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Preparation method and device of heterogeneous SiGe-based solid-state plasma PiN diode

A plasma and diode technology, applied in the field of plasma PiN diode preparation, can solve the problems of low integration, high implant dose and energy, and incompatibility, so as to improve injection efficiency and current, suppress influence, and increase breakdown voltage Effect

Active Publication Date: 2017-05-31
XIDIAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] At present, the materials used in PiN diodes used in plasma reconfigurable antennas at home and abroad are all bulk silicon materials. This material has the problem of low carrier mobility in the intrinsic region, which affects the carrier concentration in the intrinsic region of the PiN diode, and thus Affect its solid-state plasma concentration; and the P region and N region of this structure are mostly formed by implantation process, which requires a large implant dose and energy, high requirements on equipment, and is incompatible with existing processes; and the diffusion process, Although the junction depth is deep, but at the same time, the area of ​​the P region and the N region is large, the integration degree is low, and the doping concentration is uneven, which affects the electrical performance of the PiN diode, resulting in poor controllability of the solid-state plasma concentration and distribution.

Method used

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  • Preparation method and device of heterogeneous SiGe-based solid-state plasma PiN diode
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  • Preparation method and device of heterogeneous SiGe-based solid-state plasma PiN diode

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Embodiment 1

[0052] See figure 1 , figure 1 It is a flowchart of a manufacturing method of a heterogeneous SiGe-based solid-state plasma PiN diode according to an embodiment of the present invention. antenna. The method comprises the steps of:

[0053](a) selecting a SiGeOI substrate with a certain crystal orientation, and setting an isolation region on the SiGeOI substrate;

[0054] (b) etching the substrate to form a P-type trench and an N-type trench, the depth of the P-type trench and the N-type trench is less than the thickness of the top layer SiGe of the substrate;

[0055] (c) filling the P-type trench and the N-type trench, and forming a P-type active region and an N-type active region in the top layer SiGe of the substrate by ion implantation; and

[0056] (d) Leads are formed on the substrate to complete the fabrication of heterogeneous SiGe-based solid-state plasmonic PiN diodes.

[0057] Among them, for step (a), the reason for using SiGeOI substrate is that solid-state p...

Embodiment 2

[0092] See Figure 2a-Figure 2r , Figure 2a-Figure 2r It is a schematic diagram of a method for preparing a heterogeneous SiGe-based solid-state plasma PiN diode according to an embodiment of the present invention. On the basis of the first embodiment above, to prepare a solid-state solid-state diode with a channel length of 22 nm (the length of the solid-state plasma region is 100 microns) Plasma PiN diode is taken as an example to describe in detail, the specific steps are as follows:

[0093] Step 1, substrate material preparation steps:

[0094] (1a) if Figure 2a As shown, the SiGeOI substrate 101 with (100) orientation is selected, the doping type is p-type, and the doping concentration is 10 14 cm -3 , the thickness of the top layer SiGe is 50 μm;

[0095] (1b) if Figure 2b As shown, the method of chemical vapor deposition (Chemical vapor deposition, referred to as CVD) is used to deposit a layer of first SiO with a thickness of 40 nm on the SiGe layer. 2 layer...

Embodiment 3

[0123] Please refer to image 3 , image 3 It is a schematic diagram of a device structure of a heterogeneous SiGe-based solid-state plasma PiN diode according to an embodiment of the present invention. The heterogeneous SiGe-based solid-state plasmonic PiN diode adopts the above-mentioned figure 1 The preparation method shown is made, specifically, the SiGe-based solid-state plasma PiN diode is prepared and formed on the SiGeOI substrate 301, and the P region 304, the N region 305 of the PiN diode and the laterally located P region 304 and the N region The I regions between 305 are located in the top layer SiGe 302 of the substrate. Wherein, the PiN diode can be isolated by STI deep trenches, that is, an isolation trench 303 is provided outside the P region 304 and the N region 305, and the depth of the isolation trench 303 is greater than or equal to the thickness of the top SiGe layer.

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Abstract

The invention relates to a preparation method and device of a heterogeneous SiGe-based solid-state plasma PiN diode. The preparation method comprises the steps of selecting a SiGeOI substrate of one crystal orientation and arranging an isolation area in the SiGeOI substrate; etching the substrate to form a P-type groove and an N-type groove, wherein the depths of the P-type groove and the N-type groove are smaller than the thickness of top-layer SiGe of the substrate; filling the P-type groove and the N-type groove and forming a P-type active area and an N-type active area in the top-layer SiGe of the substrate by adopting ion implantation; and forming a lead on the substrate to complete preparation of the heterogeneous SiGe-based solid-state plasma PiN diode. The high-performance heterogeneous SiGe-based solid-state plasma PiN diode suitable for forming a solid-state plasma antenna can be prepared and provided by adopting a deep groove isolation technology and an ion implantation technology.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a method for preparing a heterogeneous SiGe-based solid-state plasma PiN diode and a device thereof. Background technique [0002] At present, the materials used in PiN diodes used in plasma reconfigurable antennas at home and abroad are all bulk silicon materials. This material has the problem of low carrier mobility in the intrinsic region, which affects the carrier concentration in the intrinsic region of the PiN diode, and thus Affect its solid-state plasma concentration; and the P region and N region of this structure are mostly formed by implantation process, which requires a large implant dose and energy, high requirements on equipment, and is incompatible with existing processes; and the diffusion process, Although the junction depth is deep, the areas of the P region and the N region are large, the integration degree is low, and the doping conc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/868H01L21/329
CPCH01L29/66136H01L29/868
Inventor 胡辉勇苗渊浩崔诗敏张鹤鸣宋建军舒斌宣荣喜苏汉
Owner XIDIAN UNIV
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