor and a metal depending on an oxygen content ratio in introduced gas upon depositing an oxide semiconductor film made of indium gallium zinc oxide, zinc tin oxide, or others in an oxide semiconductor thin-film transistor. A contact layer is formed with an oxygen content ratio of 10% or higher in a region from a surface, where the metal and the oxide semiconductor are contacted, down to at least 3 nm deep in depth direction, and a region to be a main channel layer is further formed with an oxygen content ratio of 10% or lower, so that a multilayered structure is formed, and both of ohmic characteristics to the electrode metal and reliability such as the suppression of threshold potential shift are achieved.

Water-based adhesive compositions are improved by the incorporation of hollow polymeric microspheres having outer surfaces coated with one or more barrier materials such as calcium carbonate particles. The adhesive compositions exhibit enhanced rheology, sprayability, drying time, tack and storage stability as compared to analogous adhesives that are not modified with coated hollow polymeric microspheres. Such compositions are useful as both contact adhesives as well as wet bonding one-way adhesives.

Example embodiments relate to a phase-change memory device and methods of fabricating the same. A phase-change memory device may include a lower electrode on a semiconductor substrate, a phase-change material layer on the lower electrode, a contact plug between the lower electrode and the phase-change material layer, wherein a first area of the contact plug in contact with a top of the lower electrode is greater than a second area of the contact plug in contact with a bottom of the phase-change material layer and an upper electrode on the phase-change material layer.

The present invention discloses an inorganic-organic nano composite solid electrolyte membrane and a preparation method and application thereof. The composite solid electrolyte is a novel inorganic-organic nanocomposite combining the respective advantages of inorganic ceramic solid electrolyte and organic polymer electrolyte and is composed of a negative electrode protective layer, a support layerand a positive electrode interface layer. The support layer plays a supporting role, and the main component of the negative electrode protective layer is the inorganic solid electrolyte with good mechanical properties, which can effectively inhibit the growth of lithium dendrite; and the positive electrode interface layer is mainly composed of organic polymer electrolyte with good flexibility, ensures good contact with active materials and provides a continuous ion transport channel. In the present invention, the composite solid electrolyte with good interface compatibility is prepared by coating on both sides of the support layer, and the process is simple and efficient. The composite solid electrolyte can effectively inhibit dendritic crystal and reduces interface resistance so that a solid lithium metal battery has higher energy density and longer cycle life.

A semiconductor light emitting device having high reflectivity and a high electrical contact property between a light reflection layer and a semiconductor layer is provided. The semiconductor light emitting device is formed by laminating a semiconductor layer, a light reflection layer and a protective layer on a substrate in this order. The semiconductor layer is formed by laminating a buffer layer, a GaN layer, an n-type contact layer, an n-type cladding layer, an active layer, a p-type cladding layer and a p-type contact layer in this order. The light reflection layer is formed by depositing an Ag alloy on a surface of the p-type contact layer while heating the substrate at, for example, a temperature from 100° C. to less than 400° C. After the semiconductor layer, the light reflection layer and the protective layer are formed, the semiconductor layer, the light reflection layer and the protective layer are heated in a predetermined time range at an ambient temperature within a higher temperature range than a temperature range at the time of heating the substrate.

The invention relates to a dust fall agent for water mist dust fall. 0.06-0.2wt% of wetting agent permeation assistant is added to water, wherein the wetting permeation assistant comprises anionic surfactant, or cationic surfactant, or zwitterionic surfactant, or non-ionic surfactant. Because in the dust fall agent of the invention, 0.06-0.2wt% of wetting agent permeation assistant is added to water, thus the surface tension of the water can be reduced, the contact capacity of the water with dust particles is promoted, and solid materials can be soaked by water more easily through the wetting agent permeation assistant, thereby accelerating the wetting permeation velocity of water to the dust particles, accelerating the fall velocity of the dust particles, and reducing the fall time of the dust particles. Thus, the invention reduces the operation time and the operation cost, protects the health and safety of operation personnel, and can be widely applied to water spray, water sprinkling, dust fall and dust suppression of mines, tunnels or roads.

A semiconductor power device having shielded gate structure in an active area and having ESD clamp diode with two poly-silicon layer process is disclosed, wherein: the shielded gate structure comprises a first poly-silicon layer to serve as a shielded electrode and a second poly-silicon layer to serve as a gate electrode, and the ESD clamp diode formed between two protruding electrodes is also formed by the first poly-silicon layer. A mask specially used to define the ESD clamp diode portion is saved.

A connecting structure is for a printed wiring board to be electrically connected to a FPC. The FPC includes a substrate and electro-conductive portions. The printed wiring board includes an insertion opening provided on an edge surface thereof, and line connecting terminals formed on an inner wall face of the insertion opening. A dual in-line contact member including first contact members is fixed to the top end portion of the FPC. Each first contact member includes a main body, and a first arm and a second arm extending from the main body generally in parallel to each other. Furthermore, the first arm and the second arm are bent at bent portions so as to form curves protruding away from each other. With the present embodiment, at least one of the first arm and the second arm press the corresponding line connecting terminal provided within the insertion opening at the bent portion thereof by inserting the FPC to the insertion opening of the printed wiring board. Thus, the FPC is connected to the edge surface of the printed wiring board. This improves the freedom from the perspective of design of the wiring pattern as well as allowing mounting of circuit components with high circuit density.

Fabrication of surfaces with reduced protein adsorption and/or cell adhesion comprising a vapor deposition coating process such that the coating includes polymer interfaces containing chemical groups reducing the protein adsorption and/or cell adhesion. The invention allows precise anchoring and presentation of biomolecules in their biological context. The resulting systems comprise superior surfaces for design of protein- or cellbased bioassays, because of high-signal-to-noise ratios. Background adsorption is suppressed while specific interaction with capturing molecules is not affected.

The invention discloses a trench insulated gate bipolar transistor (IGBT) device. According to the invention, an emitter region-base region contact doping zone with a P<+> type is included. The doping zone is in a P-type base and at least encompasses the lowest part of an emitter region-base region contact trench. The concentration of the majority carriers in the emitter region-base region contact doping zone is higher than that of the P-type base, and the emitter region-base region contact doping zone keeps a predetermined distance from a channel region nearby trench gates, so that it can be guaranteed that an emitter electrode-base electrode resistor can be reduced under the condition that a grid electrode- emitter electrode threshold voltage is not improved.

The invention provides an anti-interference electrocardiograph detection system, a detection method, a special flexible graphene electrode, and a preparation method and the application of the special flexible graphene electrode. The anti-interference electrocardiograph detection system comprises the flexible graphene electrode, an electrocardiosignal acquiring and processing module, an impedance measurement module, an electrocardiographic wire and a signal processing module, can measure an electrocardiosignal and a motion artifact signal, and removes the motion artifact in the electrocardiosignal. The flexible graphene electrode is formed in a way that a graphene material is adhered on a sponge layer through negative pressure deposition to obtain a graphene-sponge conductive composite, a fastener is additionally added on the graphene-sponge conductive composite, and the electrocardiographic wire is fixedly connected to the graphene-sponge conductive composite through the fastener. The anti-interference electrocardiograph detection system and the detection method effectively overcome the interference of the motion artifact on the electrocardiosignal, and guarantees the instantaneity, the accuracy and the reliability of the electrocardiographic examination result; the preparation flow of the flexible graphene electrode is simple, the biological compatibility of the flexible graphene electrode is good, the service life of the flexible graphene electrode is long, and the flexible graphene electrode can be used in the anti-interference electrocardiograph detection system.