134 results about "Tunnelling effect" patented technology

The invention discloses a composite accelerometer based on a capacitance effect and a tunnel effect. The composite accelerometer comprises a bonding substrate, a cushion liner frame body, a supporting frame body, a cantilever beam and a mass block. A tunnel point is arranged at the center of the lower surface of the mass block. The composite accelerometer based on the capacitance effect and the tunnel effect has the advantages of adopting the manner of integrating capacitance detection and tunnel effect detection and detecting a capacitor and a tunnel. Detection of a low detection threshold value, a wide range and high sensitivity of an acceleration speed is achieved. Meanwhile, accurate measurement of the acceleration speed of a known acceleration speed value circumstance is carried out. The integrated design is adopted and the composite accelerometer is reasonable in structure, high in sensitivity, simple in detection circuit, convenient to use, good in reliability and suitable for microminiaturization.

The invention provides a strained superlattice tunnel junction ultraviolet LED (light emitting diode) epitaxial structure and a production method thereof. The epitaxial structure from top to bottom comprises: an epitaxial growth substrate, an AlN buffer layer, an n-type AlGaN layer, a multiple quantum wells, an electron blocking layer, a strained superlattice, an n-type degenerate doped AlGaN layer, and an n-type Si-doped AlGaN layer. The strained superlattice comprises a p-type AlGaN layer and an AlyGa1-yN / AlxGa1-xN. An AlGaN energy band, under effects of a polarized electric field, moves as a whole along a low energy direction. A superlattice structure contacts a heavily doped n-type AlGaN to form a p-AlGaN / SSL / n *-AlGaN tunnel junction. Electrons of a p-type AlGaN valence band, under effects of an external electric field, carried out tunneling through a tunnel effect to one side of the n-type AlGaN, and a hole is formed in the p-type AlGaN. The n-AlGaN is used as the cladding material instead of the p-type AlGaN, so that the problem of the p-type ohmic contact is avoided.

A data line and an amorphous silicon pattern are formed on a substrate. The first electrode pattern is extended from the data line and overlaps an edge of the amorphous silicon pattern. The second electrode pattern is made of the same metal as the first electrode pattern and overlaps the edge of the amorphous silicon pattern at an opposite side of the first electrode pattern. Edges of the first and the second electrode patterns are sharply formed so that a tunneling effect easily occurs through the amorphous silicon pattern. An indium-tin-oxide pattern for a capacitor is formed at the end of the second electrode pattern. The capacitor is formed between the ITO pattern and a common electrode.

Bidimensional or three-dimensional, single-layer or multilayer nanostructure, whose electric conductivity B in the total structure has a highly non-linear behavior due to local tunnel effect between adjacent clusters, and it can be varied at will by varying the voltage applied to the electrodes.

The invention discloses antistatic corrugated board paint and a preparation method thereof. The antistatic corrugated board paint is characterized in that a conductive filler is positioned in a dry box and is dried to constant weight; a coupling agent is sprayed on the conductive filler, is sequentially added with film-forming resin, a mixed solvent and a dispersant and is evenly stirred to form a primary mixture; and the viscosity of the primary mixture after ball milling is regulated through a diluent for the ball milling of the primary mixture so as to obtain the antistatic corrugated board paint. The antistatic corrugated board paint has a more compact conductive structure to form a good interbedded communication structure and has a smoother conductive passage, thereby reducing the resistivity of the paint; the paint conducts through a few conduction mechanisms of a seepage theory, tunnel effect, a field emission theory and a thermodynamics theory; according to different proportioning proposals, the resistivity of the surface of the paint can be adjusted; the method has a simple and feasible process, convenient construction and lower cost, can improve production efficiency and does not generate influence on the prior performances of paperboard, such as mechanical performance and obstruction performance.

A device to place an incision into matter with a harmonious plasma cloud. A radiofrequency generator system produces pulsed or continuous electromagnetic waveform which is transmitted by an active transmitter incising electrode tip. This generated electromagnetic wave is utilized to initiate a plasma cloud with processes such as thermal ionization and a photoelectric effect which then trigger an Avalanche Effect for charged atomic particles at the surface of the active transmitter incising electrode tip. This electromagnetic wave is impedance matched, frequency matched, power matched and tuned to the plasma cloud in order to sustain and control a harmonious plasma cloud with reduced atomic particle turbulence and chaos. This harmonious plasma cloud forms a coating over the surface of the active transmitter electrode tip as well as acts to reduce the energy needed from the power amplifier of our plasma cutting device. The electromagnetic wave is also used to produce a Pinch Effect to compress, contour, shape and control the harmonious plasma cloud. The electromagnetic wave is furthermore used to trap and contain the plasma cloud without the need of a solid matter containment vessel according to the Magnetic Bottle Effect of physics and a generated centripetal electric field force that acts to pull plasma particles inward toward the activated incising electrode tip. The Tunnelling Effect of physical chemistry is utilized to focus and amplify the energy delivered to the harmonious plasma cloud while shielding matter surrounding the intended path of incision from potential electromagnetic radiation exposure. The invention is an efficient, effective, safe, clean and inexpensive device which can be used to place an incision in matter.

Bidimensional or three-dimensional, single-layer or multilayer nanostructure, whose electric conductivity ss in the total structure has a highly non-linear behavior due to local tunnel effect between adjacent clusters, and it can be varied at will by varying the voltage applied to the electrodes.

A magnetic device includes a substrate, a sensing block and a repair layer. The substrate has a registration layer and a barrier layer disposed on the registration layer. The sensing block is patterned to distribute on the barrier layer. The repair layer is disposed substantially on the barrier layer, wherein the barrier layer is configured to have a tunneling effect when a bias voltage exists between the sensing block and the registration layer.

The invention discloses a SONOS flash memory, a preparation method thereof, and an operation method thereof. The flash memory comprises a substrate, a source drain and a groove, wherein a tunneling oxide layer, a silicon nitride trap layer, a block oxide layer and a polysilicon control grid are positioned on the groove in order. The flash memory is characterized in: that the substrate is lightly doped silicon; and the source drain comprises different doped types consisting of a P+ region and an N+ region. Compared with the prior standard CMOS technologies, the flash memory has better compatibility. As common SONOS flash memories, the flash memory in the invention is provided with good maintenance characteristics. Meanwhile, the flash memory of the invention has an ideal small size and can effectively improve programming efficiency, reduce power consumption, and inhibit the tunneling effects.

A nanometer material refers to the material with at least one dimension located within the nanometer scale range, and the range is usually 1-100nm. The granularity of nanometer-level ultra-fine powder is also extremely low, and the number of atoms on the surface of the power and the number of atoms on the interface of the power can be compared with the number of atoms inside the power, so that the chemical property of the powder is very active and the interface effect and the surface effect are increased abnormally. The small size effect, the quantum size effect and the surface effect are all very obvious. Nanometer copper powder is not prone to oxidization, and in a copper catalytic system and a copper conductive system, the catalytic performance and the conductive performance can be greatly enhanced due to the performance of the copper powder in the aspect of oxidization. Due to the quantum size effect of the nanometer material and the macroscopic quantum tunneling effect of the nanometer material, when the nanometer copper powder is dispersed in a plurality of mediums, abnormal strong catalytic and conductive performances are shown, and important applications can be developed. The specific surface area of the nanometer copper powder is large, surface active centers are many, and therefore the nanometer copper powder is a good catalyst in metallurgy and petroleum chemical industries.