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Non-volatile memory unit

A memory unit, non-volatile technology, used in static memory, read-only memory, information storage, etc., can solve problems such as increased process manufacturing cost and incompatibility

Inactive Publication Date: 2006-08-30
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Traditional embedded EEPROM uses NMOS floating gate storage transistors, however, this requires an additional process to form a floating gate structure, which is incompatible with the commonly used standard CMOS process, which greatly increases the manufacturing cost of the process

Method used

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Embodiment Construction

[0023] figure 1 The circuit structure of the non-volatile memory unit realized by the standard CMOS process is given, and the unit can be realized by using the PMOS transistor of the standard CMOS process. PMOS transistors have better data endurance than NMOS transistors. This unit is mainly composed of a tunneling transistor Mt, a control transistor Mc and a readout transistor M1. Wherein, the tunneling transistor Mt and the control transistor Mc are connected in the form of MOS transistor capacitance, that is, the respective drain terminals, source terminals and substrate terminals of the transistors are connected together, and are respectively connected to the tunneling voltage Vt and the control voltage Vc, and The gates of Mt and Mc are connected to form the floating gate FC of the memory cell, which is equivalent to the real floating gate in the memory process; at the same time, the FC terminal is used to control the gate of the readout transistor M1, so that there is n...

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PUM

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Abstract

The invention is a nonvolatile memory cell circuit implemented by standard CMOS process, comprising tunnel transistor, control transistor and readout transistor, where the tunnel transistor and control transistor are both connected in a MOS capacitor form, and both their grids are connected to form a floating grid. And it has a bidirectional Fowler-Nordheim tunneling effect by voltage generation at two ends of the capacitor of the tunnel transistor, thus realizing charge injection and erasion, and obtains the data in the memory cell by reading out the current of the readout transistor controlled by the floating grid.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit design, and in particular relates to a non-volatile memory unit circuit which adopts standard CMOS technology to realize single-end and differential. Background technique [0002] With the rapid development of electronic technology, memory technology is also advancing by leaps and bounds. With the continuous improvement of various specialized applications, new memory technologies are emerging one after another. Programmable non-volatile memory (NVM) can be embedded in various integrated circuit technologies to permanently store data information, such as chip serial numbers, security information, product codes, processor instructions, etc. EEPROM is one of several non-volatile memories that are widely used, especially in the field of radio frequency identification tag chips. At present, non-volatile memory is gradually developing towards low cost, low power consumption, high speed and ...

Claims

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Application Information

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IPC IPC(8): G11C16/06G11C16/26G11C16/28
Inventor 闫娜王俊宇闵昊
Owner FUDAN UNIV
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