SPiN diode with GaAs-Ge-GaAs heterostructure and preparation method of SPiN diode

Abstract

The invention relates to a SPiN diode with a GaAs-Ge-GaAs heterostructure and a preparation method of the SPiN diode. The preparation method comprises the following steps: (1) selecting a GeOI substrate; (b) etching a Ge layer as a top layer of the GeOI substrate to form a first groove and a second groove in the Ge layer as the top layer; (c) depositing GaAs materials in the first groove and the second groove respectively; (d) carrying out P-type ion implantation on the GaAs material in the first groove by utilizing an ion implantation process to form a P-type active region, and carrying out N-type ion implantation on the GaAs material in second first groove by utilizing second ion implantation process to form an N-type active region; and (e) forming lead wire holes in the surfaces of the P-type active region and the N-type active region respectively, and sputtering metal to form the SPiN diode with the GaAs-Ge-GaAs heterostructure. According to the SPiN diode disclosed by the embodiment of the invention, by utilizing a deep trench isolation technology and the ion implantation process, the high-performance Ge-based SPiN diode suitable for forming a solid-state plasma antenna can be prepared and supplied.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a GaAs-Ge-GaAs heterostructure SPiN diode and a preparation method thereof. Background technique [0002] At present, the materials used in SPiN diodes used in plasma reconfigurable antennas at home and abroad are all bulk silicon materials. This material has the problem of low carrier mobility in the intrinsic region, which affects the carrier concentration in the intrinsic region of the SPiN diode. Affect its solid-state plasma concentration; and the P region and N region of this structure are mostly formed by implantation process, which requires a large implant dose and energy, high requirements on equipment, and is incompatible with existing processes; and the diffusion process, Although the junction depth is deep, the area of ​​the P region and the N region is large, the integration degree is low, and the doping concentration is uneven, which affects the electric...

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Problems solved by technology

[0002] At present, the materials used in SPiN diodes used in plasma reconfigurable antennas at home and abroad are all bulk silicon materials. This material has the problem of low carrier mobility in the intrinsic region, which affects the carrier concentration in the intrinsic region of the SPiN diode. Affect its solid-state plasma concentration; and the P region and N region of this structure are mostly formed by implantation process, which requires a large implant dose and energy, high requirements on equipment, and is incompatible with existing processes; and the diffusion process, Although the junction depth is deep, but at the same time, the area of ​​the P region and the N region is large, the integration degree is low, and the doping concentration is uneven, which affects the electrical performance of the SPiN diode, resulting in poor controllability of the solid-state plasma concentration and distribution.

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