Non-volatile memory unit

Abstract

The invention is a nonvolatile memory cell circuit implemented by standard CMOS process, comprising tunnel transistor, control transistor and readout transistor, where the tunnel transistor and control transistor are both connected in a MOS capacitor form, and both their grids are connected to form a floating grid. And it has a bidirectional Fowler-Nordheim tunneling effect by voltage generation at two ends of the capacitor of the tunnel transistor, thus realizing charge injection and erasion, and obtains the data in the memory cell by reading out the current of the readout transistor controlled by the floating grid.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit design, and in particular relates to a non-volatile memory unit circuit which adopts standard CMOS technology to realize single-end and differential. Background technique [0002] With the rapid development of electronic technology, memory technology is also advancing by leaps and bounds. With the continuous improvement of various specialized applications, new memory technologies are emerging one after another. Programmable non-volatile memory (NVM) can be embedded in various integrated circuit technologies to permanently store data information, such as chip serial numbers, security information, product codes, processor instructions, etc. EEPROM is one of several non-volatile memories that are widely used, especially in the field of radio frequency identification tag chips. At present, non-volatile memory is gradually developing towards low cost, low power consumption, high speed and ...

AI Technical Summary

Problems solved by technology

[0003] Traditional embedded EEPROM uses NMOS floating gate storage transistors, however, this requires an additional process to form a floating gate structure, which is incompatible with the commonly used standard CMOS process, which greatly increases the manufacturing cost of the process

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