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Preparation method for heterogeneous SiGe-based plasma pin diode string used for sleeve antenna

A technology of diode strings and sleeve antennas, which is applied in antennas, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as large injection dose and energy, low integration, and poor controllability of solid-state plasma concentration and distribution. Achieve the effect of increasing breakdown voltage, increasing injection efficiency and current

Inactive Publication Date: 2017-05-31
XIAN CREATION KEJI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The materials used in the pin diodes used in plasma reconfigurable antennas at home and abroad are all bulk silicon materials. This material has the problem of low carrier mobility in the intrinsic region, which affects the carrier concentration in the intrinsic region of the pin diode, which in turn affects its Solid-state plasma concentration; and the P region and N region of the structure are mostly formed by implantation process, which requires a large implant dose and energy, high requirements on equipment, and is not compatible with existing processes; and the use of diffusion process, although the junction Deeper, but at the same time, the area of ​​the P region and the N region is large, the integration degree is low, and the doping concentration is uneven, which affects the electrical performance of the pin diode, resulting in poor controllability of the solid-state plasma concentration and distribution

Method used

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  • Preparation method for heterogeneous SiGe-based plasma pin diode string used for sleeve antenna
  • Preparation method for heterogeneous SiGe-based plasma pin diode string used for sleeve antenna
  • Preparation method for heterogeneous SiGe-based plasma pin diode string used for sleeve antenna

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Embodiment 1

[0057] See figure 1 , figure 1 It is a structural schematic diagram of a reconfigurable sleeve antenna according to an embodiment of the present invention; the plasma pin diode string is used to make a sleeve antenna, such as figure 1 As shown, the sleeve antenna includes: a semiconductor substrate (1), a pin diode antenna arm (2), a first pin diode sleeve (3), a second pin diode sleeve (4), a coaxial feeder (5 ), DC bias lines (9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19);

[0058] See figure 2 , figure 2 It is a flow chart of a preparation method of a heterogeneous SiGe-based plasmonic pin diode according to an embodiment of the present invention; the preparation method includes steps:

[0059] (a) Select a SiGeOI substrate with a certain crystal orientation;

[0060] Among them, for step (a), the reason for using SiGeOI substrate is that solid-state plasma antennas require good microwave characteristics, and solid-state plasma pin diodes need to have good isolation cha...

Embodiment 2

[0107] See Figure 5a-Figure 5r , Figure 5a-Figure 5r It is a schematic diagram of the preparation method of another heterogeneous SiGe-based plasmonic pin diode according to the embodiment of the present invention; Taking a diode as an example to describe in detail, the specific steps are as follows:

[0108] Step 1, substrate material preparation steps:

[0109] (1a) if Figure 5a As shown, the SiGeOI substrate 101 with (100) orientation is selected, the doping type is p-type, and the doping concentration is 10 14 cm -3 , the thickness of the top layer SiGe is 50 μm;

[0110] (1b) if Figure 5b As shown, the method of chemical vapor deposition (Chemical vapor deposition, referred to as CVD) is used to deposit a layer of first SiO with a thickness of 40 nm on the SiGe layer. 2 layer 201;

[0111] (1c) Deposit a layer of first Si with a thickness of 2 μm on the substrate by chemical vapor deposition. 3 N 4 / SiN layer 202;

[0112] Step 2, isolation preparation ste...

Embodiment 3

[0138] Please refer to Figure 6 , Figure 6 It is a schematic structural diagram of another heterogeneous SiGe-based plasmonic pin diode according to an embodiment of the present invention. The heterogeneous SiGe-based plasmonic pin diode employs the above-mentioned as figure 2The preparation method shown is made, specifically, the SiGe-based plasma pin diode is prepared and formed on the SiGeOI substrate 301, and the P region 304, the N region 305 of the pin diode and the lateral direction are located between the P region 304 and the N region 305 The I-regions between them are located in the top layer SiGe302 of the substrate. Wherein, the pin diode can be isolated by STI deep trenches, that is, an isolation trench 303 is provided outside the P region 304 and the N region 305, and the depth of the isolation trench 303 is greater than or equal to the thickness of the top SiGe layer.

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Abstract

The invention relates to a preparation method for a heterogeneous SiGe-based plasma pin diode string used for a sleeve antenna. The preparation method comprises the steps of selecting a SiGeOI substrate of a certain crystal orientation, and setting an isolation region on the SiGeOI substrate; etching the substrate to form a P type trench and an N type trench, wherein the depths of the P type trench and the N type trench are smaller than the thickness of the top layer SiGe of the substrate; filling the P type trench and the N type trench, and forming a P type active region and an N type active region in top layer SiGe of the substrate by adopting ion implantation; and forming leads on the substrate to complete the preparation of the heterogeneous SiGe-based plasma pin diode. According to the embodiments, the high-performance heterogeneous SiGe-based plasma pin diode, which is applicable to formation of the solid-state plasma antenna, can be prepared and provided through a deep trench isolation technology and an ion implantation process.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a method for preparing a heterogeneous SiGe-based plasma pin diode string used for a sleeve antenna. Background technique [0002] At present, reconfigurable antennas, especially frequency reconfigurable antennas, can work at multiple frequencies, which greatly expands the application range of antennas, and has always been one of the focuses of research in the field of antennas at home and abroad. The materials used in the pin diodes used in plasma reconfigurable antennas at home and abroad are all bulk silicon materials. This material has the problem of low carrier mobility in the intrinsic region, which affects the carrier concentration in the intrinsic region of the pin diode, which in turn affects its Solid-state plasma concentration; and the P region and N region of the structure are mostly formed by implantation process, which requires a large imp...

Claims

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Application Information

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IPC IPC(8): H01L21/329H01L21/04H01Q23/00
CPCH01L21/04H01L21/0415H01L29/6609H01Q23/00
Inventor 张亮左瑜
Owner XIAN CREATION KEJI CO LTD
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