The invention belongs to the technical field of
semiconductor photoelectric detection, and particularly relates to a tunneling photoelectric
detector based on a Van der Waals
heterojunction and a preparation method of the tunneling photoelectric
detector. A
metal type two-dimensional material is used as a carrier
transport layer; an insulating type two-dimensional material is used as a
barrier layer and a tunneling layer; and a
semiconductor type two-dimensional material is used as a
photoelectric conversion material. The device structure sequentially comprises a substrate (1), a
metal type two-dimensional material layer (2), an insulating type two-dimensional material tunneling layer (3), a
semiconductor type two-dimensional material light
absorption layer (4) and a
metal electrode (5) from bottom to top. When the device works, the insulating type two-dimensional material plays a role of the
barrier layer in the dark, which improves the potential barrier to prevent
electron transmission, and effectively reduces the
dark current of the device; under
light irradiation, bias
voltage is applied to enable the insulating type two-dimensional material layer to generate a tunneling effect, a conduction step of
photon-generated carriers is formed, a carrier multiplication effect is generated, and the
photocurrent of the device is effectively improved. The device has the characteristicsof high response rate, high
detection rate, high
optical switch ratio, quick response and the like.