Rinsing fluid used for removing organics on surface of monocrystalline silicon piece and cleaning method

Abstract

The invention discloses a rinsing fluid used for removing organics on the surface of a monocrystalline silicon piece and a cleaning method. The rinsing liquid comprises the following compositions in parts by volume: 2.30 parts-4.5 parts of hydrogen peroxide, 0.20 parts-1.15 parts of potassium hydroxide, and 94.35 parts-97.5 parts of pure water, wherein the mass fraction of potassium hydroxide is 45% and pure water is 18 M pure water. The cleaning method comprises the following steps: (1) flushing with tap water; (2) immersing in a lactic acid solution; (3) rinsing with tap water; (4) using pure water for ultrasonic pre-cleaning; (5) using a cleaning liquid for ultrasonic cleaning; (6) using pure water for ultrasonic rinsing; (7) using the rinsing fluid for rinsing; (8) using pure water for rinsing; and (9) performing dip coating and baking. The rinsing fluid and the cleaning are capable of effectively removing organics left on the surface of the monocrystalline silicon piece, improving the clean degree of the monocrystalline silicon piece surface, effectively reducing the cleaning unqualified rate of the monocrystalline silicon piece and the adverse ratio of the monocrystalline silicon piece subjected to etching, improving the quality of the monocrystalline silicon piece and enhancing the market competiveness of the product.

Description

Technical field: [0001] The invention relates to a rinsing solution and a cleaning method, in particular to a rinsing solution and a cleaning method for removing organic matter on the surface of a single crystal silicon wafer. Background technique: [0002] With the rapid development of the photovoltaic industry, while the demand for photovoltaic devices is increasing rapidly, the requirements for the photoelectric performance of the products themselves are getting higher and higher, that is, the requirements for the photoelectric conversion efficiency of monocrystalline silicon wafers are getting higher and higher. The cleanliness of the wafer surface is the main factor affecting the photoelectric conversion efficiency of single crystal silicon wafers. [0003] After slicing, grinding, chamfering, polishing and other processes, the surface of single crystal silicon wafers has absorbed various impurities, such as particles, metal particles, silicon powder dust and organic im...

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Problems solved by technology

[0004] However, if the single crystal silicon wafer is cleaned by the existing method, there are still many organic residues on the surface of the single crystal silicon wafer after cleaning, which shows that the unqualified rate of the single crystal silicon wafer is relatively high, and the defectiveness of the single crystal silicon wafer after texturing The proportion is relatively high, which will seriously affect the light conversion efficiency of monocrystalline silicon wafers, causing unnecessary economic losses