Method for preparing W-doped Al2O3 high-resistance membrane through atomic layer deposition

Abstract

The invention relates to a method for preparing an W-doped Al2O3 high-resistance membrane through atomic layer deposition and aims at solving the problems that in the prior art,the thickness and the doping ratio of the membrane cannot be accurately controlled, and particularly defects exist when the accuracy of controlling the thickness of the membrane reaches an atom level and large-area uniformgrowth is realized at the same time. The method comprises the following steps of (1) putting a matrix into a deposition chamber; (2) vacuumizing the deposition chamber, heating the matrix; (3) performing Al2O3 deposition circulation for 2-5 times, wherein single Al2O3 deposition comprises the following steps of (3.1) introducing a precursor Al source into the deposition chamber, and purging the deposition chamber with the Al source at deposition chamber exposure set time; (3.2) introducing a precursor oxygen source to obtain a single layer Al2O3; and (3.3 ) purging the deposition chamber; (4)performing W deposition for 1-2 times, wherein the step of performing W deposition for 1-2 times comprises the following steps of (4.1) introducing a precursor W source into the deposition chamber, and purging the deposition chamber; (4.2) introducing a reducer to obtain a single-layer W metal element; and (4.3) purging the deposition chamber; and (5) sequentially conducting the step (3) and the step (4) repeatedly for many times to obtain the W-doped Al2O3 high-resistance membrane.

Description

technical field [0001] The invention relates to a method for preparing a high-resistance thin film in the field of optoelectronic materials, in particular to a method for preparing W-doped Al by atomic layer deposition 2 O 3 High resistance film method. Background technique [0002] Since the 1980s, thin-film technology and thin-film materials have developed rapidly, and have achieved fruitful results in both academic and engineering applications, and have become one of the most active research fields in material science today. For a long time, the research hotspots of conductive thin films have focused on low-resistance thin films, especially the AZO thin films represented by Al-doped ZnO (aluminum-doped zinc oxide). There are few reports on the research of high-resistance thin films. Although by adjusting the Zn / Al ratio, the AZO film can also be prepared into a high-resistance film, but this AZO film has poor stability in a high-temperature working environment or after...

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Problems solved by technology

[0004] The purpose of the present invention is to solve the deficiencies in the existing film preparation methods, and the inability to accurately control the film thickness and doping ratio, especially in the control of the film thickness to the atomic level and the simultaneous realization of large-area uniform growth. problem, provides an atomic layer deposition technique for preparing W-doped Al 2 o 3 The method of high-resistance film, the prepared film has strong adhesion, smooth surface, uniform thickness, and resistivity as high as 10 5 -10 11 Ω·cm, and good thermal stability

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