Preparation method of GaAs/Ge/GaAs SPiN diode string for reconfigurable dipole antenna
A technology of dipole antenna and diode string is applied in the field of preparation of GaAs/Ge/GaAsSPiN diode string, which can solve the problems of incompatibility, low integration and large area, and achieve the effect of improving performance, improving injection efficiency and current
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Embodiment 1
[0052] See figure 1 , figure 1 It is a structural schematic diagram of a reconfigurable reconfigurable dipole antenna according to an embodiment of the present invention. The reconfigurable dipole antenna includes a GeOI substrate (1), a first antenna arm (2), a second antenna arm (3) and a coaxial feeder (4); the antenna arm is made of a plurality of GaAs / Ge / GaAs SPiN diode string is formed, and the preparation method of described GaAs / Ge / GaAs SPiN diode string comprises:
[0053] (a) choose a GeOI substrate; deposit the first protective layer on the surface of the GeOI substrate;
[0054] (b) using a first mask, etching the first protection layer and the GeOI substrate by a dry etching process to form isolation trenches in the GeOI substrate;
[0055] (c) filling the isolation trench with an isolation material; removing the first protective layer and the isolation material outside the isolation trench to form the isolation region;
[0056] (d) etching the top Ge layer o...
Embodiment 2
[0098] See Figure 3a-Figure 3r , Figure 3a-Figure 3r It is a schematic diagram of a preparation method of a GaAs-Ge-GaAs heterostructure SPiN diode according to an embodiment of the present invention. On the basis of the above-mentioned embodiment 1, the channel length is 22nm (the length of the solid-state plasma region is 100 microns) The GaAs-Ge-GaAs heterostructure SPiN diode is taken as an example to describe in detail, and the specific steps are as follows:
[0099] Step 1, substrate material preparation steps:
[0100] (1a) if Figure 3a As shown, the (100) crystal orientation is selected, the doping type is p-type, and the doping concentration is 10 14 cm -3 A GeOI substrate sheet 101, the thickness of the top layer Ge is 50 μm;
[0101] (1b) if Figure 3b As shown, the method of chemical vapor deposition (Chemical vapor deposition, referred to as CVD) is used to deposit a layer of the first SiO with a thickness of 40nm on the GeOI substrate. 2 layer 201;
[01...
Embodiment 3
[0129] Please refer to Figure 4 , Figure 4 It is a schematic diagram of a device structure of a heterogeneous Ge-based SPiN diode according to an embodiment of the present invention. The GaAs-Ge-GaAs heterostructure SPiN diode adopts the above-mentioned as figure 1 The preparation method shown is made, specifically, the SPiN diode of the GaAs-Ge-GaAs heterostructure is prepared and formed on the GeOI substrate 401, and the P region 404, the N region 405 of the SPiN diode and the lateral position of the P region 404 The i region (intrinsic region) between the N region 405 is located in the top layer Ge402 of the GeOI substrate. Wherein, the SPiN diode can be isolated by STI deep trenches, that is, an isolation trench 403 is provided outside the P region 404 and the N region 405, and the depth of the isolation trench 403 is greater than or equal to the thickness of the top layer Ge402.
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