1181results about How to "Avoid melting" patented technology

An automatic groove-tracing welding system is capable of carrying out a welding operation, particularly, a welding operation involving weaving, without requiring monitoring even if conditions of a groove is different from design conditions of the groove. An image processor 3 receives an image signal representing an image of a weld zone 52 including the tip of a welding wire from a camera head 2 provided with a CCD camera, processes the image of the weld zone 52 to determine the position of a groove, calculates the positional relation of the groove with a welding torch 1, and sends a position correction for correcting the position of the welding torch 1 so that the welding path of the tip of the welding torch 1 may coincide with a predetermined middle part in the groove to a robot controller 43 for controlling a welding robot. When the automatic groove-tracing welding system performs a welding operation involving weaving, the image processor 3 receives a weaving phase signal representing phases of weaving from the robot controller 43, calculates the positional relation between the groove and the welding torch on the basis of the phase of weaving, and sends a weaving width correction signal to the robot controller 43.

A multi-layer wiring board without a core substrate includes: a multi-layer laminated structure; first terminals provided on a front surface of the multi-layer laminated structure; second terminals provided on a rear surface of the multi-layer laminated structure; terminal pins bonded to a corresponding one of the second terminals, wherein each of the terminal pins is formed in a nailhead shape that includes a shaft portion and a head portion, and a diameter of the head portion is larger than that of the shaft portion; and a reinforcing plate which has pin insertion openings formed at positions corresponding to the terminal pins and which is fixed to the rear surface, wherein the diameter of the pin insertion openings is smaller than the diameter of the head portion and is larger than the diameter of the shaft portion.

A titanium-aluminide turbine wheel (120, 220, 320, 420) is joined to the end of a shaft (110, 210, 310, 410) by utilizing a titanium surface on the end of the shaft to be joined to the wheel, and electron-beam welding the wheel onto the titanium surface on the shaft. A steel shaft (110, 310, 410) can have a titanium-containing end piece (130, 330, 430) mechanically joined (by brazing, bonding, or welding) to the end of the shaft, and the end piece can be directly electron-beam welded to the wheel. Alternatively, the shaft (210) can be formed as a titanium member and the end (212) of the shaft can be directly electron-beam welded to the wheel (220). In another embodiment, a ferrous end piece (330) is mechanically joined to the titanium-aluminide turbine wheel (320) and then the end piece is directly electron-beam welded to the end of a steel shaft (310). Alternatively, a silver-titanium alloy member (430) is sandwiched between the wheel (420) and a steel shaft (410) and is melted to join the parts together.

The present invention provides a ceramic filter to be used at a high temperature, and it contains a substance having preferential reactivity with an ash component contained in materials captured by the ceramic filter and not removed by a high temperature treatment such as combustion over the principal component of the ceramic filter; the reaction between said ash component being not removed by a high temperature treatment such as combustion of the filter and remaining accumulated and the filter component to cause melting of the filter being suppressed to attain a long period of service.

A method for making a crystalline wafer, in which an interface layer is associated with a support substrate. A first layer is associated with the interface layer in a strained state. The interface layer is melted sufficiently to substantially uncouple the first layer from the support substrate to relax the first layer from the strained to state to a relaxed state. The interface material is solidified with the first layer in the relaxed state to obtain a first wafer.

The apparatus for cutting a flat glass work piece along a curved dividing line includes a laser generating a laser beam having a linear beam profile and an optical system with a scanner for producing a curvilinear focal point from the laser beam. The apparatus also moves a cold spot along the curved dividing line following the curvilinear focal point. A trajectory control device controls the position of the curvilinear focal point on the curved dividing line via actuators. A profile control device controls the contour of the curvilinear focal point according to trajectory data from the curved dividing line, so that all points of the curvilinear focal point lie on or coincide with the curved dividing line. The apparatus adjusts the length of the curvilinear focal point by adjusting scanning amplitude of the scanning motion.

The invention discloses a strengthening ventilation heat-insulation roadbed, characterized in that compacting sand-gravel-soil cushion is set on the compacting native surface; transverse concrete air ducts through wall with automatic air door controlled by temperature are set on the sand-gravel-soil cushion in a certain distance; crushed stone layer is set between air ducts through wall and above them; earthwork cloth is put on the horizontal crushed stone layer; heat insulation material is set on the earthwork cloth; and compacting embankment fill is filled on the heat insulation material. In the invention air ducts through wall are set in the crushed stone layer. In winter, by using lower temperature in frozen earth area and bigger wind speed through permeable hole of air duct the effect of convective cooling of air in the crushed stone layer is strengthened and there is strong ventilation cooling effect in air duct through wall itself. Two are combined with each other and are used by each other to decrease the temperature of frozen soil under the roadbed. In summer, the heat insulation material, the crushed stone layer and air duct through wall with air door controlled by temperature can play a role of thermal screen effect so as to prevent heat energy entering into embankment. At last storing cooling energy to the utmost is achieved; the temperature of frozen soil is decreased, the melting of frozen soil is avoided and the stability of embankment of frozen soil is ensured.

An icemaker and a method for controlling the same are disclosed. An object of the present invention is to provide an icemaker and a method for controlling the same, which has an improved structure to make a lot of ice in a short time. an icemaker includes an ice tray rotatable with at least one column of ice making chambers formed therein to make ice; an ejector rotatably provided in each ice making chamber to eject the ice formed in the ice making chamber; an operation device which rotates the ice tray; and a separation device which separates the ice from the ice tray. The separation device may be a heater which heats the ice. Preferably, the heater is operated until adhesive force which acts between the ice and the ice tray is smaller than pushing force in which the ejector pushes the ice.

A fireproof lamp, comprises a barrel cover (2) and a lamp holder (4) installed therein. A through hole (6) is provided on the barrel cover (2). A pipe (5) is installed in the through hole (6), and an electric wire connected with the lamp holder (4) is connected to a junction box (8) outside of the barrel cover (2). An expansion fireproof material (9) is provided inside the barrel cover (2).

Disclosed is an improved semiconductor structure (e.g., a silicon germanium (SiGe) hetero-junction bipolar transistor) having a narrow essentially interstitial-free SIC pedestal with minimal overlap of the extrinsic base. Also, disclosed is a method of forming the transistor which uses laser annealing, as opposed to rapid thermal annealing, of the SIC pedestal to produce both a narrow SIC pedestal and an essentially interstitial-free collector. Thus, the resulting SiGe HBT transistor can be produced with narrower base and collector space-charge regions than can be achieved with conventional technology.

A battery (2) includes an insulating member (40) fitted into a hole (26) in a case (20), and electrode terminals (60, 70), each being passed through the insulating member (40) and extended out of the case (20). The insulating member (40) includes: a first insulating portion (42) that isolates each of the electrode terminals (60, 70) from the inner surface of the hole (26) and closes the interface between each of the electrode terminals (60, 70) and the inner surface; and a second insulating portion (48) formed along the surface of each of the terminals (60, 70) at the outer end portion of the insulating member (40).

The invention discloses a charging method in monocrystalline silicon ingot casting. The method comprises the steps that: a plurality of seed crystals are placed on a bottom surface of a crucible; one or more filling materials with a melting point no lower than that of silicon is filled in gaps among the seed crystals and between the seed crystals and a crucible wall; and a silicon raw material used in ingot casting is placed on the surface of the seed crystals. The invention also provides a monocrystalline silicon ingot casting method. With the method, when the silicon raw material is filled into the crucible, the filling materials with the melting point no lower than that of silicon is filled in gaps among the seed crystals and between the seed crystals and the crucible wall. Therefore, when the silicon raw material is molten, the molten silicon is prevented from entering the gaps among the seed crystals and between the seed crystals and the crucible wall, so that seed crystal floating and melting caused by the molten silicon are prevented. According to the value of silicon raw material thermal conductivity, a leveled charging method is adopted, so that temperature gradient during a monocrystalline silicon ingot casting procedure is increased. Therefore, molten silicon is prevented from contacting the seed crystals in a premature stage, and seed crystals can be prevented from melting too fast. Therefore, difficulty in controlling monocrystalline silicon ingot casting process can be prevented.

Methods and systems for performing laser thermal processing (LTP) of semiconductor devices are disclosed. The method includes forming a dielectric cap atop a temperature-sensitive element, and then forming an absorber layer atop the dielectric layer. A switch layer may optionally be formed atop the absorber layer. The dielectric cap thermally isolates the temperature-sensitive element from the absorber layer. This allows less-temperature-sensitive regions such as unactivated source and drain regions to be heated sufficiently to activate these regions during LTP via melting and recrystallization of the regions, while simultaneously preventing melting of the temperature-sensitive element, such as a poly-gate.

The invention relates to a piece of growth equipment and a growth method for large-size gallium oxide monocrystalline. The equipment comprises the following components: a zirconia insulating brick (1), a quartz cylinder (2), a water cooling copper electrode (3), an iraurita crucible (4), a heat exchanger (6), and an infrared thermometer (7). The method comprises the following steps: the iraurita crucible (4) is placed in the crystal growth furnace cavity formed by the zirconia insulating brick (1), the outside of the zirconia insulating brick (1) is provided with the quartz cylinder (2) and the water cooling copper electrode (3) in order, the heat exchanger (6) is placed at the bottom of the iraurita crucible (4), the infrared thermometer (7) is connected to the iraurita crucible (4), andthe iraurita crucible (4) contains a gallium oxide solution (8) and seed crystal (5). Compared with the prior art, heat exchange method is used for growing crystal, the efficiency is improved, and production cost is reduced; at the same time, grown crystal has the advantages of excellent quality, little stress, low dislocation density, good crystal perfection and optical homogeneity, improved utilization rate of the gallium oxide material, and simplified processing operation.