Preparation method for GaAs/Ge/GaAs heterostructure SPiN diode string used for sleeve antenna

Abstract

The invention relates to a preparation method for a GaAs / Ge / GaAs heterostructure SPiN diode string used for a sleeve antenna. The preparation method comprises the steps of (a), selecting a GeOI substrate; (b), etching a top layer Ge layer of the GeOI substrate to form a first trench and a second trench in the top layer Ge layer; (c), depositing a GaAs material in the first trench and the second trench; (d), performing P type ion implantation on the GaAs material in the first trench by adopting an ion implantation process to form a P type active region, and performing N type ion implantation on the GaAs material in the second trench to form an N type active region; and (e), forming lead holes in the surfaces of the P type active region and the N type active region and performing metal sputtering to form the GaAs / Ge / GaAs heterostructure SPiN diode. According to the embodiments, the high-performance Ge-based SPiN diode string, which is applicable to formation of a solid-state plasma antenna, can be prepared and provided through a deep trench isolation technology and the ion implantation process.

Description

Technical field [0001] The present invention relates to the technical field of integrated circuits, in particular to a method for preparing a GaAs / Ge / GaAs heterostructure SPiN diode string used in a sleeve antenna. Background technique [0002] At present, the materials used in SPiN diodes for plasma reconfigurable antennas at home and abroad are all bulk silicon materials. This material has the problem of low carrier mobility in the intrinsic region, which affects the carrier concentration in the intrinsic region of the SPiN diode. Affects its solid plasma concentration; and most of the P and N regions of the structure are formed by an implantation process. This method requires a large implant dose and energy, requires high equipment, and is incompatible with existing processes; instead, a diffusion process is used, Although the junction is deeper, at the same time, the area of ​​the P and N regions is large, the integration level is low, and the doping concentration is uneven, ...

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Problems solved by technology

[0002] At present, the materials used in SPiN diodes used in plasma reconfigurable antennas at home and abroad are all bulk silicon materials. This material has the problem of low carrier mobility in the intrinsic region, which affects the carrier concentration in the intrinsic region of the SPiN diode. Affect its solid-state plasma concentration; and the P region and N region of this structure are mostly formed by implantation process, which requires a large implant dose and energy, high requirements on equipment, and is incompatible with existing processes; and the diffusion process, Although the junction depth is deep, but at the same time, the area of ​​the P region and the N region is large, the integration degree is low, and the doping concentration is uneven, which affects the electrical performance of the SPiN diode, resulting in poor controllability of the solid-state plasma concentration and distribution.

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