Manufacturing method for silicon single crystal

Abstract

Disclosed is a manufacturing method for a silicon single crystal, in which the silicon single crystal is grown by an FZ method for controlling the resistivity while blowing a dopant gas into a moltenband region. The method comprises the steps: (S1) acquiring actual data for growing the silicon single crystal by means of a prescribed growing device; step (S2), based on the cultivation actual data,calculating the relationship between the actual value of the resistivity of the silicon single crystal and the doping gas absorption rate of the silicon single crystal; (S3) calculating the amount ofdoped gas supplied on the basis of the relationship between the actual value of the resistivity and the absorption rate of the doped gas and the target value of the resistivity of the silicon singlecrystal manufactured using the same cultivation device; (S4) controlling the resistivity of the cultured silicon single crystal while blowing the dopant gas by using the calculated dopant gas supply amount.

Description

technical field [0001] The present invention relates to a method for manufacturing silicon single crystals. Background technique [0002] The FZ (Floating Zone, floating zone) method melts polycrystalline raw materials with high resistivity, and blows phosphorus (PH 3 ), boron (B 2 h 6 ) and other doping gases to control the resistivity, thereby growing silicon single crystals. In order to control the resistivity of a silicon single crystal, it is necessary to perform growth control while taking various conditions of the thermal field into consideration. [0003] Therefore, Document 1 (Japanese Unexamined Patent Publication No. 2015-101521 ) discloses a technique of measuring the neck diameter and the melt diameter during the growth of a silicon single crystal in a method for producing a silicon single crystal by the FZ method. , region length, crystal temperature, upper axis speed and other parameters that affect the resistivity, and cultivate silicon single crystal tec...

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Problems solved by technology

[0004] However, in the technique described in the aforementioned Document 1, it is necessary to measure various parameters during the growth of the silicon single crystal, analyze the measurement results by multivariate analysis, and adjust the doping in the next growth based on the analysis results. miscellaneous agent supply

Therefore, complex processing such as measurement of various parameters and multivariate analysis is necessary, and there is a problem that the setting of cultivation conditions in the FZ method is complicated.

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