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1035results about How to "Large width" patented technology

Mold for Wiring Substrate Formation and Process for Producing the Same, Wiring Substrate and Process for Producing the Same, Process for Producing Multilayered Laminated Wiring Substrate and Method for Viahole Formation

A process for producing a wiring board is provided, comprising allowing a wiring board-forming mold, which comprises a support base and a mold pattern that is formed in a protruded shape on one surface of the support base wherein the sectional width of the mold pattern on the support base side is larger than the sectional width thereof on the tip side in the same section of the mold pattern, to penetrate into a curing resin layer to transfer the mold pattern, curing the curing resin layer, releasing the laminate from the mold, depositing a conductive metal, and polishing the deposited metal layer that to form a depressed wiring pattern, and a wiring board produced by this process. Further, described is a process for producing a wiring board, comprising bringing a precision mold having a mold pattern on a surface of a mold base into contact with a surface of a metal thin film formed on an organic insulating base, pressing the mold to form a depression having a shape corresponding to the mold pattern of the precision mold in the organic insulating base, thereafter forming a metal plating layer having a thickness larger than the depth of the depression to fill the plating metal in the depression, and then polishing the metal plating layer until the organic insulating base is exposed, to form a wiring pattern, and a wiring pattern produced by this process.
Owner:MITSUI MINING & SMELTING CO LTD

Method of and apparatus for manufacturing semiconductor thin film, and method of manufacturing thin film transistor

A method of manufacturing a semiconductor thin film includes (A) forming an amorphous semiconductor film on a substrate, (B) irradiating a beam to a surface of the amorphous semiconductor film such that a predetermined region of the amorphous semiconductor film is melted and solidified to form a crystallized semiconductor film, and (C) scanning the beam in a first direction. A second direction is a direction on the surface of the amorphous semiconductor film perpendicular to the first direction. A length along the second direction of a cross section of the beam is substantially equal to or less than two times a width along the second direction of the crystallized semiconductor film.
Owner:VISTA PEAK VENTURES LLC
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