Preparation method for Ge-based heterogeneous SPiN diode applied to reconfigurable annular antenna
A technology of loop antennas and diodes, which is applied to devices, antennas, and antenna components that enable antennas to work in different bands at the same time. It can solve problems such as increasing the difficulty of antenna design, and achieve the effects of suppressing the impact and improving the breakdown voltage.
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Embodiment 1
[0057] An embodiment of the present invention provides a method for preparing a Ge-based heterogeneous SPiN diode applied to a reconfigurable loop antenna, and the Ge-based heterogeneous SPiN diode is used to manufacture a reconfigurable loop antenna. Please refer to figure 1 , figure 1 It is a structural schematic diagram of a frequency reconfigurable coupled feeding loop antenna based on a Ge-based heterogeneous SPiN diode provided by an embodiment of the present invention. The reconfigurable loop antenna includes: a semiconductor substrate (1); a dielectric plate (2); a first SPIN diode ring (3), a second SPIN diode ring (4), and a first DC bias line (5) and the second DC bias line (6), both arranged on the semiconductor substrate (1); the coupled feed (7), arranged on the dielectric plate (2); the first SPIN diode ring (3), the second SPIN diode ring (4), the first DC bias line (5) and the second DC bias line (6) are fabricated on the semiconductor substrate ( 1) on.
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Embodiment 2
[0097] See Figure 7a-Figure 7r , Figure 7a-Figure 7r It is a schematic diagram of a method for preparing a heterogeneous Ge-based plasma SPIN diode according to an embodiment of the present invention. On the basis of the above-mentioned embodiment 1, a heterogeneous Ge-based diode whose channel length is 22nm (the length of the solid-state plasma region is 100 microns) is prepared. The solid-state plasma SPIN diode is taken as an example to describe in detail, and the specific steps are as follows:
[0098] Step 1, substrate material preparation steps:
[0099] (1a) if Figure 7a As shown, the (100) crystal orientation is selected, the doping type is p-type, and the doping concentration is 1014cm -3 A GeOI substrate sheet 101, the thickness of the top layer Ge is 50 μm;
[0100] (1b) if Figure 7b As shown, a first layer of SiO with a thickness of 40nm is deposited on a GeOI substrate by chemical vapor deposition (Chemical vapor deposition, CVD for short). 2 layer 201;...
Embodiment 3
[0127] Please refer to Figure 8 , Figure 8 It is a schematic diagram of a device structure of a Ge-based heterogeneous SPiN diode according to an embodiment of the present invention. The Ge-based heterogeneous SPiN diode adopts the above-mentioned as figure 2 The preparation method shown is made, specifically, the Ge-based heterogeneous SPiN diode is prepared and formed on the GeOI substrate 301, and the P region 304, the N region 305 of the SPIN diode and the laterally located P region 304 and the N region 305 The I regions in between are located in the top layer Ge302 of the GeOI substrate. Wherein, the SPIN diode can be isolated by STI deep trenches, that is, an isolation trench 303 is provided outside the P region 304 and the N region 305, and the depth of the isolation trench 303 is greater than or equal to the thickness of the top layer Ge302.
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