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Solar cell taking fluorinated graphene as high-resistance layer and preparing method thereof

A technology of solar cells and fluorinated graphene, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as light transmittance limitation, and achieve the effects of convenient operation, good light transmission rate and high purity

Active Publication Date: 2015-10-21
XIAN JIAOTONG LIVERPOOL UNIV
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Problems solved by technology

However, taking the high-resistance layer as zinc oxide as an example, the effective thickness range of the zinc oxide film is 80-200nm, which is not conducive to the tunneling of electrons generated at the heterojunction formed by CdTe / CdS to reach the front electrode through zinc oxide.
In addition, its light transmittance is also limited (~81%)

Method used

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  • Solar cell taking fluorinated graphene as high-resistance layer and preparing method thereof

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Embodiment 1

[0030] like figure 1 Shown, a kind of cadmium telluride thin film solar cell with fluorinated graphene thin film as high resistance layer, solar cell bottom layer is metal thin film layer 10, is provided with back contact layer 20 on metal thin film layer 10, on the back contact layer 20 is provided with an absorbing layer 30, the absorbing layer 30 material can be cadmium telluride, the window layer 40 is set on the absorbing layer 30, the material of the window layer 40 can be cadmium sulfide, and the window layer 40 is fluorinated graphene high The uppermost layer of the resistance layer 50 is a transparent conductive film layer 60 .

[0031] The thickness of the fluorinated graphene high resistance layer 50 is 0.34-20nm.

[0032] A method for preparing a cadmium telluride thin-film solar cell, using glass evaporated with a transparent oxide film layer (for example, indium tin oxide) as a substrate, and spin-coating the prepared fluorinated graphene on the substrate...

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Abstract

The invention discloses a solar cell taking a fluorinated graphene film as a high-resistance layer. In the solar cell, the cell structure successively comprises a metal film layer as a back electrode, a back contact layer, an absorbing layer, a window layer, a fluorinated graphene high-resistance layer and a transparent conductive film layer from bottom to top. A fluorinated graphene film the thickness of which is 0.34nm to 20nm replaces a native oxide and is taken as the novel high-resistance layer, atom diffusion between different films can be reduced, the interface property is improved, a cell short circuit caused by a pinhole effect of the window layer film can be prevented, and cell efficiency is further improved. Compared with a traditional high-resistance layer, the thinner fluorinated graphene film is more conductive to a tunneling effect of electrons and transfer and collection of the electrons.

Description

technical field [0001] The invention relates to a new solar cell, in particular to a solar cell with a fluorinated graphene film as a high-resistance layer and a preparation method thereof. Background technique [0002] In recent years, graphene has attracted the attention of scientific researchers due to its unique two-dimensional nanostructure and excellent electrical and thermal properties. The functionalization of graphene produces graphene derivatives, broadening the broad application fields of graphene. Graphene derivatives include graphene oxide, hydrogenated graphene and fluorinated graphene. The new fluorinated graphene is usually prepared by hydrothermal method, physical exfoliation method or plasma method. On the surface of fluorinated graphene, fluorine atoms are combined with carbon atoms in the form of covalent bonds, which changes graphene from two-dimensional to three-dimensional structure, and also makes it complete the transformation from conductor to sem...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/073
CPCH01L31/02167H01L31/02168H01L31/073Y02E10/543Y02P70/50
Inventor 吴京锦赵策洲赵胤超
Owner XIAN JIAOTONG LIVERPOOL UNIV
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