Monocrystalline silicon wafer texturing agent and texturing method using texturing agent

A single crystal silicon wafer and texturing agent technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of increasing production cost, high reaction temperature, long reaction time, etc., to increase production The effect of productivity, lower reaction temperature and lower production cost

Active Publication Date: 2020-07-10
SUZHOU CRYSTAL CLEAR CHEMICAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The reaction temperature of this texturing process is high, and the reaction time is long, which increases the production cost.

Method used

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  • Monocrystalline silicon wafer texturing agent and texturing method using texturing agent
  • Monocrystalline silicon wafer texturing agent and texturing method using texturing agent
  • Monocrystalline silicon wafer texturing agent and texturing method using texturing agent

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Prepare the initiator: mix 10 parts of HF with a concentration of 49% and 1 part of the glass component, soak at room temperature for more than 24 hours, filter to remove insoluble matter, and obtain the initiator.

[0038] Preparation of the regulating agent: 51.5 parts of copper nitrate hydrate, 4 parts of 1% nitric acid and 44.5 parts of deionized water were mixed and stirred for 30 minutes, and then dissolved to obtain the regulating agent.

[0039] Preparation of the first texturing agent: In 125L deionized water, add 36.72L of 49% HF and 16.44L of 31% H 2 o 2 , 1.2L regulator and 0.8L initiator, stirred at room temperature for 30 minutes and mixed uniformly to obtain 180.16L of the first texturing agent.

[0040] Preparation of the second texturing agent: In 119L deionized water, add 26.20L of 49%HF and 18L of 31%H 2 o 2 , 6L regulating agent and 0.8L initiator, stirred at room temperature for 30 minutes and mixed uniformly to obtain 170L second texturizing age...

Embodiment 2

[0043] Prepare the initiator: mix 10 parts of HF with a concentration of 49% and 1 part of the glass component, soak at room temperature for more than 24 hours, filter to remove insoluble matter, and obtain the initiator.

[0044] Preparation of the regulating agent: 51.5 parts of copper nitrate hydrate, 4 parts of 1% nitric acid and 44.5 parts of deionized water were mixed and stirred for 30 minutes, and then dissolved to obtain the regulating agent.

[0045] Preparation of the first texturing agent: in 126L of deionized water, add 36.72L of 49% HF and 15.24L of 31% H 2 o 2 , 1.2L regulator and 0.8L initiator, stirred at room temperature for 30 minutes and mixed uniformly to obtain 179.96L of the first texturing agent.

[0046] Preparation of the second texturing agent: In 118L deionized water, add 26.20L of 49%HF and 19.2L of 31%H 2 o 2 , 6L regulator and 0.8L initiator, stirred at room temperature for 30 minutes and mixed uniformly to obtain 170.2L of the second texturin...

Embodiment 3

[0049] Prepare the initiator: mix 10 parts of HF with a concentration of 49% and 1 part of the glass component, soak at room temperature for more than 24 hours, filter to remove insoluble matter, and obtain the initiator.

[0050] Preparation of the regulating agent: 51.5 parts of copper nitrate hydrate, 4 parts of 1% nitric acid and 44.5 parts of deionized water were mixed and stirred for 30 minutes, and then dissolved to obtain the regulating agent.

[0051] Preparation of the first texturing agent: In 125L deionized water, add 36.72L of 49% HF and 16.44L of 31% H 2 o 2 , 1.2L regulator and 0.8L initiator, stirred at room temperature for 30 minutes and mixed uniformly to obtain 180.16L of the first texturing agent.

[0052] Preparation of the second texturing agent: In 118L deionized water, add 26.20L of 49%HF and 19.2L of 31%H 2 o 2 , 6L regulator and 0.8L initiator, stirred at room temperature for 30 minutes and mixed uniformly to obtain 170.2L of the second texturing a...

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Abstract

The invention discloses a monocrystalline silicon wafer texturing agent. The texturing agent comprises the following components in percentage by mass: 10%-25% of inorganic acid, 5%-15% of an oxidizingagent, 0.5%-5% of a regulating agent, 0.1%-1% of an initiator and the balance deionized water. The invention also discloses a method for texturing by using the texturing agent, which comprises the following steps: preparing a first texturing agent, putting a monocrystalline silicon wafer into the first texturing agent, and soaking at 32 DEG C for 3 minutes; preparing a second texturing agent, putting the monocrystalline silicon wafer treated by the first texturing agent into the second texturing agent, and soaking for 3 minutes at 25 DEG C; and putting the textured monocrystalline silicon wafer into a mixed solution of nitric acid and hydrofluoric acid, carrying out ultrasonic cleaning for 1 minute, then carrying out ultrasonic cleaning on the monocrystalline silicon wafer by using deionized water, and drying by using high-purity nitrogen to obtain the monocrystalline silicon wafer with a textured structure. According to the invention, the texturing process can be completed at room temperature within a short time by using the texturing agent, and an inverted pyramid textured structure better than a positive pyramid textured structure obtained by alkaline texturing is obtained.

Description

technical field [0001] The invention relates to the technical field of solar cell manufacturing, in particular to a texturing agent for monocrystalline silicon wafers and a texturing method using the texturing agent. Background technique [0002] In the process of preparing solar cells, in order to improve the performance and efficiency of solar cells, it is necessary to make a textured surface on the surface of the silicon wafer. The effective textured structure can make the incident sunlight reflect and refract multiple times on the surface of the silicon wafer, changing the incident light. The way forward in silicon. On the one hand, the optical path is extended, thereby increasing the absorption rate of infrared light by the silicon wafer; on the other hand, more photons are absorbed in the area near the p-n junction to generate photo-generated carriers, and these photo-generated carriers are more easily absorbed collection, thus increasing the collection efficiency of ...

Claims

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Application Information

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IPC IPC(8): C30B33/10C30B29/06H01L31/0236H01L31/18
CPCC30B29/06C30B33/10H01L31/02363H01L31/18Y02P70/50
Inventor 金炳生高小云刘兵
Owner SUZHOU CRYSTAL CLEAR CHEMICAL CO LTD
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