Non-volatile memory unit
A memory unit, non-volatile technology, used in static memory, read-only memory, information storage, etc., can solve problems such as increased process manufacturing cost and incompatibility
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[0023] figure 1 The circuit structure of the non-volatile memory unit realized by the standard CMOS process is given, and the unit can be realized by using the PMOS transistor of the standard CMOS process. PMOS transistors have better data endurance than NMOS transistors. This unit is mainly composed of a tunneling transistor Mt, a control transistor Mc and a readout transistor M1. Wherein, the tunneling transistor Mt and the control transistor Mc are connected in the form of MOS transistor capacitance, that is, the respective drain terminals, source terminals and substrate terminals of the transistors are connected together, and are respectively connected to the tunneling voltage Vt and the control voltage Vc, and The gates of Mt and Mc are connected to form the floating gate FC of the memory cell, which is equivalent to the real floating gate in the memory process; at the same time, the FC terminal is used to control the gate of the readout transistor M1, so that there is n...
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