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Cleaning and wool making technology for monocrystal silicon chip

A silicon wafer cleaning agent and a technology for silicon silicon wafers, which are applied in the field of chemical technology, can solve the problems of unfavorable deep and uniform contact of subsequent diffusion junctions, high surface state of original silicon wafers, and low conversion efficiency of cell wafers, etc. Fleece surface defect rate, good cleaning effect, effect of improving cleaning speed and durability

Inactive Publication Date: 2014-05-07
HENAN INST OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its disadvantages are: long time for texturing, large and uneven texturing pyramid, high surface state of the original silicon wafer, relatively large chemical consumption, short solution life, poor texturing repeatability, volatile amount of isopropanol, etc. It is very large, needs to be adjusted continuously, and the operation is difficult, which leads to problems such as high defect rate of texturing appearance and low conversion efficiency of cells
The existing texturing liquid and its texturing process have the following problems: (1) The amount of silicon wafer texturing thinning is large, the cell fragment rate is high, and the warpage is large
(2) The texturing effect is unstable, and the yield is difficult to control
(3) The pyramid on the silicon surface after texturing is too large and the uniformity is poor, which is not conducive to the uniformity of the diffusion junction depth in the subsequent channel and the contact between metal and silicon in the silk screen printing process

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] A kind of monocrystalline silicon wafer cleaning texturing process, concrete steps are as follows:

[0021] (1) Use self-made silicon wafer cleaning agent to pre-clean the silicon wafers. The temperature of the pre-cleaning is 70°C, the time is 60 minutes, and the ultrasonic function is turned on, and the ultrasonic power is 40W.

[0022] (2) The pre-cleaned silicon wafer enters the texturing tank; the texturing liquid is configured in the texturing tank, and the texturing liquid is added with 0.1% to 5% sodium hydroxide and 3% hydrogen according to the mass percentage of the solution. Potassium oxide, 5% isopropanol, and 0.02% self-made texturing additive; the temperature is raised to a reaction temperature of 90°C for texturing; the ultrasonic equipment is turned on during the texturing process, and the ultrasonic power is 20W.

[0023] (3) During texturing, the tank body is closed; before the tablets are cast, the stirring device is turned on for stirring; the textur...

Embodiment 2

[0028] A kind of monocrystalline silicon wafer cleaning texture process, concrete steps are as follows:

[0029] (1) Pre-clean the silicon wafers with a self-made silicon wafer cleaning agent. The temperature of the pre-cleaning is 90°C for 30 minutes, and the ultrasonic function is turned on. The ultrasonic power is 10W.

[0030] (2) The pre-cleaned silicon wafer enters the texturing tank body; the texturing solution is configured in the texturing tank body, and the texturing solution is added with 0.1% to 5% sodium hydroxide and 0.1% hydrogen according to the mass percentage of the solution. Potassium oxide, 1% isopropanol, and 5% self-made texturing additive; heat up to a reaction temperature of 70°C for texturing; turn on the ultrasonic equipment during the texturing process, and the ultrasonic power is 40W.

[0031] (3) During texturing, the tank body is closed; before the film is cast, the stirring device is turned on for stirring; the texturing reaction time is 40 minut...

Embodiment 3

[0036] A kind of monocrystalline silicon wafer cleaning texture process, concrete steps are as follows:

[0037] (1) Pre-clean the silicon wafers with a self-made silicon wafer cleaning agent. The temperature of the pre-cleaning is 80°C for 45 minutes, and the ultrasonic function is turned on. The ultrasonic power is 25W.

[0038] (2) The pre-cleaned silicon wafer enters the texturing tank; the texturing liquid is configured in the texturing tank, and the texturing liquid is added with 0.1% to 5% sodium hydroxide and 1.5% hydrogen according to the mass percentage of the solution. Potassium oxide, 3% isopropanol, and 2.5% self-made texturing additive; heat up to a reaction temperature of 80°C for texturing; turn on the ultrasonic equipment during the texturing process, and the ultrasonic power is 30W.

[0039] (3) During texturing, the tank body is closed; before the tablets are cast, the stirring device is turned on for stirring; the texturing reaction time is 25 minutes.

[...

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PUM

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Abstract

The invention relates to a cleaning and wool making technology for a monocrystal silicon chip, and belongs to the technical field of chemical engineering. The technology particularly comprises the following step: (1) adopting a self-made silicon chip cleaning agent to perform precleaning on the silicon chip; (2) putting the pre-cleaned silicon chip into a wool making trough; preparing a wool making liquid in the wool making trough, and adding 0.1 to 5% of sodium hydroxide, 0.1 to 3% of potassium hydroxide, 1 to 5% of isopropyl alcohol and 0.02 to 5% of a self-made wool making additive in percentage by weight into the wool making liquid; rising temperature until the reaction temperature is 70 DEG C to 90 DEG C to make wool; turning on ultrasonic equipment during the wool making process; (3) when the wool is prepared, closing the trough body; before the chip is cast, stirring by adopting a stirring device, wherein the wool making reaction time is 15 to 40 min. According to the invention, through the adoption of the cleaning agent and the wool making additive, the technology is controlled to be simple and stable, the energy consumption is reduced, and the capability of process control is enhanced, so that the control quality of the product in various aspects is greatly improved, the production cost in various aspects is reduced, and the comprehensive economic benefit is increased.

Description

technical field [0001] The invention relates to a single crystal silicon wafer cleaning and texturing process, which belongs to the technical field of chemical processes. Background technique [0002] A silicon wafer is a silicon material that is cut into pieces by processing. Therefore, the silicon material to the usable silicon wafer has to go through multiple processes such as cutting and cleaning. With the development of society, silicon wafers are used more and more, and the processing of silicon wafers has also received more attention. Cleaning is one of the production processes of silicon wafers, and its cleaning quality has a great influence on the performance of silicon wafers. The main purpose of cleaning is to clean away the sand particles, residual cutting abrasives, metal ions and fingerprints generated during the cutting process, so that the surface of the silicon wafer can achieve technical indicators such as no corrosion, oxidation, and no residue. Traditi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10B08B3/10B08B3/12
Inventor 赵宁安彩霞连照勋刘萍王天喜
Owner HENAN INST OF SCI & TECH
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