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Preparation method of heterogeneous Ge-based PIN diode string in reconfigurable annular antenna

A PIN diode and loop antenna technology, which is applied in the field of preparation of heterogeneous Ge-based PIN diode strings, can solve the problems of large injection dose and energy, incompatibility, and influence on solid-state plasma concentration, so as to improve the breakdown voltage and suppress the influence Effect

Inactive Publication Date: 2017-02-22
XIAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, there is a type of frequency reconfigurable antenna on the market. The material used for the important component PIN diode is bulk silicon material. This material has the problem of low carrier mobility in the intrinsic region, which affects the current carrying capacity of the intrinsic region of the PIN diode. sub-concentration, thereby affecting its solid-state plasma concentration; and the P region and N region of the structure are mostly formed by implantation process, which requires a large implant dose and energy, requires high equipment, and is not compatible with existing processes; and Diffusion technology is used, although the junction depth is deep, but at the same time, the area of ​​P region and N region is relatively large, the integration degree is low, and the doping concentration is uneven, which affects the electrical performance of PIN diodes, resulting in poor controllability of solid-state plasma concentration and distribution.

Method used

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  • Preparation method of heterogeneous Ge-based PIN diode string in reconfigurable annular antenna
  • Preparation method of heterogeneous Ge-based PIN diode string in reconfigurable annular antenna
  • Preparation method of heterogeneous Ge-based PIN diode string in reconfigurable annular antenna

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Embodiment 1

[0062] An embodiment of the present invention provides a method for preparing a heterogeneous Ge-based PIN diode string in a reconfigurable loop antenna. The heterogeneous Ge-based plasmonic PIN diodes are used to manufacture a reconfigurable loop antenna. Please refer to figure 1 , figure 1 It is a structural schematic diagram of a reconfigurable loop antenna according to an embodiment of the present invention; the loop antenna includes: a semiconductor substrate (1); a dielectric plate (2); a first plasma PIN diode ring (3), a second plasma PIN The diode ring (4), the first DC bias line (5) and the second DC bias line (6) are all arranged on the semiconductor substrate (1); the coupled feed source (7) is arranged on On the medium plate (2);

[0063] Please refer to figure 2 , figure 2 It is a flowchart of a method for preparing a heterogeneous Ge-based plasmonic PIN diode according to an embodiment of the present invention. The preparation method comprises steps:

[...

Embodiment 2

[0102] See Figure 7a-Figure 7r , Figure 7a-Figure 7r It is a schematic diagram of a preparation method of a heterogeneous Ge-based plasma pin diode according to an embodiment of the present invention. On the basis of the first embodiment above, to prepare a GeOI-based solid-state plasma with a channel length of 22 nm (the length of the solid-state plasma region is 100 microns) Take the PIN diode as an example to describe in detail, the specific steps are as follows:

[0103] Step 1, substrate material preparation steps:

[0104] (1a) if Figure 7a As shown, the (100) crystal orientation is selected, the doping type is p-type, the doping concentration is a GeOI substrate 101 of 1014 cm-3, and the thickness of the top layer Ge is 50 μm;

[0105] (1b) if Figure 7b As shown, a first layer of SiO with a thickness of 40nm is deposited on a GeOI substrate by chemical vapor deposition (Chemical vapor deposition, CVD for short). 2 layer 201;

[0106] (1c) Deposit a layer of fi...

Embodiment 3

[0133] Please refer to image 3 , image 3 It is a schematic diagram of a device structure of a heterogeneous Ge-based plasmonic PIN diode according to an embodiment of the present invention. The heterogeneous Ge-based plasmonic PIN diode employs the above-mentioned as figure 1 The preparation method shown is made, specifically, the Ge-based plasma PIN diode is prepared and formed on the GeOI substrate 301, and the P region 304, the N region 305 of the pin diode and the lateral direction are located between the P region 304 and the N region 305 The I regions in between are located in the top layer Ge302 of the GeOI substrate. Wherein, the PIN diode can be isolated by STI deep trenches, that is, an isolation trench 303 is provided outside the P region 304 and the N region 305, and the depth of the isolation trench 303 is greater than or equal to the thickness of the top layer Ge302.

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Abstract

The invention relates to a preparation method of a heterogeneous Ge-based PIN diode string in a reconfigurable annular antenna. The preparation method includes: selecting a GeOI substrate of a certain crystal direction, and arranging an isolating area in the GeOI substrate; etching the GeOI substrate to form a P-type groove and an N-type groove, wherein depth of the P-type groove and the N-type groove is smaller than thickness of Ge on the top layer of the GeOI substrate; oxidizing the P-type groove and the N-type groove to form oxidized layers on the inner walls of the P-type groove and the N-type groove; utilizing a wet etching process to etch the oxidized layers on the inner walls of the P-type groove and the N-type groove to flatten the inner walls of the P-type groove and the N-type groove; filling the P-type groove and the N-type groove; forming a lead on the GeOI substrate to complete preparation of the Ge-based PIN diode. By utilizing deep groove isolating technology and ion implantation technology, the high-performance heterogeneous Ge-based PIN diode string suitable for forming solid-state plasma antennas can be prepared and provided.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a method for preparing a heterogeneous Ge-based PIN diode string in a reconfigurable loop antenna. Background technique [0002] Reconfigurable antennas with adjustable performance have the characteristics of miniaturization and multi-function, and it has received more and more attention in today's wireless communication systems. By dynamically changing the physical structure or size of the antenna, the current distribution on its surface can be changed, so as to obtain the reconfigurability of the antenna's operating frequency, radiation direction and polarization and other characteristic parameters, thereby realizing the operating frequency and radiation of multiple antennas. The reconfigurability of characteristic parameters such as direction and polarization can realize the functions of multiple antennas, which is equivalent to multiple antennas sha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/329H01L29/868
CPCH01L29/66136H01L29/868
Inventor 李妤晨付周兴
Owner XIAN UNIV OF SCI & TECH
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