Preparation method for Ge-based heterogeneous solid-state plasma diode applied to annular antenna
A loop antenna and plasma technology, applied in the manufacture of semiconductor/solid-state devices, antennas, semiconductor devices, etc., can solve the problems of large injection dose and energy, low integration, high equipment requirements, etc., to suppress the impact, improve the breakdown voltage, good controllability
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Embodiment 1
[0062] An embodiment of the present invention provides a method for preparing a Ge-based heterogeneous solid-state plasma diode applied to a loop antenna, and the Ge-based heterogeneous solid-state plasma diode is used to manufacture a reconfigurable loop antenna. Please refer to figure 1 , figure 1 It is a structural schematic diagram of a reconfigurable loop antenna according to an embodiment of the present invention; the loop antenna includes: a semiconductor substrate (1); a dielectric plate (2); a first solid-state plasma diode ring (3), a second solid-state plasma The diode ring (4), the first DC bias line (5) and the second DC bias line (6) are all arranged on the semiconductor substrate (1); the coupled feed source (7) is arranged on On the medium plate (2);
[0063] Please refer to figure 2 , figure 2 It is a flowchart of a method for preparing a Ge-based heterogeneous solid-state plasma diode according to an embodiment of the present invention. The preparation...
Embodiment 2
[0105] See Figure 7a-Figure 7r , Figure 7a-Figure 7r It is a schematic diagram of a method for preparing a Ge-based heterogeneous solid-state plasma diode according to an embodiment of the present invention. On the basis of the above-mentioned embodiment 1, to prepare a GeOI-based solid-state solid-state diode with a channel length of 22 nm (the length of the solid-state plasma region is 100 microns) The plasma diode is taken as an example for detailed description, and the specific steps are as follows:
[0106] Step 1, substrate material preparation steps:
[0107] (1a) if Figure 7a As shown, the (100) crystal orientation is selected, the doping type is p-type, and the doping concentration is 10 14 cm -3 A GeOI substrate sheet 101, the thickness of the top layer Ge is 50 μm;
[0108] (1b) if Figure 7b As shown, a first layer of SiO with a thickness of 40nm is deposited on a GeOI substrate by chemical vapor deposition (Chemical vapor deposition, CVD for short). 2 la...
Embodiment 3
[0135] Please refer to Figure 8 , Figure 8It is a schematic diagram of a device structure of a Ge-based heterogeneous solid-state plasma diode according to an embodiment of the present invention. The Ge-based heterogeneous solid-state plasmonic diode adopts the above-mentioned figure 1 The preparation method shown is made, specifically, the Ge-based solid-state plasma diode is prepared and formed on the GeOI substrate 301, and the P region 304, the N region 305 of the solid-state plasma diode and the laterally located P region 304 and the N region 305 The I regions in between are located in the top layer Ge302 of the GeOI substrate. Wherein, the solid-state plasma diode can be isolated by STI deep trenches, that is, an isolation trench 303 is provided outside the P region 304 and the N region 305, and the depth of the isolation trench 303 is greater than or equal to the thickness of the top layer Ge302.
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