Cleaning and wool making technology for monocrystal silicon chip
A silicon wafer cleaning agent and a technology for silicon silicon wafers, which are applied in the field of chemical technology, can solve the problems of unfavorable deep and uniform contact of subsequent diffusion junctions, high surface state of original silicon wafers, and low conversion efficiency of cell wafers, etc. Fleece surface defect rate, good cleaning effect, effect of improving cleaning speed and durability
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Embodiment 1
[0020] A kind of monocrystalline silicon wafer cleaning texturing process, concrete steps are as follows:
[0021] (1) Use self-made silicon wafer cleaning agent to pre-clean the silicon wafers. The temperature of the pre-cleaning is 70°C, the time is 60 minutes, and the ultrasonic function is turned on, and the ultrasonic power is 40W.
[0022] (2) The pre-cleaned silicon wafer enters the texturing tank; the texturing liquid is configured in the texturing tank, and the texturing liquid is added with 0.1% to 5% sodium hydroxide and 3% hydrogen according to the mass percentage of the solution. Potassium oxide, 5% isopropanol, and 0.02% self-made texturing additive; the temperature is raised to a reaction temperature of 90°C for texturing; the ultrasonic equipment is turned on during the texturing process, and the ultrasonic power is 20W.
[0023] (3) During texturing, the tank body is closed; before the tablets are cast, the stirring device is turned on for stirring; the textur...
Embodiment 2
[0028] A kind of monocrystalline silicon wafer cleaning texture process, concrete steps are as follows:
[0029] (1) Pre-clean the silicon wafers with a self-made silicon wafer cleaning agent. The temperature of the pre-cleaning is 90°C for 30 minutes, and the ultrasonic function is turned on. The ultrasonic power is 10W.
[0030] (2) The pre-cleaned silicon wafer enters the texturing tank body; the texturing solution is configured in the texturing tank body, and the texturing solution is added with 0.1% to 5% sodium hydroxide and 0.1% hydrogen according to the mass percentage of the solution. Potassium oxide, 1% isopropanol, and 5% self-made texturing additive; heat up to a reaction temperature of 70°C for texturing; turn on the ultrasonic equipment during the texturing process, and the ultrasonic power is 40W.
[0031] (3) During texturing, the tank body is closed; before the film is cast, the stirring device is turned on for stirring; the texturing reaction time is 40 minut...
Embodiment 3
[0036] A kind of monocrystalline silicon wafer cleaning texture process, concrete steps are as follows:
[0037] (1) Pre-clean the silicon wafers with a self-made silicon wafer cleaning agent. The temperature of the pre-cleaning is 80°C for 45 minutes, and the ultrasonic function is turned on. The ultrasonic power is 25W.
[0038] (2) The pre-cleaned silicon wafer enters the texturing tank; the texturing liquid is configured in the texturing tank, and the texturing liquid is added with 0.1% to 5% sodium hydroxide and 1.5% hydrogen according to the mass percentage of the solution. Potassium oxide, 3% isopropanol, and 2.5% self-made texturing additive; heat up to a reaction temperature of 80°C for texturing; turn on the ultrasonic equipment during the texturing process, and the ultrasonic power is 30W.
[0039] (3) During texturing, the tank body is closed; before the tablets are cast, the stirring device is turned on for stirring; the texturing reaction time is 25 minutes.
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