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321results about How to "Accurately carry-out" patented technology

Preamble receiving apparatus

Provided is a preamble receiving apparatus, including: a receiving unit receiving from a transmitting apparatus a frame having a format which contains a preamble section and a margin section subsequent to the preamble section; and a reception processing unit detecting a preamble signal which is transmitted in the preamble section in the transmitting apparatus from the received frame, wherein the reception processing unit includes: a correlation processing unit which defines as a search section a time having a predetermined starting point and which is equal to or shorter than the margin section, and creates a power profile for each of divided sections through a correlating process operation related to a plurality of divided sections obtained by dividing the search section; and a coupled profile creating unit for creating a coupled power profile by coupling the power profile for each of the divided sections to each other.
Owner:FUJITSU LTD

Process for the production of electronic parts

A method of supporting a semiconductor substrate according to the present invention can be applied to the step of processing the semiconductor substrate at a high temperature of 350° C. or higher, and there is provided a process for the production of electronic parts, comprising the steps of forming semiconductor circuits on one surface (surface A) of a semiconductor substrate (SEC) having a thickness of at least 0.2 mm, supporting the semiconductor substrate on a supporting substrate (BP) by bonding (AS) of said surface A to the supporting substrate (BP), grinding and polishing the exposed other surface (surface B) of the semiconductor substrate (SEC) by a physical method, a chemical method or a method of combination of these methods, to decrease the thickness of the semiconductor substrate (SEC) to less than 0.2 mm, forming semiconductor circuits in the polished surface, to obtain an electronic-circuits-possessing semiconductor substrate (PSE), and peeling (PS) the electronic-circuits-possessing semiconductor substrate (PSE) off from the supporting substrate (BP), wherein the step of grinding and polishing the surface B or the step of forming electronic parts in the surface B includes the step of processing the surface B at a high temperature of at least 350° C., and the bonding (AS) uses a heat-resistant thermoplastic (RF).
Owner:MITSUBISHI GAS CHEM CO INC
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