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Formula of composite texturing additive for preparing maize-shaped monocrystal silicon textured surface as well as use method of additive

A technology of additives and single crystal silicon wafers, which is applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems affecting the photoelectric conversion efficiency of solar cells and the effect of texturing on the surface of single crystal silicon, and achieve shortening Texturing time, improvement of photoelectric conversion efficiency, and improvement of texturing effect

Inactive Publication Date: 2020-01-03
HUNAN INSTITUTE OF SCIENCE AND TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The effect of the formula of the texturing agent on it lies in the different effects of the compound on the surface corrosion of the single crystal silicon, and the reaction intensity of the single crystal silicon wafer to various compounds also has different performance levels. Therefore, in the experiment, the texturing The formulation of the agent directly affects the texturing effect of the monocrystalline silicon surface, and ultimately affects the photoelectric conversion efficiency of the solar cell

Method used

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  • Formula of composite texturing additive for preparing maize-shaped monocrystal silicon textured surface as well as use method of additive
  • Formula of composite texturing additive for preparing maize-shaped monocrystal silicon textured surface as well as use method of additive
  • Formula of composite texturing additive for preparing maize-shaped monocrystal silicon textured surface as well as use method of additive

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] (1) Additive preparation: use 1L deionized water as solvent, add PEG400 20g, PVP-K12 5g, APG0816 15g, benzoic acid 3g, NaCl and Na 2 SiO 3Each 4g was fully stirred and dissolved; (2) Preparation of texturing solution: 38.0 mL of NaOH solution with a concentration of 30% by weight was added to 1 L of deionized water, and 18.0 mL of additives were added to obtain an alkaline texturing solution; (3) pre- Preparation of cleaning solution: add 15mL of 30% NaOH solution by weight to 1 L of deionized water, KClO 3 1.4mol, fully dissolved; (4) Preparation of mixed acid solution: prepare a mixed acid solution with a total concentration of 1.5 mol / L by mixing HF and HCl at a ratio of 1:2; After cleaning in the pre-cleaning solution for 5 minutes, wash it with deionized water, and then immerse the monocrystalline silicon wafer in the texturing solution. The temperature of the texturing solution is 80 ° C, and the texturing time is 15 minutes; Dip the wafer in deionized water fo...

Embodiment 2

[0031] (1) Additive preparation: use 1L deionized water as solvent, add PEG800 18g, PVP-K15 4g, APG0214 16g, lactic acid 4g, KCl and K 2 SiO 3 Each 3g was fully stirred and dissolved; (2) Preparation of texturing solution: 35.0 mL of NaOH solution with a concentration of 30% by weight was added to 1 L of deionized water, and 20.0 mL of additives were added to obtain an alkaline texturing solution; (3) pre- Preparation of cleaning solution: add 12mL of 30% NaOH solution by weight to 1 L of deionized water, H 2 o 2 1.0mol, fully dissolved; (4) Preparation of mixed acid solution: mix HF and H 2 SO 4 Prepare a mixed acid solution with a concentration of 1.4 mol / L according to a molar ratio of 4:3; (5) Clean the cut monocrystalline silicon wafers in a pre-cleaning solution at 65°C for 5 minutes, then wash them with deionized water, and then Immerse the monocrystalline silicon wafer in the texturing solution, the temperature of the texturing solution is 85°C, and the texturing ...

Embodiment 3

[0033] (1) Additive preparation: use 1L deionized water as solvent, add PEG600 16g, PVP-K17 6g, APG1216 18g, citric acid 7g, NaCl and Na 2 SO 4 2g and 3g were fully stirred and dissolved respectively; (2) Preparation of texturing solution: 38.0 mL of NaOH solution with a concentration of 30% by weight was added to 1 L of deionized water, and 22.0 mL of additives were added to obtain an alkaline texturing solution; ( 3) Preparation of pre-cleaning solution: add 15 mL of 30% NaOH solution by weight to 1 L of deionized water, KCr 2 o 7 1.0mol, fully dissolved; (4) Preparation of mixed acid solution: mix HF and HNO 3 Prepare a mixed acid solution with a concentration of 1.5 mol / L according to a molar ratio of 7:8; (5) Clean the cut monocrystalline silicon wafers in a pre-cleaning solution at 65°C for 5 minutes, then wash them with deionized water, and then Immerse the monocrystalline silicon wafer in the texturing solution, the temperature of the texturing solution is 82°C, a...

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Abstract

The invention relates to a nonionic surfactant-containing additive of monocrystal silicon wafer texturing liquid. The additive comprises the following components: three nonionic surfactants such as polyethylene glycol (PEG), polyvinylpyrrolidone (PVP) and alkyl polysaccharide glycoside (APG), organic acid, inorganic salt and the balance of water. The invention also discloses a texturing method ofa monocrystal silicon wafer. The texturing method of the monocrystal silicon wafer comprises the following steps: 1) preparing a texturing additive; 2) preparing texturing liquid; 3) putting the monocrystal silicon wafer into the texturing liquid prepared in the step 2) and performing texturing at the texturing liquid temperature of 70 to 90 DEG C for 8 to 16 minutes; and 4) mixing the monocrystalsilicon wafer after texturing liquid with acid, cleaning with deionized water again and drying to obtain a product. The texturing effect is excellent; after texturing the texturing surface pyramids are arranged in a maize shape and the size distribution is 0.2 to 1.5 um; and reflection on light can be effectively reduced and the photoelectric conversion efficiency of a solar battery piece can besignificantly improved.

Description

technical field [0001] The invention belongs to the technical field of surface treatment of solar cell monocrystalline silicon wafers, and in particular relates to the influence of the type and content of various nonionic surfactants, organic acids and inorganic salts on the texturing effect of monocrystalline silicon wafers. Background technique [0002] A solar cell is a special device with electronic properties that can directly convert light energy into the electrical energy we need. Solar cells have a development history of more than 160 years. The voltage-induced phenomenon was first discovered in 1839, which was first proposed by French physicist Becquerelmer by observing electrodes immersed in electrolyte. In 1946, the world's first silicon solar cell was manufactured, creating another milestone in the history of solar cell development. After 1957, artificial satellites began to use solar cells as a power source. In 1989, concentrating solar cells came out, and the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10C30B29/06
CPCC30B29/06C30B33/10
Inventor 阎建辉邓小梅卢建红张丽杨海华陈婉君宁弘宇
Owner HUNAN INSTITUTE OF SCIENCE AND TECHNOLOGY
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