Preparation method of heterogeneous Ge-based pin diode string in reconfigurable multilayer holographic antenna

Abstract

The invention relates to a preparation method of a heterogeneous Ge-based pin diode string in a reconfigurable multilayer holographic antenna. The preparation method comprises the steps of: selecting a GeOI substrate in a crystal orientation, and setting an isolation region in the GeOI substrate; etching the GeOI substrate to form P-type grooves and N-type grooves, wherein the depth of the P-type grooves and the N-type grooves is less than the thickness of top layer Ge of the GeOI substrate; filling the P-type grooves and the N-type grooves, and adopting ion implantation to form a P-type active region and an N-type active region in the top layer Ge of the GeOI substrate; and forming a lead wire on the GeOI substrate, so as to complete the preparation of the heterogeneous Ge-based pin diodes. The preparation method provided by the invention can prepare and provide high-performance Ge-based plasma pin diodes suitable for forming a solid-state plasma antenna by utilizing the deep trench isolation technology and the ion implantation process.

Description

Technical field [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a method for preparing a heterogeneous Ge-based pin diode string in a reconfigurable multilayer holographic antenna. Background technique [0002] A wireless communication system that can dynamically adapt to changing environmental propagation characteristics will be the key to next-generation communication applications. The antenna is an extremely important component in any wireless device because it transmits and receives radio waves. The performance of the antenna represents the performance of most wireless devices, so the performance of the antenna is a key part of the system. [0003] A reconfigurable antenna is an antenna that changes its radiation, polarization and frequency characteristics by changing its physical structure. Among them, frequency reconfigurable antennas have greatly expanded the scope of application because they can be applied to mult...

AI Technical Summary

Problems solved by technology

[0005] At present, the materials used in pin diodes used in reconfigurable antennas at home and abroad are all bulk silicon materials. This material has the problem of low carrier mobility in the intrinsic region, which affects the carrier concentration in the intrinsic region of the pin diode, which in turn affects Its solid-state plasma concentration; and the P region and N region of this structure are mostly formed by implantation process, which requires a large implant dose and energy, high requirements on equipment, and is not compatible with existing processes; and the use of diffusion process, although The junction depth is deep, but at the same time, the area of ​​the P region and the N region is relatively large, the integration degree is low, and the doping concentration is uneven, which affects the electrical performance of the pin diode, resulting in poor controllability of the solid-state plasma concentration and distribution

Images