The invention relates to a preparation method for a Ge-based heterogeneous SPiN
diode applied to a reconfigurable annular antenna. The preparation method comprises the steps of selecting a GeOI substrate of a certain
crystal orientation, and forming a first
protection layer on the surface; forming a first isolation region pattern on the first
protection layer by a photoetching process;
etching the first
protection layer and the GeOI substrate in appointed positions of the first isolation region pattern through a
dry etching process to form an isolation groove, wherein the depth is greater than or equal to the thickness of top layer Ge of the GeOI substrate; filling the isolation groove to form an isolation region of the Ge-based heterogeneous SPiN
diode;
etching the GeOI substrate to form a P type trench and an N type trench, wherein the depth is smaller than the thickness of top layer Ge of the GeOI substrate; filling the P type trench and the N type trench, and forming a P type active region and an N type active region in the P type trench and the N type trench by adopting
ion implantation; and forming leads on the GeOI substrate to complete the preparation of the Ge-based heterogeneous SPiN
diode. According to the embodiments, the Ge-based heterogeneous SPiN diode, which is applicable to formation of the
solid-state antenna, can be prepared through a
deep trench isolation technology and an
ion implantation process.