Texture etching method for quasi-monocrystalline silicon wafer

A quasi-single crystal, silicon wafer technology, applied in the field of solar cells, can solve the problems of random orientation of polycrystalline silicon grains, large grain boundaries and defects, low conversion efficiency, etc., and achieve the best effect of texturing.

Inactive Publication Date: 2011-04-27
JA SOLAR +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the grain orientation in polycrystalline silicon is random, and there are a large number of grain boundaries and defects. As a base material for batteries, the quality is not as good as that of monocrystalline silicon.
On the other hand, due to the different orientations of the crystal grains in the polycrystalline silicon wafer, the alkali texturing method with good comprehensive benefits cannot be used in ...

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] The silicon wafer used in the experiment is a 156×156 P-type quasi-single crystal silicon wafer, and the (100) grain area accounts for about 2 / 3 of the entire silicon wafer area.

[0019] Acid texturing: choose HF, HNO 3 Prepare a mixed solution with water, the volume percentage of the mixed acid is 68%, HF and HNO 3 The volume ratio of the silicon wafer is 1:3, the texturing temperature is 7°C, the texturing time is adjusted so that the etching depth of the silicon wafer is 7.5-8.5 μm, and then blow-dried after cleaning.

[0020] Alkali texturing: put the above acid texturized silicon wafers into NaOH alkali solution for further alkali texturing, the weight percentage of alkali in the solution is 2%, and additives can also be added to the alkali solution to improve the texturing effect ; Heating to 80°C, adjusting the corrosion depth of alkali texturing to 6.5-7μm through time control.

[0021] The average reflectance of (100) crystal grains in the silicon wafer obta...

Embodiment 2

[0023] The silicon wafer used in the experiment is a 156×156 P-type quasi-single crystal silicon wafer, and the (100) grain area basically occupies 3 / 4 of the entire silicon wafer.

[0024] Acid texturing: choose HF, HNO 3 Prepare a mixed solution with water, the volume percentage of the mixed acid is 70%, HF and HNO 3 The volume ratio is 1:2.5, the texture temperature is 8°C, the corrosion depth is controlled by time to 5-6μm, and it is washed and dried.

[0025] Alkali texturing: put the above acid texturized silicon wafer into KOH alkali solution for further alkali texturing, the weight percentage of alkali in the solution is 2%, add additives to improve the texturing effect, heat to 80°C, The corrosion depth is 8-9 μm by time control.

[0026] In the silicon wafer obtained through the above texturing process, the reflectivity of (100) crystal grains is less than 11-13%, and the reflectivity of other crystal grains is about 23-26%. The conversion efficiency of the final ...

Embodiment 3

[0028] The silicon wafer used in the experiment is a 156×156 P-type quasi-single crystal silicon wafer. The (100) grain area basically occupies the entire silicon wafer, and the other grains have a small area (less than 1 / 5).

[0029] Acid texturing: choose HF, HNO 3 Prepare a mixed solution with water, the volume percentage of the mixed acid solution is 75%, HF and HNO 3 The volume ratio is 1:3, the texturing temperature is 8°C, the corrosion depth is controlled by time to 3-4μm, and it is washed and dried.

[0030] Alkali texturing: Put the above acid texturized silicon wafers into KOH alkali solution for further alkali texturing, the weight percentage of alkali in the solution is 2%, and add additives to achieve better texturing effect, heating To 80°C, the corrosion depth is 8-9μm through time control.

[0031] In the silicon wafer obtained through the above texturing process, the reflectivity of (100) crystal grains is less than 12%, and the reflectivity of other crysta...

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Abstract

The invention discloses a texture etching method for quasi-monocrystalline silicon wafer. In the method, quasi-monocrystalline silicon wafer with (100) crystalline grains predominantly are treated by a texture etching process of performing acid texture etching before performing alkali texture etching, and the degree of the acid texture etching and the alkali texture etching is regulated according to the rate of occupied areas of the (100) crystalline grains in the quasi-monocrystalline silicon wafer so as to achieve the optimal effect of comprehensive texture etching. The method has a simple process, and the integral texture etching effect is high.

Description

technical field [0001] The invention belongs to the field of solar cells, and in particular relates to a texturing method for a quasi-single crystal silicon wafer. Background technique [0002] Texturing is a method of preparing a silicon surface with the function of reducing reflection. In the production process of silicon solar cells, texturing is generally used to texture the surface of silicon wafers, and the light trapping effect of the surface is used to promote the absorption of sunlight. Improve the conversion efficiency of the battery. [0003] Monocrystalline silicon has the characteristics of low defects and high conversion efficiency. Especially, the wide application of alkali texturing method makes monocrystalline silicon cells more advantageous. The pyramid-shaped textured surface formed by this texturing method makes the incident light reflect multiple times. , greatly enhanced the absorption of light and improved the conversion efficiency. As early as the 1...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 黄新明钟根香王松李志辉
Owner JA SOLAR
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