Growth equipment and growth method for large-size gallium oxide monocrystalline

Abstract

The invention relates to a piece of growth equipment and a growth method for large-size gallium oxide monocrystalline. The equipment comprises the following components: a zirconia insulating brick (1), a quartz cylinder (2), a water cooling copper electrode (3), an iraurita crucible (4), a heat exchanger (6), and an infrared thermometer (7). The method comprises the following steps: the iraurita crucible (4) is placed in the crystal growth furnace cavity formed by the zirconia insulating brick (1), the outside of the zirconia insulating brick (1) is provided with the quartz cylinder (2) and the water cooling copper electrode (3) in order, the heat exchanger (6) is placed at the bottom of the iraurita crucible (4), the infrared thermometer (7) is connected to the iraurita crucible (4), andthe iraurita crucible (4) contains a gallium oxide solution (8) and seed crystal (5). Compared with the prior art, heat exchange method is used for growing crystal, the efficiency is improved, and production cost is reduced; at the same time, grown crystal has the advantages of excellent quality, little stress, low dislocation density, good crystal perfection and optical homogeneity, improved utilization rate of the gallium oxide material, and simplified processing operation.

Description

technical field [0001] The invention relates to a growth method and a growth device of a gallium oxide single crystal, in particular to a large-size, high-quality, gallium oxide single crystal growth method and a growth device, belonging to the technical field of crystal growth. Background technique [0002] β-Gallium Oxide (β-Ga 2 o 3 ) single crystal is a new type of wide bandgap oxide semiconductor material, which can be used as high-power components, with high breakdown voltage and large current density, and can also be used for LED chips, various sensor components and imaging components Wait. Among them, β-Ga 2 o 3 Single crystal as the substrate material of GaN is the most promising application. It combines the conductivity of silicon carbide and the light transmission of sapphire, and the (100) crystal plane has zero mismatch with the GaN lattice after surface nitriding reconstruction. . β-Ga 2 o 3 It has the following advantages: (1) It has electrical conduct...

AI Technical Summary

Problems solved by technology

This is exactly the growth of the guided mode method, and the disadvantage of the guided mode method is very obvious: the mold of the guided mode method is generally higher than the liquid level in the crucible, and when the top of the mold reaches the crystal growth temperature, the temperature of the melt in the crucible is generally higher than that of the crucible. The melting point is tens of degrees, which intensifies the decomposition and volatilization of the melt; the guided mode growth method needs to observe the crystal growth through the observation window, and the observation window is often blocked by volatiles and loses its function. The β- Ga 2 o 3 Single crystal, common problems such as bubbles, growth streaks, cleavage cracking, polycrystalline, etc., seriously affect the crystal quality

Images