Visible-light response MoS2/GO/g-C3N4 ternary composite photocatalytic material and preparation method thereof

A photocatalytic material and ternary composite technology, applied in the direction of catalyst activation/preparation, chemical instruments and methods, physical/chemical process catalysts, etc., can solve the problem of low photogenerated electron-hole separation efficiency and binary system catalytic efficiency No high-level problems, to achieve the effect of improving photocatalytic performance, improving electron conduction ability, and uniform dispersion

Inactive Publication Date: 2019-01-11
JIANGSU UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to overcome the technical defect that exists in the prior art, solve MoS 2 , g-C 3 N 4 Mo...

Method used

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  • Visible-light response MoS2/GO/g-C3N4 ternary composite photocatalytic material and preparation method thereof
  • Visible-light response MoS2/GO/g-C3N4 ternary composite photocatalytic material and preparation method thereof
  • Visible-light response MoS2/GO/g-C3N4 ternary composite photocatalytic material and preparation method thereof

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Embodiment 1

[0030] The present invention confirms that MoS 2 Optimum Catalyst Ratio of / GO Binary Composite Photocatalytic Materials to Synthesize MoS 2 / GO / g -C 3 N 4 Ternary composite photocatalytic materials. With 5wt%MoS 2 / GO binary ternary composite photocatalytic material preparation as an example:

[0031] 0.1439g of MoO 3 Add 0.2429g of KSCN to 10mL of deionized water, stir and ultrasonically disperse for 30min to obtain a mixed solution; disperse 0.005g of GO in 10mL of ethylene glycol, disperse evenly, add to the above mixed solution, and continue ultrasonically dispersing for 30min , into a 25mL reactor, 180 o C oven constant temperature 24h. After cooling to room temperature, wash with ethanol and deionized water three times respectively, and centrifugally dry to obtain MoS with 5 wt% GO. 2 / GO binary composite photocatalytic materials.

[0032] Wherein, the present invention does not specifically limit the specific source of the GO, which can be commercially availab...

Embodiment 2

[0035] 1wt%MoS 2 / GO / g -C 3 N 4 Preparation of Ternary Composite Photocatalytic Materials

[0036] The 5wt%MoS prepared in 0.001g embodiment 1 2 / GO and 0.099g of g-C 3 N 4 Add 20mL of ethylene glycol, stir and ultrasonically disperse for 30min each, then put it into a kettle and put it in an oven at 180°C for 24h at a constant temperature. Get MoS 2 MoS with 1wt% / GO ratio 2 / GO / g -C 3 N 4 ternary composite photocatalytic materials.

[0037] Wherein, the present invention is to described g-C 3 N 4 The specific source of is not particularly limited, and it can be commercially available or prepared by solid-state reaction, solvothermal or thermal polymerization. Preferably, the g-C 3 N4 adopts the following preparation method, specifically:

[0038] 6g dicyandiamide is placed in the tube furnace, under nitrogen atmosphere, with 5 o C / min from room temperature to 350°C, keep it for 120min, and then increase the temperature by 5 o C / min raise the temperature to 600...

Embodiment 3

[0040] 3wt%MoS 2 / GO / g -C 3 N 4 Preparation of Ternary Composite Photocatalytic Materials

[0041] The 5wt%MoS prepared in 0.003g embodiment 2 2 / GO and 0.097 g of g-C 3 N 4 Add 20mL of ethylene glycol, stir and ultrasonically disperse for 30min each, then put it into a kettle and put it in an oven at 180°C for 24h at a constant temperature. Get MoS 2 MoS with 3wt% / GO 2 / GO / g -C 3 N 4 ternary composite photocatalytic materials.

[0042] attached figure 2 for MoS 2 , 5wt%MoS 2 / GO, 3wt%MoS 2 / GO / g -C 3 N 4 SEM images of and 3wt%MoS 2 / GO / g -C 3 N 4 Electron dispersion energy spectrum of ; in the figure (A) is MoS 2 SEM image of , (B) is 5wt%MoS 2 SEM image of / GO, (C) is 3wt%MoS 2 / GO / g -C 3 N 4 scanning electron microscope image. As shown in the figure, 3wt%MoS 2 / GO / g -C 3 N 4 Medium MoS 2 It has a smaller nanoscale and is uniformly dispersed on GO, while GO is combined with the carrier material g-C 3 N 4 Under the action of π-π conjugation, the...

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Abstract

The invention relates to the field of environment functional materials and specifically relates to a visible-light response MoS2/GO/g-C3N4 ternary composite photocatalytic material and a preparation method thereof. The ternary composite photocatalytic material is prepared by compounding MoS2, GO and g-C3N4; and MoS2 is uniformly loaded on GO in a nanoparticle way and forms the ternary composite photocatalytic material with a compact structure under the pi-pi conjugate action of GO and g-C3N4. Shown by photocatalytic degradation performance tests, the MoS2/GO/g-C3N4 ternary composite photocatalytic material provided by the invention has better RhB photocatalytic degradation performance than an MoS2/g-C3N4 monomer and an MoS2/GO binary composite catalyst and has a good application prospect and economic benefit on the aspect such as solar energy conversion and sewage treatment.

Description

technical field [0001] The invention relates to the field of environmental functional materials, in particular to a visible light responsive MoS 2 / GO / g -C 3 N 4 Ternary composite photocatalytic material and preparation method thereof. Background technique [0002] With the rapid development of global industrial technology, the problem of environmental pollution has become increasingly serious, causing immeasurable harm to people's health and life. Therefore, controlling pollution and protecting the environment has become one of the most concerned issues. In recent years, photocatalytic technology has developed rapidly and has become a green technology with important application prospects in the fields of energy and environment. Among them, semiconductor photocatalysts have attracted much attention in the fields of environmental purification and solar energy conversion due to their advantages of simple preparation, low energy consumption, and fast degradation speed. [...

Claims

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Application Information

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IPC IPC(8): B01J27/24B01J37/34C02F1/30C02F101/34C02F101/38
CPCB01J27/24B01J35/004B01J37/343C02F1/30C02F2101/308C02F2101/34C02F2101/38C02F2305/10Y02A20/212
Inventor 颜佳宋志龙李华明许晖李宏平袁寿其王昕蒲文杰
Owner JIANGSU UNIV
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