Preparation method for tin-doped indium sulfide flower-like nano material and application of nano material in photocatalytic reduction

A nanomaterial, indium sulfide technology, applied in physical/chemical process catalysts, nanotechnology for materials and surface science, tin compounds, etc., can solve the problem of small accessible surface area, limited application and promotion, and poor photocatalytic reduction performance. and other problems, to achieve the effect of low equipment requirements, good repeatability, high stability and catalytic reduction activity

Inactive Publication Date: 2019-01-25
SOUTH CHINA UNIV OF TECH
View PDF6 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, a single In 2 S 3 The accessible surface area (i.e., the active sites) is very small, and the photogenerated electrons and holes are easily recombined, resulting in unsatisfactory photocatalytic reduction performance, which limits its application in practice.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method for tin-doped indium sulfide flower-like nano material and application of nano material in photocatalytic reduction
  • Preparation method for tin-doped indium sulfide flower-like nano material and application of nano material in photocatalytic reduction
  • Preparation method for tin-doped indium sulfide flower-like nano material and application of nano material in photocatalytic reduction

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Preparation of single In by hydrothermal method 2 S 3 . 4.8 mmol InCl 3 4H 2 O and 12 mmol thioacetamide were dissolved in 80 mL of absolute ethanol, and stirred at room temperature until completely dissolved. The solution was transferred to a 100mL polytetrafluoroethylene autoclave, and placed in an oven at 160°C for 12 hours. Cool naturally to room temperature, collect the yellow sediment, centrifuge and wash several times with distilled water and anhydrous ethanol, and then dry under vacuum at 80°C for 12 hours to obtain In 2 S 3 Photocatalyst samples. The X-ray diffraction pattern of the obtained sample is shown in the figure, and the result shows that the obtained product is β-In 2 S 3 , whose diffraction peaks are consistent with JCPDS No. 25-0309 card.

Embodiment 2

[0028] Synthesis of Sn-doped In by hydrothermal method 2 S 3 catalyst of light. 4.8 mmol InCl 3 4H 2 O and 0.5 mmol SnCl 4 ·5H 2 O was dissolved in 80 mL of absolute ethanol, and then 12 mmol of thioacetamide was added, and stirred at room temperature until completely dissolved. The solution was transferred to a 100mL polytetrafluoroethylene autoclave, and placed in an oven at 160°C for 12 hours. Naturally cool to room temperature, collect the yellow sediment, centrifuge and wash several times with distilled water and anhydrous ethanol, and then dry at 80°C under vacuum for 12 hours to obtain Sn 0.5 -In 2 S 3 Photocatalyst samples.

Embodiment 3

[0030] Synthesis of Sn-doped In by hydrothermal method 2 S 3 catalyst of light. 4.8 mmol InCl 3 4H 2 O and 1 mmol SnCl 4 ·5H 2 O was dissolved in 80 mL of absolute ethanol, and then 12 mmol of thioacetamide was added, and stirred at room temperature until completely dissolved. The solution was transferred to a 100mL polytetrafluoroethylene autoclave, and placed in an oven at 160°C for 12h. Naturally cool to room temperature, collect the yellow sediment, centrifuge and wash several times with distilled water and anhydrous ethanol, and then dry at 80°C under vacuum for 12 hours to obtain Sn-In 2 S 3 Photocatalyst samples. The X-ray diffraction pattern of the obtained sample is shown in the figure, and the result shows that the obtained product is β-In 2 S 3 , and its diffraction peaks are consistent with the JCPDS No. 25-0309 card; the scanning electron microscope image of the obtained sample shows that the product prepared by this process is a nano-curd, and the surfa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a preparation method for a tin-doped indium sulfide flower-like nano material and application of the nano material in photocatalytic reduction. The method comprises the following steps that absolute ethyl alcohol serves as a solvent, indium(III) chloride tetrahydrate, tin(IV) chloride pentahydrate and thioacetamide are sequentially added, uniform stirring is carried out, then the mixture is put into a polytetrafluoroethylene high-pressure reaction kettle, reaction is carried out for 8-20 hours at the temperature of 120-180 DEG C, and natural cooling is carried out to reach room temperature; and a product is treated so as to obtain a Sn-In2S3 photocatalytic material. According to the preparation method for the tin-doped indium sulfide flower-like nano material and the application of the nano material in photocatalytic reduction, the photocatalytic material has relatively large specific surface area and a proper pore structure, so that surface active sites are increased, the absorption capacity of visible light can be enhanced after tin is doped, so that compounding of photo-induced electrons and holes can be effectively inhibited, and more excellent photocatalytic performance can be achieved; and the Sn-In2S3 photocatalytic material can reduce uranium-containing wastewater, 95% or more of target pollutants can be reduced within 40 min, and excellent photocatalytic activity is achieved.

Description

technical field [0001] The invention relates to the technical field of water treatment, in particular to a tin-doped indium sulfide (Sn-In 2 S 3 ) preparation method of flower spherical nanomaterials and its application in photocatalytic reduction. Background technique [0002] With the development of the global industrialization process, the problem of environmental pollution is becoming more and more serious, especially the nuclear related technology is constantly improving, and the nuclear industry and nuclear power plants have developed rapidly. However, uranium mines, uranium smelting plants, geological exploration and radiological medicine generally produce radioactive uranium-containing wastewater during the process of purification or use. Radioactive uranium nuclides can enter the human body through various channels. When the accumulation of uranium exceeds a certain level, its internal exposure will cause damage to human tissues and organs and cause pathological c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/04B01J35/02B01J35/10C01G15/00C01G19/00G21F9/12B82Y30/00
CPCB01J27/04B01J35/004B01J35/02B01J35/1004B82Y30/00C01G15/00C01G19/00C01P2002/72C01P2002/85C01P2004/03C01P2004/80G21F9/12
Inventor 杨志泉冯津娜
Owner SOUTH CHINA UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap