Preparation method and device of sige-si-sige heteroge-based solid-state plasma pin diode

Abstract

The invention relates to a preparation method and a device of a SiGe-Si-SiGe heterogeneous Ge-based solid-state plasma PiN diode. The preparation method comprises the steps of (a), selecting a GeOI substrate; (b), setting an isolation region in the GeOI substrate; (c), forming a P type trench and an N type trench in the GeOI substrate through a photoetching process; (d), adopting an ion implantation process to form a P type active region and an N type active region in top layer Ge of the GeOI substrate; and (e) performing lead hole photoetching and passivating treatment to complete the preparation of the heterogeneous Ge-based solid-state plasma PiN diode. According to the embodiments, the high-performance Ge-based solid-state plasma PiN diode, which is applicable to formation of a solid-state plasma antenna, can be prepared and provided through a deep trench isolation technology and the ion implantation process.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a method for preparing a SiGe-Si-SiGe heterogeneous Ge-based solid-state plasma PiN diode and a device thereof. Background technique [0002] At present, the materials used in PiN diodes used in plasma reconfigurable antennas at home and abroad are all bulk silicon materials. This material has the problem of low carrier mobility in the intrinsic region, which affects the carrier concentration in the intrinsic region of the PiN diode, and thus Affect its solid-state plasma concentration; and the P region and N region of this structure are mostly formed by implantation process, which requires a large implant dose and energy, high requirements on equipment, and is incompatible with existing processes; and the diffusion process, Although the junction depth is deep, the areas of the P region and the N region are large, the integration degree is low, and the ...

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Problems solved by technology

[0002] At present, the materials used in PiN diodes used in plasma reconfigurable antennas at home and abroad are all bulk silicon materials. This material has the problem of low carrier mobility in the intrinsic region, which affects the carrier concentration in the intrinsic region of the PiN diode, and thus Affect its solid-state plasma concentration; and the P region and N region of this structure are mostly formed by implantation process, which requires a large implant dose and energy, high requirements on equipment, and is incompatible with existing processes; and the diffusion process, Although the junction depth is deep, but at the same time, the area of ​​the P region and the N region is large, the integration degree is low, and the doping concentration is uneven, which affects the electrical performance of the PiN diode, resulting in poor controllability of the solid-state plasma concentration and distribution.

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