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Preparation method of GaAs/Ge/GaAs SPiN diode string for reconfigurable dipole antenna

A technology of dipole antenna and diode string is applied in the field of preparation of GaAs/Ge/GaAsSPiN diode string, which can solve the problems of incompatibility, low integration and large area, and achieve the effect of improving performance, improving injection efficiency and current

Active Publication Date: 2017-06-13
QIXING INTELLIGENT TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the materials used in SPiN diodes used in plasma reconfigurable antennas at home and abroad are all bulk silicon materials. This material has the problem of low carrier mobility in the intrinsic region, which affects the carrier concentration in the intrinsic region of the SPiN diode. Affect its solid-state plasma concentration; and the P region and N region of this structure are mostly formed by implantation process, which requires a large implant dose and energy, high requirements on equipment, and is incompatible with existing processes; and the diffusion process, Although the junction depth is deep, but at the same time, the area of ​​the P region and the N region is large, the integration degree is low, and the doping concentration is uneven, which affects the electrical performance of the SPiN diode, resulting in poor controllability of the solid-state plasma concentration and distribution.

Method used

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  • Preparation method of GaAs/Ge/GaAs SPiN diode string for reconfigurable dipole antenna
  • Preparation method of GaAs/Ge/GaAs SPiN diode string for reconfigurable dipole antenna
  • Preparation method of GaAs/Ge/GaAs SPiN diode string for reconfigurable dipole antenna

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Embodiment 1

[0052] See figure 1 , figure 1 It is a structural schematic diagram of a reconfigurable reconfigurable dipole antenna according to an embodiment of the present invention. The reconfigurable dipole antenna includes a GeOI substrate (1), a first antenna arm (2), a second antenna arm (3) and a coaxial feeder (4); the antenna arm is made of a plurality of GaAs / Ge / GaAs SPiN diode string is formed, and the preparation method of described GaAs / Ge / GaAs SPiN diode string comprises:

[0053] (a) choose a GeOI substrate; deposit the first protective layer on the surface of the GeOI substrate;

[0054] (b) using a first mask, etching the first protection layer and the GeOI substrate by a dry etching process to form isolation trenches in the GeOI substrate;

[0055] (c) filling the isolation trench with an isolation material; removing the first protective layer and the isolation material outside the isolation trench to form the isolation region;

[0056] (d) etching the top Ge layer o...

Embodiment 2

[0098] See Figure 3a-Figure 3r , Figure 3a-Figure 3r It is a schematic diagram of a preparation method of a GaAs-Ge-GaAs heterostructure SPiN diode according to an embodiment of the present invention. On the basis of the above-mentioned embodiment 1, the channel length is 22nm (the length of the solid-state plasma region is 100 microns) The GaAs-Ge-GaAs heterostructure SPiN diode is taken as an example to describe in detail, and the specific steps are as follows:

[0099] Step 1, substrate material preparation steps:

[0100] (1a) if Figure 3a As shown, the (100) crystal orientation is selected, the doping type is p-type, and the doping concentration is 10 14 cm -3 A GeOI substrate sheet 101, the thickness of the top layer Ge is 50 μm;

[0101] (1b) if Figure 3b As shown, the method of chemical vapor deposition (Chemical vapor deposition, referred to as CVD) is used to deposit a layer of the first SiO with a thickness of 40nm on the GeOI substrate. 2 layer 201;

[01...

Embodiment 3

[0129] Please refer to Figure 4 , Figure 4 It is a schematic diagram of a device structure of a heterogeneous Ge-based SPiN diode according to an embodiment of the present invention. The GaAs-Ge-GaAs heterostructure SPiN diode adopts the above-mentioned as figure 1 The preparation method shown is made, specifically, the SPiN diode of the GaAs-Ge-GaAs heterostructure is prepared and formed on the GeOI substrate 401, and the P region 404, the N region 405 of the SPiN diode and the lateral position of the P region 404 The i region (intrinsic region) between the N region 405 is located in the top layer Ge402 of the GeOI substrate. Wherein, the SPiN diode can be isolated by STI deep trenches, that is, an isolation trench 403 is provided outside the P region 404 and the N region 405, and the depth of the isolation trench 403 is greater than or equal to the thickness of the top layer Ge402.

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Abstract

The invention relates to a preparation method of a GaAs / Ge / GaAs SPiN diode string for a reconfigurable dipole antenna. The reconfigurable dipole antenna comprises a GeOI substrate, an antenna arm, a coaxial feeding line and a DC bias line, wherein the antenna arm comprises a plurality of GaAs / Ge / GaAs SPiN diode strings. The preparation method of the GaAs / Ge / GaAs SPiN diode string comprises the steps of selecting the GeOI substrate; etching a top Ge layer of the GeOI substrate to form a first groove and a second groove; depositing GaAs materials in the first groove and the second groove, performing P-type ion injection on the GaAs material in the first groove to form a P-type active region, and performing N-type ion injection on the GaAs material in the second groove to form an N-type active region; and forming lead holes in surfaces of the P-type active region and the N-type active region, and performing metal sputtering to form the GaAs / Ge / GaAs SPiN diode string which is formed by sequentially connecting the GaAs / Ge / GaAs SPiN diodes in an end-to-end way. The preparation method disclosed by the invention can be used for the GaAs / Ge / GaAs SPiN diode string applicable to a high-performance antenna.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a method for preparing a GaAs / Ge / GaAs SPiN diode string used for a reconfigurable dipole antenna. Background technique [0002] With the further development of science and technology, wireless systems are developing in the direction of large capacity, multi-function, multi-band / ultra-broadband, and the integration of different communication systems has increased the number of information subsystems carried on the same platform, and the number of antennas has also increased accordingly. , but the increase in the number of antennas has a greater negative impact on the electromagnetic compatibility, cost, and weight of the communication system. Therefore, the wireless communication system requires the antenna to change its electrical characteristics according to the actual use environment, that is, to realize "reconfigurable" antenna characteristics. The ...

Claims

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Application Information

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IPC IPC(8): H01L29/66H01L21/04H01L21/265H01Q23/00H01Q1/38
CPCH01L21/04H01L21/265H01L29/6609H01L29/66219H01Q1/38H01Q23/00
Inventor 尹晓雪张亮
Owner QIXING INTELLIGENT TECH CO LTD
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