Ge-based solid-state plasma PiN diode and preparation method therefor
A plasma and diode technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of large injection dose and energy, uneven doping concentration, affecting the carrier concentration of pin diodes, etc. Improved breakdown voltage and enhanced controllability
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Embodiment 1
[0057] See figure 1 , figure 1 It is a flowchart of a method for manufacturing a Ge-based solid-state plasma PiN diode according to an embodiment of the present invention. The method is suitable for preparing a GeOI-based lateral solid-state plasma PiN diode, and the GeOI lateral solid-state plasma PiN diode is mainly used for making a solid-state plasma PiN diode. antenna. The method comprises the steps of:
[0058] (a) selecting a GeOI substrate with a certain crystal orientation, and setting an isolation region in the GeOI substrate;
[0059] (b) etching the GeOI substrate to form a P-type trench and an N-type trench, and the depth of the P-type trench and the N-type trench is less than the thickness of the top layer Ge of the GeOI substrate;
[0060] (c) forming a first P-type active region and a first N-type active region by ion implantation in the P-type trench and the N-type trench;
[0061] (d) filling the P-type trench and the N-type trench, and using ion implanta...
Embodiment 2
[0101] See Figure 2a-Figure 2s , Figure 2a-Figure 2s It is a schematic diagram of a method for preparing a Ge-based solid-state plasma PiN diode according to an embodiment of the present invention. On the basis of the first embodiment above, to prepare a GeOI-based solid-state plasma with a channel length of 22 nm (the length of the solid-state plasma region is 100 microns) Taking a bulk PiN diode as an example to describe in detail, the specific steps are as follows:
[0102] Step 1, substrate material preparation steps:
[0103] (1a) if Figure 2a As shown, the (100) crystal orientation is selected, the doping type is p-type, and the doping concentration is 10 14 cm -3 A GeOI substrate sheet 101, the thickness of the top layer Ge is 50 μm;
[0104] (1b) if Figure 2b As shown, a first layer of SiO with a thickness of 40nm is deposited on a GeOI substrate by chemical vapor deposition (Chemical vapor deposition, CVD for short). 2 Layer 201; adopt the method of chemica...
Embodiment 3
[0133] Please refer to image 3 , image 3 It is a schematic diagram of a device structure of a Ge-based solid-state plasma PiN diode according to an embodiment of the present invention. The Ge-based solid-state plasma PiN diode adopts the above-mentioned figure 1 The preparation method shown is made, specifically, the Ge-based solid-state plasma PiN diode is prepared and formed on the GeOI substrate 301, and the P region 305, the N region 306 of the pin diode and the laterally located P region 305 and the N region The I regions between 306 are located in the top layer Ge302 of the GeOI substrate. Wherein, the pin diode can be isolated by STI deep trenches, that is, an isolation trench 303 is provided outside the P region 305 and the N region 306, and the depth of the isolation trench 303 is greater than or equal to the thickness of the top layer Ge302. In addition, the P region 305 and the N region 306 may respectively include a thin-layer P-type active region 307 and a th...
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