155results about How to "Rich texture effect" patented technology

The invention discloses a method for cleaning a silicon wafer linearly cut by a diamond. The method comprises the following steps of: putting the silicon wafer into an ultrasonic cleaning machine, and degumming; putting the degummed silicon wafer into pure water at the temperature of between 30 and 50 DEG C, and cleaning by using ultrasonic waves; putting the cleaned silicon wafer into a pure water tank which is filled with lactic acid at the temperature of between 60 and 80 DEG C, and cleaning to remove defective gum on the surface of the silicon wafer; putting the silicon wafer into a wafer insertion machine for wafer insertion; putting the silicon wafer into the pure water, and cleaning by using the ultrasonic waves; putting the silicon wafer into mixed solution of a silicon wafer cleaning agent, sodium hydroxide and water at the temperature of between 40 and 60 DEG C, and cleaning by using the ultrasonic waves; putting the silicon wafer into the pure water at the temperature of between 20 and 30 DEG C, and cleaning by using the ultrasonic waves; and putting the silicon wafer into a drying machine at the temperature of between 100 and 140 DEG C for drying. By the method, dirt on the surface of the silicon wafer can be effectively removed, and the requirement of the surface of the silicon wafer for a solar battery is met; and the silicon wafer linearly cut by the diamond is subjected to analogous wool making treatment, the wool making effect of a subsequent battery plate can be improved, and cleaning wastewater can reach the emission standard after being simply treated.